FD-SOI solves challenges without complicating design and manufacturing.
Designing a successful consumer-type IC requires a balanced combination of:
Figure 1 illustrates how just a few key features intrinsic to FD-SOI translate into advantages that serve those needs. Read More
FD-SOI is making the move towards industrialization. In this issue of ASN, experts from IBM, ST, Hitachi, Leti and Soitec detail their approaches.
In planar FD-SOI (as opposed to the verticality of FinFETs), CMOS transistors are built into an ultra-thin layer of silicon over a Buried Oxide (BOx) (which can optionally be extremely thin, too). This makes them Ultra-Thin Body Devices, with unique characteristics.
Planar FD-SOI addresses the major scaling challenges beyond the 28nm node:
As a result, the unique properties of fully depleted devices – combined with the simplicity of a planar FD-SOI process and optimized wafer costs – put FD-SOI in the cost-of-ownership “sweet spot” for finished chips. Read More
It’s on SOI. Here’s Why.
Toshiba’s new Cell Regza TV is poised to redefine both high-definition (HD) TV and TV-Internet convergence. At the heart of this strategy is the SOI-based Cell processor.
It was almost a decade ago when Toshiba first teamed with IBM and Sony to create the Cell. The SOI-based solution enabled the right balance of maximal performance in a minimal power envelope. IBM puts it in servers, and Sony in the PlayStation3™. Now, Toshiba has put it at the heart of its new flagship Regza. Read More