Category Archive Advanced Substrate Corners

ByAdele Hars

SiV SOI Symposium Part 3 – Final FD-SOI Takeaways

Why FD-SOI? What can you do with it that you couldn’t do before? That was the big question from IHS Markit’s Matthew Short that kicked off the first panel discussion at the SOI Consortium’s Silicon Valley Symposium. And there were some great answers.

VeriSilicon, Analog Bits and Silicon Catalyst were among the consortium members with stands at the SOI Symposium, Silicon Valley 2019.

Here in this final part of our coverage of the event, we’ll detail who said what in the two panel discussions, as well as the presentations by Leti, Intento Design & the SOI Consortium’s IP/EDA roundup.

If you missed the previous two installments of our coverage, you can catch up on the rest of the presentations in part 1 (NXP, Samsung & more) here and part 2 here (Synaptics, GlobalFoundries & more). Almost all of the presentations are now freely available under “events” on the consortium website – or just click here to get them.

How FD-SOI Changes What You Can Do

The presentation by Matthew Short, Sr. Director of IoT Technology at IHS Markit, was not specific to SOI, but it sure did lay out out the market opportunities.  Entitled IoT, 5G, ADAS and AI Market, it’s available on our website. Matt spent most of his career in chip design at NXP/Freescale, so he really has an engineer’s perspective on where this all is going.  At IHS Markit, they define IoT as anything with an IP address. Over the past year more than 10 billion devices were shipped, and there were more “things” than cellular handsets, so the world has really changed. He outlined the growth drivers, suggested that 5G won’t be a “wow” thing for consumers, and noted there is a lot of debate raging regarding how smart sensors should be (the Tier 1’s want smart).

He was then joined on the stage by the participants in the first panel discussion, which looked at product and application drivers. That included: NXP Fellow Rob Cosaro; Tim Dry, Director of Edge & Endpoints Marketing at Samsung Foundry; ST biz dev director Roger Forchhammer; CoreAVI biz dev VP Lee Melatti; Nokia VP Michael Reiha; and Analog Bits EVP Mahesh Tirupattur.

First Short asked why customers wanted more integrated solutions. For CoreAvi, it’s about safety, for ST in automotive it’s about security, for Analog Bits, it’s about integrating more analog, for Nokia it’s just a necessity.

Then he asked Why FD-SOI? What can you do that you couldn’t do before? For ST, which is doing MCUs for automotive, it’s about energy efficiency, speed, the density of non-volatile memory and the robustness of the technology. For NXP, it’s back biasing, low voltage and power numbers never seen before. “FD-SOI really makes a difference in the products we can bring to market,” said Cosaro. For CoreAVI, it’s the long-term power impact. And for Analog Bits, “Customers see huge benefits,” said Tirupattur, for cost sensitive applications. He has customers selling their technology in high volumes in FD-SOI.

What about edge vs. cloud?  For Nokia, it’s monolithic integration for best-in-class RF, advanced memory, biasing and voltage regulation adding a layer of intelligence. Samsung sees edge as distributed cloud, and CoreAVI sees safety in the edge, because you can’t completely rely on the cloud.

Where are the weak points in the FD-SOI ecosystem? For Samsung, more people need to use back biasing. “People need to use the knobs,” said Dry. For Analog Bits, the next step is innovation around back biasing, as many in logic don’t understand the benefits, so the ecosystem needs to promote the value proposition. ST suggests that with more products out there, customers will see the benefits. NXP did “a lot of the heavy lifting” at 28nm – now you need more people using these nodes, not just the cellphone nodes.

How will the architecture change? For NXP, it’s all about memory bandwidth. For Samsung, it’s the promise of analog and interconnect. Nokia sees the back-end and heterogeneous integration with FD-SOI and RF enablement. Analog Bits’ Tirupattur said he’s pushing his engineers for even lower power in a still smaller form factor, noting that most analog engineers had been more focused on performance than power, but now that’s changed.  For ST, it’s AI/ML throughout automotive, and FD-SOI is beneficial there.

Leti & the Connected Car

Leti’s slide 27, SOI Symposium, Silicon Valley 2019

Research giant Leti’s presentation was entitled Applications Around the Connected Car. 85% of Leti’s €315M budget comes from R&D contracts with its 350 industrial partners. Truly a driving force in FD-SOI, Leti is involved in a dizzying array of projects. For the connected car, they cover (much of it on SOI): high precision & smart sensing, embedded processing & fusion, new computing paradigms and deep learning, ultra-low power computing nodes & framework, ultra-low power connectivity for IoT, energy management and scavenging, and security. They do vision at the edge, 3D technology for smart imagers, and ways to dramatically reduce power. They’ve got a Qbits platform on FD-SOI for AI at the edge, a super low power neural network accelerator, and ULP connectivity. Check out the presentation for lots of details.

EDA/IP Overview

Slide 9 from SOI EDA/IP Overview.

SOI Consortium Executive Co-Director Jon Cheek gave a quick round-up presentation aggregating various IP and EDA offerings entitled , SOI EDA/IP Overview. It is taken from recent member presentations including Cadence, Silvaco, VeriSilicon, Synopsys and GlobalFoundries, giving you an idea of how dynamic the ecosystem has become.

Automating Analog

While the logic side of the design equation has long had robust automation tools, some consider the analog side as sort of black magic. New consortium member Intento Design aims to fix that. Here at ASN we covered their work with ST briefly a few months ago here.  At the SOI Symposium, the company’s CEO Dr. Ramy ISKANDER presented their solution in ID-XploreTM: A Disruptive EDA for Emerging FDSOI Applications. Intento, a partner in GlobalFoundries FDXcelerator program, has cognitive software for first-time right analog design. It determines the appropriate static and dynamic body biasing ranges to meet PVTB (Process/Voltage/Temperature/Body Bias), and is fully integrated into the Cadence Environment. They produced multiple correct-by-construction FD-SOI designs, and the total time spent to generate eight candidates FD-SOI designs took less than a day.  

