The IEEE is once again giving two of its most prestigious awards to some of the SOI and advanced substrate industry’s leading figures.
There are few greater honors in engineering than the IEEE Technical Field Awards (TFAs). And once again, people who work in advanced substrates are among the recipients of two major awards: the Andrew S. Grove award and the Daniel E. Noble Award for Emerging Technologies.
The TFAs are awarded for contributions or leadership in specific fields of interest of the IEEE. The awards consist of a bronze medal, certificate, and honorarium. They are typically announced each summer, but the actual ceremonies take place over a year later, giving the recipients time to arrange their schedules to be there.
This explains why in the summer of 2011, the 2012 award winners were announced, while the ceremonies for the 2011 winners announced in the summer of 2010 are just being held now.
The IEEE Andrew S. Grove Award honors its namesake’s lifetime achievements. It is sponsored by the IEEE Electron Devices Society, and presented to an individual for outstanding contributions to solid-state devices and technology.
As announced last year, the co-recipients of the 2011 IEEE Andrew S. Grove Award are Judy Hoyt and Eugene Fitzgerald. Professor Hoyt is with the MIT Department of Materials Science. Eugene Fitzgerald is the Merton C. Flemings-SMA Professor of Materials Science and Engineering and head of The Fitzgerald Group at MIT.
Hoyt and Fitzgerald are cited for “seminal contributions to the demonstration of Si/Ge lattice mismatch strain engineering for enhanced carrier transport properties in MOSFET devices.” Their work on “strained” silicon and its application to SOI wafers is well-known in the advanced substrates community. (Professor Fitzgerald wrote about this work in ASN5, Summer 2006.)
The 2011 Grove Award will be presented at the 2011 IEEE International Electron Devices Meeting (IEDM), which takes place in December 2011 in Washington D.C., USA.
The IEEE has also announced that 2012 Grove award will feature another SOI luminary: Jean-Pierre Colinge, Head of the Microelectronics Centre, Tyndall National Institute, Cork, Ireland. The award recognizes Dr. Colinge “For contributions to silicon-on-insulator devices and technology.” He is heralded in the industry for his seminal and continued work in multigate FETS. This paved the way for FinFET and TriGate architectures. The actual ceremony will take place at the end of 2012. Dr. Colinge and his work have been featured in many editions of ASN.
Previous Grove winners with strong ties to the advanced substrate community include Bijan Davari (IBM, 2010) and Dimitri A. Antoniadis (IBM, 2002).
The IEEE Daniel E. Noble Award for Emerging Technologies honors Dr. Daniel E. Noble, Executive Vice Chairman of the Board emeritus of Motorola. It is given for outstanding contributions to emerging technologies recognized within recent years.
The 2011 Noble Award was given to Mark L. Burgener and Ronald E. Reedy for “basic research and development of silicon on sapphire technology culminating in high-yield, commercially viable integrated circuits”. Dr. Burgener is vice president of advanced research and Dr. Reedy is the chief operating officer at Peregrine Semiconductor Corporation, San Diego, California.
In particular, the award recognizes their persistence and contributions in making silicon-on-sapphire (SOS) commercially viable for producing integrated circuits with improved speed, lower power consumption and more isolation compared to bulk silicon circuits.
The ceremony for the 2011 Noble Award took place during the IEEE/MTT-S International Microwave Symposium (MTT 2011) in June 2011 in Baltimore, MD, USA.
This summer, the IEEE also announced the winner of the 2012 Noble award: Subramanian S. Iyer, for “the development and implementation of embedded DRAM technologies.” Dr. Iyer is Distinguished Engineer & Chief Technologist, Semiconductor Research & Development Center, IBM Systems & Technology Group. He wrote about therole of SOI in “eDRAM” technology in ASN6 (December 2006). The technology is now at the heart of IBM’s latest offerings.
Of those receiving top awards at the IEDM last month, over half (!) are stars of the SOI community. Wow.
I discovered this while putting together the new listing of SOI-based papers at IEDM (don’t miss the summaries & links now posted in ASN’s most recent PaperLinks).
At the IEDM, the IEEE also awarded the title of “Fellow” to more major figures in the SOI world – see that article in ASN#15.
The IEDM is considered by many to be the most prestigious of the industry’s conferences. Here’s the “SOI list” of the most recent award winners.
To: Ghavam G. Shahidi, IBM T.J. Watson Research Center
“For contributions to and leadership in the development of silicon-on-insulator CMOS technology.”
Ghavam Shahidi has been the driving force in making SOI a manufacturable reality and an integral component of today’s microelectronics. He is currently the director of Silicon Technology at the IBM T.J. Watson Research Center.
To: Bijan Davari, IBM T.J Watson Research Center
“For contributions to high performance deep-submicron CMOS technology.”
To create faster, higher-function and low-power microprocessor chips, Bijan Davari and his research team at IBM spearheaded critical changes in chip design to take advantage of new semiconductor materials and processes, including SOI. He is currently vice president of Next Generation Computing Systems/Technology at the IBM T.J. Watson Research Center.
To: John E. Kelly III, IBM
“For leadership in the development and commercialization of silicon technology and for forging industry-university partnerships for semiconductor research and development.”
John E. Kelly III is an executive whose strategic vision has led IBM to major technology breakthroughs and partnerships that have set the pace for the semiconductor industry, including bringing SOI to the high-performance microprocessor market. He is currently senior vice president and director of research at IBM Research.
To: Tsu-Jae King Liu, University of California at Berkeley
“For contributions to nanoscale MOS transistors, memory devices, and MEMs devices.”
Tsu-Jae King Liu is a researcher who co-invented the FinFET, and who has contributed to improving microelectromechanical systems (MEMS) technology and CMOS. She is currently the Conexant Systems Distinguished Professor at the University of California, Berkeley, where she is also the College of Engineering’s Associate Dean for Research. (Click here to see the FDSOI articles she’s contributed to ASN.)
To: Perrine Batude of CEA-LETI-MINATEC for Advances in 3D CMOS Sequential Integration
The winning paper (awarded at IEDM 2010) is based on Perrine Batude’s PhD dissertation, which she completed at Léti in late 2009. Leveraging FD-SOI, the work in this paper demonstrates the possibility of obtaining regular 2D performance within a 3D sequential integration scheme. It further investigates the unique features of low temperature processes. Finally, it quantifies for the first time, the electrostatic coupling between the layers. Dr. Batude has a degree from the Ecole Nationale Supérieure de Physique de Grenoble, and specializes in the 3D integration of elementary functions. Léti hired her as soon as she finished her dissertation.
To: Mark E. Law, University of Florida
“For contributions to widely used silicon integrated circuit process modeling”
Dr. Law is Professor and College of Engineering Associate Dean of Academic Affairs for the Department of Electrical and Computer Engineering at the University of Florida. Some of his earlier work related to materials and doping was helpful to the advancement of SOI.
A pretty impressive line-up, don’t you think? Leaders in the research community are certainly impressed with the work of SOI luminaries. But were you surprised by how many were recognized? Leave a comment and share your thoughts.
(Photos courtesy IBM, UC Berkeley, Leti, UFlorida)