Company received top White House medal and SI Fab of the Year.
IBM’s 300-mm, SOI-enabled Building 323 in East Fishkill, NY, was selected as the Semiconductor International 2005 Top Fab Award winner. According to the publication, “IBM has produced products at competitive cycle times, cost and defect densities, with an excellent ‘first-time-right’ track record.”
At the end of 2005, IBM also received the 2004 National Medal of Technology from the U.S. Department of Commerce and the Technology Administration. The award, which is the nation’s highest honor for leading innovators, recognized IBM for over four decades of innovation in semiconductor technology, specifically citing SOI among the advances.