The Tools Are in the Box

The last panel discussion, entitled Are the Tools in the Box? was moderated by the Consortium’s Jon Cheek. Participants included: VeriSilicon SVP David Jarmon; Arm PDG Marketing VP Kelvin Low; NXP’s Stefano Pietri, Technical Director of the company’s Microcontrollers Analog Design Team; Jamie Schaeffer, who’s GF’s Sr. Product Offering Manager for 22FDX and 12FDX; and Cadence Strategic Alliances Director Jonathan Smith.

2nd panel discussion, SOI Symposium, Silicon Valley 2019

Yes, the tools are in the box. Smith of Cadence said they’re providing them, and NXP’s Pietro said that they’re very well positioned in his specialty, analog. VeriSilicon has IP, and anything they don’t have in house they’ll license. 

So why be afraid of body biasing? NXP has proof by example – they see such huge cost advantages that they try to leverage it as much as possible. GF’s doing training, since each area (automotive, IoT, etc.) has different needs. Some VeriSilicon customers already see such substantial benefits from FD-SOI that they’re not bothering to do biasing. Cadence points out that the Arm POP announcement is huge, and Arm’s Low wondered if the SOI Consortium could do an IP portal?  “Our sales departments need to explain the advantages to our customers!” said NXP’s Pietro.

From the audience, NXP VP & longtime FD-SOI proponent Ron Martino (who, btw, wrote some great articles for ASN when they first got into FD-SOI – read them here), asked why designers think FD-SOI means a lot of corners? How do we convince the industry that FD-SOI simplifies design? Cadence is working with GF, responded Smith, and will have some big new at Arm’s TechCon this fall. “We need more training and marketing to show it’s not scary,” he added. For GF, the corners don’t get more complicated, and they’re working with Dolphin Integration on getting them covered early in the planning. Ease of access to IP will help, per Arm.

And in a great concluding remark, VeriSilicon’s Jarmon said, “The craft is being automated. The more we work together, the greater success of FD-SOI.”

ByAdele Hars

SOI Consortium at Key China Events in May: World Semiconductor Congress (Nanjing) and SOI Academy/FD-SOI Training (Shanghai)

Join us! In partnership with our members, the SOI Consortium is co-organizing and participating in two key SOI events coming up in China over the next few weeks. On May 18th, we’ve put together an SOI Forum at the World Semiconductor Congress (WCS) in Nanjing. And on May 23rd & 24th, we’ve teamed up with our members SIMIT, Sitri and Leti for another in our series of SOI Academies, including an FD-SOI Training Day. (The last one this past winter was a terrific success – read about that here if you missed our coverage at the time.)

QR code for WCS, Nanjing ’19

At WCS, the SOI Forum (sub-forum #8) is part of the afternoon Innovation Summit. We’ll cover the broader SOI ecosystem, including both RF-SOI and FD-SOI – from wafers to design through manufacturing. Presentations will be given by members of the SOI Consortium team, and by leaders from our membership, including Simgui, NXP, Incize, ST, IBM, Cadence and Xpeedic. Click here or scan the QR code for the full program and registration information.

Also at WCS, SOI Consortium member VeriSilicon will be participating in a morning session on AI and IoT Wireless Communications (sub-forum #4). They’ll be giving a presentation on their low-power Bluetooth design platform for GlobalFoundries 22FDX, and their CEO Wayne Dai will be moderating a round-table discussion. You can get more information on that (in Chinese only, tho) here, or follow VeriSilicon on WeChat.

QR code for SOI Academy and FD-SOI Training, Shanghaid 2019

The SOI Academy in Shanghai is an opportunity for experienced designers to gain solid expertise in FD-SOI. The event begins in the afternoon of May 23rd with a series of informative plenary talks by members of the SOI Consortium team, and by experts from our members Leti, Soitec, VeriSilicon, GlobalFoundries and NXP. The FD-SOI Training starts the next morning, on May 24th.. This is a hands-on event lead by top experts from Leti. The morning is devoted to digital design in FD-SOI, and the afternoon to RF design (including for 5G) in FD-SOI. Attendees will get a comprehensive understanding of design techniques for low-power chips leveraging the multiple benefits and flexibility of FD-SOI technology. Get more information here, or from the WeChat QR code.

We’ve got a busy schedule! To keep up to date with where we and our members will be promoting the SOI ecosystem, be sure to check our Events page regularly.

ByAdele Hars

SOI Consortium & Members at Samsung Foundry Forum (14 May, Santa Clara, CA)

For the second consecutive year the SOI Consortium will have a stand at the Networking Reception during the Samsung Foundry Forum (SFF). This important Silicon Valley event will be held on May 14, 2019 at the Santa Clara Marriott. We hope you’ll stop by to learn more about the SOI Consortium and the FD-SOI ecosystem.

There’s been a steady stream of news about Samsung’s FD-SOI offerings and support, including their highly successful 28FDS and coming very soon: 18FDS. (If you need to catch up, click here to read more.) As in the previous 3 years, Samsung will be making major announcements on their technology roadmap and application solutions. SFF is a unique opportunity to network with Korean and US based executives from Samsung Foundry as well as customers and ecosystem partners.

SOI Consortium members ARM, Synopsys, Cadence, Analog Bits, VeriSilicon and Xpeedic will also have stands, and NXP will be on the customer panel.

Seats are limited, so go to http://www.samsungfoundryforum.com/2019/ to register now.

ByAdele Hars

Part 2: Silicon Valley SOI Symposium Takeaways. FD-SOI, Smarter Edge, Goldilocks & More.

Key takeaway #2: If you need a Goldilocks process node – where you’ll get just the right balance between active power, unit cost and investment – look to FD-SOI. And, btw, the IP landscape has improved dramatically. Those were just some of the great points made by Huibert Verhoeven (shown above), GM/SVP of Synaptics’ IoT Division in his talk at the recent SOI Symposium in Silicon Valley.

