EDA companies Cadence, Synopsys and Silvaco all gave excellent presentations at the SOI Consortium forums in Nanjing and Shanghai.
Here’s a recap of what the Cadence folks said. (I’ll cover the Synopsys and Silvaco presentations in my next posts.)
At the Shanghai FD-SOI Forum. Dr. Qui Wang, VP & Chief of Staff, talked about FD-SOI Foundry Enablement: From Concept to Mass Production. Cadence, he reminded the packed ballroom, is not just EDA, but also system design enablement targeting verticals. “We’re ready!” he stated.
In the last three years, they’ve done a lot of work on FD-SOI, he said, even working with ARM, GF and Dream Chip on the demo board as a reference design for automotive or vision applications, to show real data to their customers. It uses a quad implementation of the configurable Tensilica Vision P6 core.
To simplify back biasing for the library folks, they worked with the foundries to create interpolations. And as Cadence is traditionally strong in RF/mixed-signal, there’s a new back-biasing tool to simplify board-chip communications, and make the bridge between power and thermal analysis.
Jonathon Smith, Director of Strategic Alliances at Cadence, presented Enabling an Interconnected Digital World — Cadence EDA & IP Update at the Nanjing SOI summit. As he explained, his job is to ensure that design customers can use Cadence tools effectively, not just with Cadence IP, but also with 3rd party IP for the foundry nodes.
He pointed out that the numbers for IoT predictions vary widely, and that industrial IoT (IIoT) will probably account for about 10% of the market. What is sure is that it will contain a large mixed-signal component (RF/digital/analog) and complex packaging.
His customers want to know how fast and easy it is to work in FD-SOI. “Cadence custom and digital tools are ready for FD-SOI,” he said. They have the PDKs and tech files, and the EDA tools are enabled. The reference flows (both digital and custom analog) are tested and ready (Cadence customers who use p-cells and RF look especially for a good mixed-signal flow).
Customers also ask for proof points, and want to know the number of tape-outs they’ve done, performance benchmarks for working silicon and proven IP: this is what gives designers confidence, he said. Examples like Dream Chip’s Computer Vision Processor Chip Design for automotive ADAS CNN applications in 22nm FD-SOI (which they announced at Mobile World Congress in 2017 – see the press release here) have really helped build confidence further, he observed. (In case you missed it, DreamChip presented at the Silicon Valley SOI event in April 2017 – you can get that presentation here.)
Cadence sees SOI as a driving force in IoT markets. They’ve also had some big digital wins recently, he added, and have made some major announcements with the foundries.
For example, in September, they announced that their set of Design for Manufacturing (DFM) tools (signoff solutions) are now qualified on Samsung’s 28nm FD-SOI. This enables customers to create complex, advanced-node designs for the automotive, mobile, IoT, high-performance compute (HPC) and consumer markets (read the press release here). The Samsung Foundry’s PDKs for 28nm FD-SOI are available for download now and incorporate the Cadence Litho Physical Analyzer (LPA), Physical Verification System (PVS) and Cadence CMP Predictor (CCP). In addition to signoff quality, the Cadence DFM tools offer an integration with the Virtuoso® platform and the Innovus™ Implementation System, providing designers with automated fixing capabilities and overall ease of use.
And in October, Cadence announced that its digital and signoff flow, from synthesis to timing and power analysis, supports body-bias interpolation for GlobalFoundries 22FDX™ (read the press release here). The Cadence® tools enable advanced-node customers across a variety of vertical markets—including automotive, mobile, IoT and consumer applications—to use GF’s FD-SOI architecture to optimize power, performance and area (PPA).
Cadence tools for ST’s 28nm FD-SOI foundry process were ready in 2016, btw – there’s a nice video testimonial from ST on power signoff, for example, which you can see here.
The FD-SOI and RF-SOI events in Shanghai and Nanjing were absolute success stories. Over the course of five days, hundreds of executives and design engineers packed halls for talks by the leaders of the top ecosystem players, and for tutorials given by the world-renowned design experts.
These annual events have been ongoing in China now for a few years now. Citing the tremendous growth of SOI, Dr. Xi Wang, DG of SIMIT and head of the Chinese Academy of Science in Shanghai said in his keynote, “We’ve come a long way.” Five years ago, he recalled, very few people in China even knew what SOI was. Today the central government has recognized its value, and the ecosystem is riding a wave of growth and strength. A national industrial IC group has been approved for investment, and design/IP are ready. The industry has reached a consensus, he said, that FD-SOI is cost-effective and complementary to Finfet, while RF-SOI has reached an almost 100% adoption rate in front-end switches for mobile phones.
Many of the presentations are now publicly available on the Events page of the SOI Consortium website. Here are the links:
Over the next few weeks, I’ll cover the highlights of each of these events. Their success clearly represents a tremendous vote of confidence for the SOI ecosystem in China and worldwide.
“The success of these SOI events is a testament to China’s recognition of the great opportunity of SOI-based chip technologies. FD-SOI decreases power consumption and enables deep co-integration of digital, analog, RF, and mm-wave. RF-SOI enables 4G and 5G connectivity with even richer integrated functionalities. It allows the fusion of the RF switch, LNA, and PA, for supporting both traditional sub-6GHz but also mm-wave frequency ranges. SOI technologies also offer a means for China – already the world’s largest chip consumer – to leap to the forefront of chip design and manufacturing,” noted Giorgio Cesana, Executive Co-Director of the SOI Consortium.
