Tag Archive U.Tokyo

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS

The SOI Papers at VLSI ’14 (Part 2):

Last week we posted Part 1 of our round-up of SOI papers at the VLSI Symposia – which included the paper showing that 14nm FD-SOI should match

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers

SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM '13.  Last week we covered the FD-SOI papers (click here

The FD-SOI Papers at IEDM ’13

FD-SOI was a hot topic at this year's IEEE International Electron Devices Meeting (IEDM) (www.ieee-iedm.org), the world’s showcase for the most

Breakthroughs at the IEDM

The IEEE’s International Electron Devices Meeting (IEDM) is the world’s showcase for the most important applied research breakthroughs in t