BTW, if you missed part 1 of our coverage —Silicon Valley SOI Symposium a Huge Success. Key Takeaways (Part 1) Here. – you’ll want to be sure to read it, too. Almost all of the presentations are now posted on our website – click here to access them.

In this post here, we’ll cover presentations by Synaptics, GlobalFoundries, STMicroelectronics, Anokiwave and Dolphin Integration. It was a really full, day, so be sure to stay turned for Part 3 of our coverage to follow shortly: it will highlight the remaining presentations and panel discussions.

Synaptics: Smart Home at the Edge

Synaptics’ Verhoeven’s presentation Revolutionizing User Experience Through Secure Neural Network Acceleration at the Edge was about Smart Home and using SOI. Synaptics is a human interface (HMI) company that’s been doing neural networks since 1986. They’ve always been on the leading edge, from their first shipment of PC touchpads to becoming a dominant force in all things HMI today: they now ship over a billion units annually.

Synaptics slides 15 & 16 from the SOI Symposium, Silicon Valley 2019.

They currently have SOI products shipping with dedicated neural networks for voice, he said. European [privacy] regulations have played a part in driving their use of SOI, as have challenges regarding power and heat. Things are getting smarter at the edge. For example, not only do users want their coffee machine to offer the usual morning espresso, Synaptics says that the next step is for your coffee machine to recognize you’re looking extra tired and ask if you might want a double?!

For them Smart Home and multi-modal applications are the primary area of interest, as well as some automotive. Although their biggest customers have resources, others need guidance. Voice is a critical component, but now you also need video and display.

Why SOI? Their HMI vision requires low power, significant computation and dedicated neural network hardware, explained Verhoeven, so FD-SOI with RF meets their needs. “22nm SOI is a Goldilocks IoT Process Node,” he proclaimed. It gets the combination of active power, unit cost and investment just right. What’s more, he said, “The IP landscape has improved dramatically. Our choice of SOI was not an accident.” Be on the lookout for more products leveraging FD-SOI over the next six months, he concluded.

At this point on SOI, they’ve got 1 TOPS products with dedicated NPU for speakers, soundbars, Wi-Fi mesh, appliances, STBs and smart displays. These products have voice and sensor real-time (RT) AI. Next up is >4 TOPS on SOI with dedicated NPU, targeting STBs and smart displays with voice, video, imaging and RT AI.

GF: World-Changing Opps

GlobalFoundries slides 6 & 7 from the SOI Symposium 2019, Silicon Valley.

“Our clients are at the forefront of changing the world,” declared Mark Granger, VP of the Automotive Product Line at GlobalFoundries. His presentation, Capturing High Growth Market Opportunities with SOI, detailed how mobility, automotive and IoT are the growth markets for SOI. So not unsurprisingly, GF’s 22nm FD-SOI technology, 22FDX, is seeing particular traction in mobile, edge, wearables and automotive.

They’ve got twice as many tape-outs this year as they did a year ago, he noted. GF’s SOI portfolio includes 22FDX®, 45RFSOI and 8SW/7SW RF SOI for 5G/mobility; 22FDX for automotive (fully qualified for automotive Grade 2, with Grade 1 on the way); and 22FDX, 130RFSOI and 8SW/7SW RF SOI for IoT.

GF has announced a stream of good news recently:

  • with Dolphin Integration they’re delivering differentiated FD-SOI Adaptive Body Bias Solutions for 5G, IoT and automotive applications;
  • they’ve crossed the billion-dollar design win threshold with 8SW RF SOI technology;
  • they’ve collaborated with Synopsys to develop the industry’s first Automotive Grade 1 IP for their 22FDX process;
  • and they worked with Rambus on the delivery of High-Speed SerDes on 22FDX® for communications and 5G applications.

You might have heard about the Dolphin Integration news, as we covered it recently here at ASN (if not, be sure to read it here). Dolphin’s IP and methodology solutions address energy efficiency challenges. Automated transistor body biasing adjustment can achieve up to 7x energy efficiency with power supply as low as 0.4V on 22FDX designs. At the Silicon Valley event, Dolphin Integration CEO Philippe Berger provided additional information in his talk, FD-SOI IP Platform for Energy-Efficient IoT SoC.

Dolphin Integration slides 5 & 6 from the SOI Symposium 2019, Silicon Valley.

In another GF-related talk, Nitin Jain, the CTO of longtime GF RF-SOI customer Anokiwave presented Unleashing the mmWave Phase Array Using SOI for 5G & Satcom. Anokiwave is a fabless semi IC company (you’ll find a good technical discussion of mmWave phase array written by their Chief Architect here). They do active antennas (aka phased array), something the military’s done for a long time, but now Anokiwave is bringing it to new markets and applications including radar, satcom and 5G. What they’ve been able to do is planarize the active antennas. They use GF’s 45RFSOI process technology for phased array systems because of the cost, performance, scalability and system enhancements it enables. 45RFSOI, he explained, is ideal for beam-forming FEMs (including the switches, LNAs and PAs). The move to 5G/mmWave is going to require a lot of antennas, so these Anokiwave ICs are headed to high volumes, concluded Jain.

Stellar by ST

As Roger Forchhammer, Director of Business Development at STMicroelectronics pointed out in his presentation, Automotive FD-SOI Microcontrollers with Embedded PCM, ST pioneered FD-SOI (and that was almost a decade ago, btw). Then in February 2019, they announced a world first: they’d begun sampling 28nm FD-SOI microcontrollers (MCUs) with embedded non-volatile memory (eNVM) based on embedded Phase-Change Memory (ePCM) to 10 alpha customers. These MCUs target powertrain systems, advanced and secure gateways, safety/ADAS applications, and vehicle electrification.

STMicroelectronics slides 9 & 10 from the SOI Symposium 2019, Silicon Valley.

