Une interview de Carlos Mazure, CTO de SOITEC et Président du SOI Industry Consortium
Une interview de Jean-Éric Michallet, responsable du département micro-électronique du LETI
Sony’s 28nm FD-SOI GPS rolling out in the Xiaomi Amazfit smartwatch is “…a big win for Sony” and “…an even bigger win for FD-SOI’s promoters,” said Junko Yoshida of EETimes (see Sony-Inside Huami Watch: Is It Time for FD-SOI?). Then she adds:“Huami’s watch decidedly demonstrates the technology’s claim to ultra-low power consumption.”
Xiaomi is a subsidiary of Huami, which lays claim to being the second largest manufacturer of wearables in the world. So it really is a big win. What’s more, the Amazfit, says Xiaomi, is “…the world’s first smartwatch with a 28 nm GPS sensor”.
Sony has been releasing evolving details of the chip at various conferences over the last few years (including SOI Consortium forums). To get their ISSCC paper, 26.5 A 0.7V 1.5-to-2.3mW GNSS receiver with 2.5-to-3.8dB NF in 28nm FD-SOI (February 2016) from IEEE Xplore – click here.
(Image courtesy xiaomi-mi.com)
With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, “If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX with back bias you get better than 10nm FinFET processes.”
“We intend to focus all new engagements in design using 28nm FD-SOI,” Samsung Semi’s Kelvin Low told SemiEngineering’s Mark Lapedus in a recent article (read it here).
Low, who’s senior directory of the company’s foundry marketing says they’ll of course continue to support existing 28nm bulk customers, “But we think FD-SOI has enough benefits to attract new customers and designers.”
From RF-SOI pioneer Peregrine Semi comes a steady stream of new chips and design wins.
Psemi was honored with a 2015 Electronic Products “Product of the Year” award for its UltraCMOS® PE42020 True DC RF switch, the industry’s first and only RF integrated switch to operate from DC (0 Hz) to 8 GHz. (Press release here.)
Registration is open for GlobalFoundries’ technical webinar, “How to Implement an ARM Cortex-A17 Processor in 22FDX 22nm FD-SOI Technology” (click here to go to the registration page). The webinar will cover the optimal steps to successfully implement ARM® Cortex®-A Series* processors using 22FDXTM 22nm FD-SOI technology.
GF Design Enablement Fellow Dr. Joerg Winkler will address:
This webinar will take place April 26, 2016 at10:00 am Pacific Time.
BTW, GF’s already done quite a few 22FDX-related webinars and videos – click here to see the current list.
~ ~ ~
* Per ARM, “Cortex-A processors are specifically designed to execute complex functions and applications such as those required by consumer devices like smartphones and tablets. Their performance efficiency is also making them an increasingly popular choice for servers and enterprise applications where large core clusters can be combined for optimal solutions.”
GlobalFoundries recently announced availability of a new set of RF-SOI PDKs for the company’s 7SW SOI technology. GF, which has now delivered more than 20 billion RF-SOI chips for the world’s smartphones, tablets and more, notes that its 7SW SOI technology is optimized for multi-band RF switching in next-generation smartphones. It is also poised to drive innovation in IoT applications.
The new PDKs feature an interoperable co-design flow to help chip designers improve design efficiency and deliver differentiated RF-SOI front-end solutions in increasingly sophisticated mobile devices. (See press release here.) The new PDKs are designed to use with Keysight Technologies’ (formerly Agilent) Advanced Design System (ADS) EDA software, so designers can edit their designs in ADS using a single Si2 OpenAccess database without any interference.
“Our 7SW platform, with superior LNA, switch devices, and trap-rich substrates, offer improved devices reception, interference rejection, and battery life for fewer dropped calls and longer talk time,” said Peter Rabbeni, senior director of RF product marketing and business development at GlobalFoundries. “Our RF-SOI technology has gained significant industry traction for cellular front-end module applications, and the new RFIC interoperability feature will allow us to provide our 7SW customers additional design flexibility with a single PDK.”
Three of the world’s More-than-Moore and SOI technology development powerhouses have signed a comprehensive agreement for ongoing collaboration and cooperation in developing new technologies for the emerging IoT market. SITRI of Shanghai, and CEA-Leti and Minatec of Grenoble will work together to accelerate the adoption of their latest technologies and create a global innovation ecosystem for emerging IoT applications (read the press release here).
The framework agreement broadly covers all joint areas of research at SITRI and Leti, including MEMS and sensors, 5G RF front ends, ultra-low power computing and communication, RF-SOI and FD-SOI.
In fact, the trio cites SOI as a key technology in the development of both Moore’s Law and “More than Moore” solutions for the IC industry, as it brings cost, performance, power and integration advantages to the areas of ICs, RF, MEMS, and communications.
“We are confident that this collaboration will be positive for China’s electronics industry, as well as for the Grenoble region’s growing SOI technology ecosystem,” said MINATEC Director Jean-Charles Guibert.
Adds Marie-Noëlle Semeria, CEO of Leti, “Through this partnership, SITRI, MINATEC, CEA-Leti and the entire ecosystem will be able to promote and extend this ecosystem to SOI partners worldwide, and provide SOI solutions to the emerging Chinese IoT market.”
“MINATEC is a world-class international innovation center that fosters a wide range of leading-edge IoT technology research and development which is home to CEA-Leti, the renowned international research institute in microelectronics,” said Charles Yang, President of SITRI. “Through this agreement and SITRI’s established platform for ‘More than Moore’ commercialization, we can accelerate the adoption of these latest technologies and create a global innovation ecosystem for emerging IoT applications.”
Don’t forget to get your paper submitted to the top conference with a major focus on the SOI ecosystem: the IEEE S3S (SOI/3D/SubVt). The Call For Papers (CFP) deadline is April 15, 2016. As we noted for you in ASN back in December, the theme of the conference, which will take place October 10th – 13th in San Francisco, is “Energy Efficient Technology for the Internet of Things”.
As of this writing, the following keynote speakers have been confirmed:
Invited speakers include:
As always, there will be a Best Paper Award and a Best Student Paper Award. But students take note: the recipient of the Best Student Paper will also receive $1000 from Qualcomm.
Papers related to technology, devices, circuits and applications (more details here) in the following areas are requested :
For current information on the conference visit the S3S website at: http://s3sconference.org/
LinkedIn users will also want to join the conference group at IEEE SOI-3D-Subthreshold Microelectronics Technology (S3S) Unified Conference.