Cadence has announced the immediate availability of two intellectual property (IP) solutions for third-party designs on the 28nm FD-SOI process node that is accessible via the recently announced agreement between STMicroelectronics and Samsung Electronics. (See Cadence press release here.) On this new process node, the Cadence® Denali™ DDR4 IP supports up to 2667Mbps performance, enabling developers requiring high-memory bandwidth for applications such as servers, network switches, and storage fabric to quickly take advantage of the DDR4 standard. In addition, the ultra-low-power Cadence USB High-Speed Inter-Chip (HSIC) PHY IP is also available on this process, which the company says is an ideal solution for inter-chip USB applications. Cadence also announced the qualification of its digital implementation, signoff and custom/analog design tools for the 28nm FD-SOI process
Synopsys has announced that STMicroelectronics has standardized on Synopsys’ IC Compiler™ place-and-route solution for all its CPU and GPU implementations inside its Design Enablement and Services organization. As noted in the press release (read here) ST has a unique processor architecture made possible through their FD-SOI process technology. An FD-SOI device can operate at significantly higher frequencies than an equivalent, traditional, bulk CMOS device. It can also run very fast at low voltages, providing much higher energy efficiency. The close collaboration between the ST design teams and Synopsys has led to a compelling implementation solution that fully exploits the performance and power promise of FD-SOI technology and provides the throughput needed to meet tight time to market windows.
“…you may hear more companies than just STMicro are doing a lot of designs on FDSOI, because
in addition to cost equivalents, they get significant power savings and speed up,” Herb Reiter,
founder and president of eda2asic told EDA Cafe in a recent interview. Adding that “…FDSOI […]
design requirements are just like bulk silicon and are almost totally transparent to the designers,” he
concludes, “…consider the savings in the fab, where you have fewer process steps and less
processing time. Also, remember that with each step in manufacturing, the yield decreases – the
bottom line is that FDSOI is becoming really cost competitive for most apps.”
CEA-Leti and EDA specialist InfiniScale are collaborating on process-variability management in SOI sub-28nm devices. The goals are to offer the design community access to Leti’s FD SOI technology, and to validate InfiniScale tools with measurements on silicon.