(In case you want technical details, the breakthrough ePCM eNVM was first presented at IEDM in December 2018 – you can get the presentation that accompanied the paper, Truly Innovative 28nm FDSOI Technology for Automotive Microcontroller Applications embedding 16MB Phase Change Memory, from the ST website.)

In his Silicon Valley presentation, Forchhammer said they’re now doing Stellar, a whole family of automotive products on FD-SOI. To do it, they’d taken an existing device and moved it to 28nm FD-SOI with ePCM, which they manufacture at their fab in Crolles, France. A major advantage for automotive he cites is that in software updates it’s bit-level programmable. “ST is fully behind FD-SOI,” he concluded, adding that we’re see more automotive as well as IoT products coming soon.

Well folks, that’s all for this post. We’ll finish up our coverage of the SOI Consortium’s 2019 Silicon Valley Symposium in the next ASN post (there was so much to cover!). So please stay tuned.

ByAdele Hars

PCM/MRAM Workshop by Leti and Applied Materials During 2019 IEEE Intl. Memory Workshop

Two of the big, recent breakthroughs in memory technology – eMRAM and ePCM – have gotten their start in volume manufacturing on 28nm FD-SOI. In conjunction with the 2019 IEEE International Memory Workshop, SOI Consortium members Leti and Applied Materials have teamed up to give a technical program to explore short-term and long-term memory solutions. While the workshop is not specific to SOI, given the recent foundry announcements about ePCM and eMRAM for FD-SOI, the organizers predict it will be of particular interest to those following the greater SOI ecosystem. The event takes place at the end of the Sunday IMW tutorial day, starting at 5:30pm at the Hyatt Regency in Monterey, CA. Please see this page for the program and registration information.

Here is the program:

  • Emerging Non-Volatile Memory Promises Toward New Energy-Efficient Design and Applications – Michael Tchagaspanian, VP Business Development, CEA-Leti
  • Technologies That Enable MRAM and PCRAM in Volume Manufacturing – Kevin Moraes, Vice President, Metal Deposition Products, Applied Materials
  • Technology Improvements Directions of Emerging Non-Volatile Memory for New Applications Solutions – Etienne Nowak, Head of Memory Laboratory, CEA-Leti
  • Integration Schemes and Challenges for New Memories in a New Artificial Intelligence Era –Michel Frei, Director, Advanced Product & Technology Development, Applied Materials

Jean-Eric Michallet, Head of Leti’s Microelectronics Components Department, Silicon Component Division is one of the organizers. Here is his overview:

FD-SOI is expected to be a long-lived technology. It enables planar CMOS scaling and accommodates a great deal of More-than-Moore developments where its ability for low power and great analog performance can make a difference for IoT, Automotive, Machine Learning or 5G applications. But to do this it requires a high-performance and cost-effective non-volatile embedded memory option. The incumbent Flash cell is reaching the end of its roadmap due to the difficulty of shrinking the bitcell and manufacturing, as well as the finished wafer cost increase. Back-end integrated Random Access Memory in advanced CMOS process has been explored for many years now as a competitive solution for fast-write and low-voltage non-volatile embedded memories. Foundry availability of embedded Magnetic RAM and Phase Change RAM for FDSOI 28nm platforms has been announced recently, showing that these technologies have now reached industrial maturity. CEA-Leti and Applied Materials invite you to attend a technical program to explore short-term and long-term memory solutions, from early research to industrialization.

Registration is open, free, and available to all IMW attendees, and others. However, as seating is limited and as we have already several participants pre-registered, registration is by invitation only and early registration is recommended. If you are interested, please email Jean-Eric Michallet.

The event is presented in conjunction with the 2019 IEEE International Memory Workshop, to be held on Sunday, May 12th, 2019, Hyatt Regency, Monterey CA, starting at 5:30 pm.

ByAdele Hars

Silicon Valley SOI Symposium a Huge Success. Key Takeaways (Part 1) Here.

Takeaway #1: As NXP VP Ron Martino noted in his opening keynote at the recent SOI Symposium in San Jose, FD-SOI is the technology platform for enabling edge computing, and ultra-low power is the sweet spot. 

Organized by the SOI Consortium with support from our members, the recent SOI Symposium in Silicon Valley was an enormous success. Close to 300 decision makers signed up – more than double what we saw just a couple years ago. Attendees spanned the ecosystem: from end-users to design to foundries and right up to the investment community. The presentations and panel discussions were absolutely terrific, and almost all are now freely available – click here to get them.

The focus was heavily on FD-SOI this time, but some very interesting RF-SOI talks were given as well. This was a day packed with presentations by players from across the SOI ecosystem. In this post, we’ll only cover a few. But the others will follow quickly, so watch this page. And now without further ado, let’s dive in.

NXP: In the Sweet Spot

NXP VP Ron Martino presenting at the 2019 SOI Symposium in San Jose.

NXP is designing FD-SOI into many new products, said Martino, GM of the i.MX Processor Application Product Line. There’s a new wave of products – generically you could call them IoT but in fact they’re found throughout the industry. It’s about interacting with the cloud, so edge processing is critical. His presentation, Embedded Processors for Future Applications, is now freely available for downloading from our website.

The new i.MX7ULP is a great example of ULP in the sweet spot. From a design standpoint, it leverages IP, power optimization, and what he described as “starter biasing”. That gets them the long battery life with 2D & 3D graphics they need for wearables and portables in consumer and industrial applications.

NXP slide 10, SOI Symposium, San Jose ’19 (Courtesy: NXP)

Having deepened their expertise in biasing, NXP has now moved on to “advanced biasing” for the next generation of products. For example, the i.MX RT ULP (real-time, ultra-low-power) series are “cross-over” processors, which Martino says are the “new normal”. They deal with a high number of sensor inputs. The i.MX RT 1100 MCUs, which have been qualified for automotive and industrial applications, are breaking the gigahertz performance barrier with a low-power, 28nm FD-SOI process.

