Tag Archive GAA

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showca

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers

SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM '13.  Last week we covered the FD-SOI papers (click here

Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT)

Researchers in academia have partnered with industry to increase understanding of critical issues in advanced non-classical CMOS devices. Highly