Tag Archive GaN

Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more

(Image courtesy: SEMI)   For the first time ever, Semicon Europa will be held in Grenoble this year, and FD-SOI will be a major p

IP Value Starts at the Substrate Level

If you say “IP” in the chip business, everyone thinks of cores and design. But in fact, the importance of intellectual property for chips can

An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential lighting

An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and

Soitec’s Smart Cut™ technology is now being leveraged to produce GaN substrates for high-performance LED lighting applications

Soitec's Smart Cut™ technology, best known for its role as the leading technology for producing SOI wafers, is now being leveraged to produce G

Soitec and Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets

World-leading advanced substrate maker Soitec and compound materials leader Sumitomo Electric are launching pilot production of 4” and 6” GaN

Soitec has inked deals with Peregrine and Sumitomo

In recent months, Soitec has inked deals with: • Peregrine for joint development and production of a new, bonded silicon-on-sapphire (SOS) s

Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers

Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers to make lower-cost, high quality GaN engineered subs

GaN’s Bright Future

GaN-on-Si is moving towards becoming a cost-effective enabler for next-generation LED and power devices. During the past decade gallium nitride

Closing the Rectifier Gap

The G2REC project leader explains the role GaN can play in solving a major energy efficiency challenge. Under the aegis of the €30 million Eur