Another new product leveraging advanced biasing is the i.MX RT 600. They’ve done hardware acceleration on specific functions and optimized around visionand voice integration at low cost and power.

As shown at Embedded World ’19, automotive app for NXP’x i.MX 8, which is on 28nm FD-SOI. (Courtesy: NXP)

Likewise for the i.MX 8 and 8X subsystems for automotive and industrial applications. At Embedded World, they showed it driving advanced OLED screens, cameras (for parking, for example), V2X, audio, user monitoring (like driver pupil tracking), and integration into the windshield in a heads-up system. This is the high end of the capability of 28nm FD-SOI, he said. It’s a 6 CPU core system with multiple operating systems, about which he said: “It’s the dashboard…it’s amazing.”

BTW, in another presentation, CoreAVI, which builds avionics, automotive and industrial products on NXP’s i.MX 8, addressed safety. You can get that here.

FD-SOI enables a scalable solution for real-time and general compute with the lowest leakage memory, the best dynamic and static power, Martino concluded. NXP’s leadership in body biasing is enabling edge compute, and we can expect to see more content coming soon.

In another NXP presentation later in the day, Stefano Pietri, Technical Director of the company’s Microcontrollers Analog Design Team caught a lot of people’s attention. A wave of cameras went up to capture each of his slides in Analog Techniques for Low Power, High Performance MPU in FD-SOI – but you can get the whole thing now from our website. It’s a very technical presentation, in which he details the many ways FD-SOI makes the analog team’s job easier, enabling them to get performance not available from bulk technologies. They developed a lot of in-house expertise and IP (see slide 16 for a catalog of the IP).

Samsung: Enabling LP Endpoint Products

Tim Dry, Samsung Foundry Director of Edge & Endpoint, SOI Symposium, San Jose ’19

Tim Dry, Director of Foundry Marketing: Edge and End Point presented Samsung’s FDS with MRAM: Enabling Today’s Innovative Low Power Endpoint Products. In a telling first, Samsung has made this presentation available on our website.

FD-SOI covers the wide range of requirements for intelligent IoT, he explained: from high to low processing loads; and active to dormant processing duty cycles. That includes chips that will last for ten years, and need to be able to wake up fast and kick right into high performance. These products are 50% analog, and packaging is part of the solution (especially for the RF component).

Samsung has been shipping 28nm FD-SOI (which they call 28FDS) since 2015, first in IoT/wearables, then in automotive/industrial and consumer. Yields are fully mature. In March 2019, they announced mass production of eMRAM on 28FDS. It’s a BEOL process, adding only 3 masks. It cuts chip-level power by 65% and RF power by 76% over 40nm bulk with external memory. Beyond the fact that it’s 1000x faster than eFlash, eMRAM also has other advantages that make it especially good for over-the-air updates, for example.

Samsung Foundry FD-SOI IP slide, SOI Symposium, San Jose ’19 (Source: Samsung Foundry Keynote at SOI Symposium 2019, USA)

Samsung also has RF and 5G mmWave products shipping in 28FDS. The company has a fantastic ecosystem of partners helping here, said Dry. In AI at the endpoint, they’re shipping IoT products for video surveillance cameras: some are high speed, but some are also low speed – it depends on the detection use case. And most importantly for the design ecosystem, the IP is all ready.

Next up for Samsung is 18FDS, which will ship this year with RF, then in 2020 with eMRAM. 18FDS, Dry said, is optimized for power reduction. Compared to 28FDS, it’s got 55% lower power consumption, 25% less area and 17% better performance at the same power. You’ll hear more about it as well as their design services if you’re at the Samsung Foundry Forum in May (registration info here).

ARM’s Biased Views

Kelvin Low, VP of Marketing for Arm’s Physical Design Group (PDG) gave a presentation entitled Biased Views on the Industry’s Broadest FDSOI Physical IP Solution. By way of background, Arm and Samsung Foundry recently announced a comprehensive, foundry-sponsored physical IP platform, including an eMRAM compiler for 18FDS. In case you missed it, at the time Arm Senior Product Marketing Manager Umang Doshi described the offering in an Arm Community / Developer physical IP blog, which Arm graciously agreed to share with ASN readers.

Slide 9 from Arm’s presentation, Silicon Valley SOI Symposium 2019.

At the SOI Symposium, Low emphasized to the audience that Arm now has the broadest range of FD-SOI + IP solutions. It addresses mobile, consumer, IoT, automotive and AI/ML.

There are 18FDS POP (processor optimized pipe) packages for Arm Cortex-A55, Cortex-R52 and Cortex-M33 processors. IP integrates biasing and a number of standard PVTs (corners). And since the Samsung platform is foundry-sponsored, it’s free.

Slides 6 and 11 from Arm’s presentation, Silicon Valley SOI Symposium 2019. The goal of POP IP is to enable partners to implement and tapeout Arm cores with the fastest turn-around time and best-in-class PPA while maximizing the benefits of process technology.

Arm did a test chip with eMRAM, which they’ve just gotten back. It’s functional (some details are available in slide 14 of their presentation), and the company is now preparing a demo board that they’ll be showing shortly. Watch this page!

That’s all for this post. The next post — part 2, covering presentations by Synaptics, GlobalFoundries, STMicroelectronics, Dolphin Integration and Anokiwave — is now available. Click here to read on.

ByAdele Hars

EuroSOI-ULIS (April 2019, Grenoble) + Free FD-SOI RF Technology Workshop for 5G

If you’ve never been, you should put it on your list. EuroSOI is one of those seminal conferences where you get a front-row seat to emerging technologies. It provides an interactive forum for scientists and engineers working in the field of new materials and advanced nanoscale devices. In fact, some of the leading technologies enabled by SOI that are now in the mainstream got their start at this conference. Within a few years of being presented here, the best work continues to evolve and star in the “big” conferences like IEDM and VLSI.

The list of luminaries on the steering and technical committees is a veritable who’s who of the SOI research ecosystem, including two winners of the IEEE Andrew Grove Award: Technical Chair Jean-Pierre Colinge and Sorin Cristoloveanu. So, if you want to get in on the ground floor of next-gen SOI, or just get a look at the early stages of the pipeline, this is a great place to do it.

One of the key objectives is to promote collaboration and partnership between players in academia, research and industry. As such it provides opportunities for cross-fertilization across materials, devices and design. The networking is excellent, and the gala dinner is always an affair to remember.

This year, papers in the following areas have been solicited:

  • Advanced SOI materials and wafers. Physical mechanisms and innovative SOI-like devices
  • New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.
  • Properties of ultra-thin films and buried oxides, defects, interface quality. Thin gate dielectrics: high-κ materials for switches and memory.
  • Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.
  • Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and Tunnel FET, MEMS/NEMS, Beyond-CMOS nanoelectronic devices.
  • New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain, nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.
  • CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling. Three-dimensional integration of devices and circuits, heterogeneous integration.
  • Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
  • Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
  • Emerging memory devices.

Accepted papers appear in the conference proceedings in the IEEE Xplore® digital library. The authors of the best papers are invited to submit a longer version for publication in a special issue of Solid-State Electronics. A best paper award will be attributed to the best paper by the SiNANO institute.

EuroSOI-ULIS kicks off a full week of activities in Grenoble. The day after the conference, Incize and Soitec are sponsoring an excellent, free workshop on FD-SOI RF technologies for 5G: materials, devices, circuits and performance. The’ve got a terrific line-up of presentations planned.

And towards the end of the week, there are other important satellite events. The 1st open IRDS International Roadmap for Devices and Systems European Conference (April 4th, 2019) is jointly organized by the USA, Japan and EU, and sponsored by the IEEE and SiNANO Institute. Then the week finishes out with the IEEE ICRC International Conference on Rebooting Computing (April 5th, 2019).

Grenoble the first week of April 2019 is clearly the place to be.

ByAdele Hars

4G/5G Opps for SOI Supply Chain – Workshop Presentations Now Posted

The presentations from the SOI Consortium sponsored workshop held during Semicon West are now posted and freely available on the website – click here to see the full agenda with links to the presentations. The workshop, entitled 4G/5G Connectivity: Opportunities for the SOI Supply Chain, was well-attended and generated excellent discussions.

If you don’t have time to look at all of the ppts, here are quick overviews.

Market Overview and FD SOI Opportunities, by Handel Jones, CEO, IBS.

Handel Jones is an industry veteran, China expert and longtime follower of the SOI ecosystem. High performance with low power consumption are the key requirements for the continued growth in the semiconductor industry, he said, making FD-SOI the right choice for a wide range of products. Here’s how he sees it:

(Courtesy: IBS and SOI Consortium)

He estimates the yearly TAM (total available market) for FD-SOI based products in the range of $46 billion over the next 10 years, largely driven by needs for ultra-low power and RF integration. He goes on to break out volumes by applications (including ISPs – image signal processors; and CIS – CMOS image sensors), foundry markets by feature dimension and to map out technology trends.

Mobile Radio Transformation in the Age of 5G: A Perspective on Opportunities for SOI, Peter Rabbeni, Vice President, Globalfoundries.

Peter Rabbeni is an RF expert par excellence, having overseen the shipping of over 35 billion RF-SOI products to date. In his presentation, he details how 5G NR (New Radio) sub-6GHz frequency band specifications significantly increase frequency range and channel bandwidth, and how new band support and MIMO complexity and die size per handset are driving complexity in RF FEMs. Furthermore, 5G/mmWave phased arrays are driving a paradigm shift in the approaches that can be taken, he explains, so greater integration is needed. Here’s a great slide showing where GF’s two main SOI technologies come into play:

(Courtesy: GlobalFoundries and SOI Consortium)

Empowerment of 5G with SOI-Based Technologies, Emmanuel Sabonnadière, CEO, Leti-CEA.

(Courtesy: Leti and SOI Consortium)

Working in partnership with industry leaders around the world, Leti has been the research powerhouse behind all things SOI since the early 1980s. In fact Reuters ranks them #2 in their most recent list of the World’s Most Innovative Research Institutions. This presentation reviews the key technical benefits of FD-SOI for IoT and IMT (that’s international mobile communications, btw).

Engineered Substrates – at the Foundation of 5G, Thomas Piliszczuk, Executive Vice President, Soitec.

This presentation really puts the context around engineered substrates. Here are two excellent and useful slides here that identify which engineered substrates go where in the 5G world, and the engineered substrates that Soitec provides. Check these out:

(Courtesy: Soitec and SOI Consortium)

(Courtesy: Soitec and SOI Consortium)

Ultra-thin Double Layer Metrology with High Lateral Resolution, Bernd Srocka, Vice President, Unity GmbH.

(Courtesy: Unity and SOI Consortium)

In case you’re not familiar with them, Unity provides a wide range of solutions in metrology and inspection. Both the top silicon layer and BOX layer of wafers for FD-SOI applications have draconian requirements that have required new approaches in metrology to ensure the thickness and homegeneity control of these very thin layers.

China 5G Plan and SOI Ecosystem, Jeffrey Wang, CEO, Simgui.

Shanghai-based Simgui partners with Soitec, using SmartCut™ technology for the production of RF-SOI wafers. It is doubling its capacity to reach 400K over the next year, and expanding into 300mm. China is aggressively working on 5G and plans to deploy 5G commercialization in 2020. Jeff Wang’s is a terrific presentation detailing the rollout. (BTW, in addition to the massive funding effort underway, the government created the National Silicon Industry Group (NSIG) to support the semiconductor material ecosystem in China. You’ll want to keep up with what’s going on here). Here’s the slide that summarizes the SOI ecosystem in China – the presentation then goes on to detail who does what.

(Courtesy: Simgui and SOI Consortium)

Inspection and Metrology Relevance in SOI Manufacturing, Jijen Vazhaeparambil, Vice President & General Manager, KLA-Tencor.

(Courtesy: KLA-Tencor and SOI Consortium)

K-T has played a strategic role in the SOI story going back for decades (and in fact they wrote a piece for the third edition of ASN back in 2005!), ensuring metrology innovations for things that hadn’t previously need detection and measurement. With each new set of requirements, they rose to the occasion with wafer metrology solutions that helped increase quality and decrease costs. This presentation recaps some of them.

 

ByAdele Hars

Chengdu Conference Indicates FD-SOI Will Play Major Role in China/Automotive

FD-SOI was a very important topic during the recent Mount Qingcheng China IC Ecosystem Forum. To situate things, Mount Qingcheng, with its lush hills and waterways, is located just outside of Chengdu. That of course is where GlobalFoundries is building its new fab, which will be the first in China to run FD-SOI. Chengdu is also a key city in China’s automotive electronics landscape.

(Image Courtesy: VeriSilicon)

The theme of the forum was Building a Smart Automotive Electronics Industry Chain. Over 260 decision-makers from government, academia and industry attended – and the SOI Consortium had a significant presence. The event was chaired by Wayne Dai, CEO/Founder of consortium member VeriSilicon, and tireless champion of the the FD-SOI ecosystem in China and worldwide. Morning keynotes were given by: Carlos Mazure, Soitec CTO and SOI Consortium Executive Co-Director; Mark Granger, GF’s VP of Automotive Product Line Management; and Tony King-Smith, Executive Advisor at AImotive, a GF 22FDX customer.

BTW, transcripts of all the talks are available through Gasgoo, China’s largest automotive B2B marketplace. You can click here to access them. (They’re in Chinese – but you can open them in the language of your choice using the major translation websites.)

Chengdu Officials Affirm Support for FD-SOI

Fan Yi, Deputy Mayor of Chengdu, spoke extensively of FD-SOI in his keynote on the importance of rapidly developing smart cars.

He heralded the “spectacular” new GlobalFoundries fab there. Following a meeting with the company’s top brass the day before, he affirmed GF’s confidence in their investment. There is a solid roadmap for FD-SOI, he noted, and efforts are underway to accelerate the move into production and expand education and training. He cited the benefits of FD-SOI for the entire supply chain, from design through package and test, raising the level of the entire IC industry to new heights. The government, he said, attaches great importance to this enterprise. Their thinking regarding intelligent transport in China is integrated with the overall approach to smart cities.

SOI Consortium Leads Industry Keynotes

Wayne Dai, VeriSilicon Founder and CEO (Photo courtesy VeriSilicon)

In his opening remarks, Wayne Dai emphasized the need for China to seize the advantage in the next round of development opportunities in the automotive electronics industry. This year’s Qingcheng forum, he noted, brought together key representatives from across the supply chain, from of the highest to the deepest reaches of the smart car electronics industry, and across markets, technologies, solutions, industrial ecosystem, standards and regulations.

In his talk on how FD-SOI is boosting the accelerated development of automotive electronics, Carlos Mazure presented the SOI Industry Consortium. He noted that the Consortium promotes mutual understanding and development across the ecosystem. SOI is already present throughout automotive applications, he noted. There are currently about 100mm2 of SOI per car, in such diverse areas power systems, transmissions, entertainment, in-vehicle networking and more. SOI will experience especially high growth in electrification, information/entertainment, networking, 5G, AI/edge computing and ADAS. He then went on to give some history and an extensive overview of the major trends and highlights we’ve seen over recent years. He finished by giving examples of convergence across the supply chain with IC manufacturers working with automakers to lower power, increase processor performance and advance 5G.

Carlos Mazure, Soitec CTO and SOI Consortium Executive Co-Director; Tony King-Smith, Executive Advisor at AImotive and Mark Granger, GF’s VP of Automotive Product Line Management (Photo courtesy VeriSilicon)

GF’s Mark Granger addressed the rapid development of automotive electronics. In certain areas, he said, he sees growth rates of over 20%. They are working on building the Chengdu ecosystem, especially for design, and in cooperation with the rest of the supply chain. Furthermore, he reminded the audience, when you talk about cars, travel implies that you also talk about IoT as well as things like infotainment and integrated radar ICs. In addition to cost and power efficiencies, the AEC-Q100 standard for IC reliability in automotive applications is also pushing designers to turn to FD-SOI. In the GF meeting with Chengdu government officials (referenced above in deputy mayor Fan Yi’s talk), he too confirmed their support of FD-SOI as a key technology for China. GF is currently cooperating with about 75 automotive partners, he said, and the company is looking to increase cooperation with partners in the Chengdu region.

Tony King-Smith talked about the 22FDX test chip AImotive is doing with Verisilicon and GF. In case you missed it, in June 2017 AImotive announced its AI-optimized hardware IP was available to global chip manufacturers for license. AiWare is built from the ground up for running neural networks, and the company says it is up to 20 times more power efficient than other leading AI acceleration hardware solutions on the market. In the same announcement, they revealed that VeriSilicon would be the first to integrate aiWare into a chip design,and that aiWare-based test chips would be fabricated on GF’s 22FDX. The chip is expected to debut this year.

While the afternoon agenda was not specific to FD-SOI, it did focus on the “smart cockpit” and “intelligent driving”, with talks by nine leading players in China’s automotive IC and investment communities.

~ ~ ~

Note: Many thanks to the folks at VeriSilicon, who wrote up this event for their WeChat feed, and shared photos with us here at ASN.

ByAdele Hars

Start-up SoCs on FD-SOI – Final Highlights from the Silicon Valley SOI Symposium (Part 3)

Some really innovative start-ups presented chips they’re doing on FD-SOI at the SOI Consortium’s 2018 SOI Symposium in Silicon Valley. We’ll cover those here in Part 3  of ASN’s coverage, as well as a presentation on China by wafer-maker Simgui and the final panel discussion.

BTW, if somehow you missed my coverage of the morning sessions about very cool new products and projects from NXP, Sony, Audi, Airbus and Andes Technology, be sure to click here to read it. And in the afternoon the foundry partners provided excellent insight into who’s designing chips on FD-SOI, and VLSIresearch explained why. You can read that here.

Some of the presentations are posted on the SOI Consortium Events page – but some won’t be. Either way, I’ll cover them here.

Start-ups

Ineda Systems began as an ADAS start-up, and are now working on developing low-power SoCs for use in consumer and enterprise applications. They’re using FD-SOI for their current family of chips. SVP Ramkumar Subramanian emphasized that NRE costs are really important for smaller designs. 22FDX, he said, enabled them to move from 40nm, and ramp to larger volumes.

In February, GreenWaves Technologies, a fabless semiconductor startup designing disruptive ultra-low power embedded solutions for image, sound and vibration AI processing in sensing devices, announced its GAP8 IoT application processor. GAP8 evaluation boards can now be ordered. The GAP8 agile power management architecture combined with IOT low duty cycling is a perfect fit for FDSOI processes. CEO Loic Lietar talked about how it would be used in AI applications at the very edge, wherein only the necessary data should be uploaded to the cloud.

Also in February, Dream Chips’ announced that its ADAS SoC fabbed in GlobalFoundries’ 22FDX (FD-SOI) technology was posting record power efficiency (you can read more about it in ASN’s coverage at the time here.) Dream Chips is Germany’s largest independent Engineering Service Provider. At the symposium, CEO Jens Benndor’s talked about their roadmap.

(Courtesy: eVaderis, SOI Consortium)

eVaderis CEO Jean Pascal Bost talked about how data-intensive IoT applications are enabled with FD-SOI and embedded magnetoresistive non-volatile memory (eMRAM) technology. You can get the slides from his talk here. eVaderis has eflash-like and eSRAM-like eMRAM IP that covers most MCU applications. They also have an eMRAM compiler tool and high-value-added IP for 22FDX. They foresee impressive power savings at the system level with body biasing: 25x this year and up to 45x in 2020, so that intelligence can be brought to IoT. In February they announced that they are co-developing an ultra-low power MCU reference design using GF’s eMRAM technology on the 22FDX® platform. And in March eVaderis and Mentor/Siemens announced that eVaderis proprietary Magnetic Tunnel Junction (MTJ) model would be co-optimized with AFS to speed-up simulations and generations of embedded MRAM IPs and compiler products with good accuracy.An 22FDX MCU reference design project is underway, with tape-out in July ’18.

Reduced Energy Microsystems (REM) CEO William Coven talked about realizing near-threshold computing with 22FDX and low-power memories. REM has two products on 22FDX: their Neuron Vision SoC and 64-bit RISC-V IP cores. 22FDX, he says, has been fantastic.

Simgui

Jeffrey Wang, the CEO of wafer-maker Simgui looked at why China is promoting its IC industry. (In the SOI ecosystem, Simgui is particularly known for its RF-SOI wafers, which it produces using Soitec’s Smart CutTM process.) This was more of an overview talk, not necessarily specific to the SOI ecosystem, but certainly interesting.

In terms of worldwide semiconductor sales, he said, about half end up in China. The CICF – aka the Big Fund – is currently running at about $74 billion. Having realized that mergers & acquisitions would not solve the problem, they’ve opened a second round, targeting another $160 billion.

China’s two biggest innovation success stories are Huawei (with its Kirin processor), and China Rail, which is now a global Fortune 500 company. The CAGR for the China semiconductor industry is 19%, though they need 20% to reach their goals.

IC design is a particularly successful area, posting a CAGR of 29%, with two players in China in the top 10 worldwide. Packaging and assembly/test are also very strong. Zing is working on increasing the supply of 300mm silicon wafers, while Simgui is expanding in both 200 and 300mm capex, due to “big demand”, he said.

Panel Discussion

SOI Symposium Panel Discussion: (left to right): Giorgio Cesana (Co-Director SOI Consortium), Dave Eggleston (VP GF), Tim Saxe (CTO, Quicklogic), Wayne Dai (CEO, Verisilicon), Samir Patel, (CEO Sankalp Semi), Kelvin Low (VP, ARM), Mahesh Tirupattur (EVP, Analog Bits)

The day wrapped up with an excellent panel discussion moderated by SOI Consortium Executive Co-Director Giorgio Cesana. Here are a few of the observations made by the panelists.

QuickLogic CTO Tim Saxe said that FD-SOI made their designs more compact. With FD-SOI for FPGAs, you’ve got one set of IP, and you can decide at runtime where you’re going for low power or high performance. With a lot of power domains, you see the benefits at the system level.

GF VP Dave Eggleston said they’re seeing early adopters of eMRAM, especially for wearables with RF and low power.

ARM VP Kelvin Low said people should do more than just migrate to FD-SOI. If they use back biasing, it can replace the need for big/little cores.

Body biasing makes things easier, maintained Verisilicon CEO Wayne Dai. His teams find that with body biasing, you can tape out for “typical” instead of “worst case”.

It’s not too late for FD-SOI: it’s perfect timing for the MCU market, which is still at 40nm, said Sankalp Semi CEO Samir Patel. As designers, they’re happy to focus on companies still on the older nodes.

The IP ecosystem should be more enthusiastic about FD-SOI, said Analog Bits EVP Mahesh Tirupattur. You’ve got more potential customers, and your volume runs can be bigger.

In his closing remarks, SOI Consortium Executive Co-Director Carlos Mazure reminded the audience of the day’s three take-aways:

  1. power consumption is driving even systems companies
  2. FD-SOI is penetrating fields like MCUs and SoCs where more intelligence is needed
  3. China is still a really big opportunity.