The events were followed by top tech news outlets in China. Links follow below (the pieces are in Chinese; or you can open them in Google Translate or Chrome to read them in the language of your choice). Tip: in these pieces you’ll find lots of great pics of key slides, including some that have not been shared on the Consortium website.
FD-SOI coverage included pieces in top pubs such as EETimes China, EEFocus, EDN China (plus a focus piece) and Laoyaoba to name a few. Leading bloggers also posted excellent overviews as well as pieces about specific presentations, including those by Samsung, GlobalFoundries and Handel Jones.
Suddenly they’re everywhere: opportunities to learn more about FD-SOI and RF-SOI. Over the next couple of months you can find them in China, Europe and Silicon Valley. Some are organized by the SOI Consortium, others by foundries and partners.
Here’s a quick listing with links for more info on how to register for upcoming China events.
Nanjing, China. SOI Workshop & Tutorial, 21-22 September 2017.
Organized by the Nanjiing city government and the SOI Consortium. The first day is packed with top presenters, including NXP, ST, Samsung, GlobalFoundries, Cadence, Synopsys, as well as design and IP partners. The second day is a tutorial covering FD and RF-SOI, as well as imagers and photonics. Sessions will be given by Synopsys, Silvaco, Incize, ST, Soitec, and the SOI Consortium.
Shanghai, China. FD-SOI Tutorial. 25 September 2017.
Organized by VeriSilicon and the SOI Consortium. Tutorial covers: tech overview; analog/RF/mixed-signal; neuromorphic and IoT processors; EDA & design process flow; eNVM; and using forward & reverse body bias. Session leaders are from SOI Consortium, GlobalFoundries, ST, Soitec, UCBerkley, Evaderis and Greenwaves.
Shanghai, China. FD-SOI Forum. 26 September 2017.
Organized by VeriSilicon, Simgui, SIMIT and the SOI Consortium. The focus is on Ultra Low Power computing, RF, EDA/IP ecosystem growth and accelerating adoption. Presentations by Dr. Xi Wang of China’s SIMIT/CAS, GF’s CEO Dr. Sanjay Jha, Samsung’s EVP & GM Dr. ES Jung, as well as from Ron Martino, VP & GM from NXP; Paul Boudre, CEO of Soitec; IBS, NSIG, GF, UC Berkeley, VeriSilicon, Cadence and Synopsys. There’s also a very impressive line-up for a final panel discussion.
Shanghai, China. International RF-SOI Workshop. 27 September 2017.
Organized by Simgui, Sitri, SIMIT, VeriSilicon and the SOI Consortium. Now in its 5th year, this conference has grown very quickly: last year it was in a ballrooom with standing room only (note that RF-SOI chips are now found in pretty much every smart phone on the planet). The focus this year is on IoT, mobile, 5G connectivity, and mmW. Keynotes are from TowerJazz, Sony and China Mobile. Presentations from RDA, SMIC, Simgui, Will-Micro, GF, Soitec, Silvaco and Screen.
BTW, for events organized by the SOI Consortium, many of the presentations are available on the website (from Tokyo this summer, for example, and Silicon Valley last spring – and going on back through 2015). Scroll down through Events to Past Events to find them.
Leveraging GF’s 22FDX® FD-SOI technology, GlobalFoundries and Verisilicon are developing IP to enable a complete cellular modem module on a single chip, including integrated baseband, power management, RF radio and front-end module combining both Narrowband IoT (NB-IoT) and LTE-M capabilities. (Read the full press release here.) The new approach is expected to deliver significant improvements in power, area, and cost compared to current offerings.
The companies say this will be the industry’s first single-chip IoT solution for next-generation Low Power Wide Area (LPWA) networks. LPWA technology takes advantage of the existing LTE spectrum and mobile infrastructure, but focuses on delivering ultra-low power, extended range, and much lower data rates for devices that transmit small amounts of infrequent data, such as connected water and gas meters.
The two leading LPWA connectivity standards are LTE-M, which is expected to get traction in the U.S. market, and NB-IoT, which is gaining ground in Europe and Asia. For example, the Chinese government has targeted NB-IoT for nationwide deployment over the coming year. The combination of these two technologies is expected to push cellular M2M module shipments to nearly half a billion by 2021, according to ABI Research.
“Integrated with RF and PA on GF 22FDX, the baseband and protocol stack are being implemented on our energy efficient and programmable ZSPnano that is optimized for control and data flow with powerful low latency, single cycle instructions for signal processing,” said Wayne Dai, VeriSilicon Chairman, President and CEO. “GF’s new 300 mm fab for FDX in Chengdu and IP platforms such as this single chip solution for integrated NB-IoT and LTE-M, will have significant impact on China IoT and AIoT (AI of Things) industries.”
GF and VeriSilicon expect to tape out a test chip based on the integrated solution, with silicon validation in Q4 2017. The companies plan to pursue carrier certification in mid-2018.
ARM is stepping up its effort to support the FD-SOI ecosystem. “Yes, we’re back,” confirmed Ron Moore, VP of ARM’s physical design group. This and much more good news came out of the recent FD-SOI Symposium organized in Silicon Valley by the SOI Consortium.
The full-day Symposium played to a packed room, and was followed the next day by a full-day design tutorial. Though it was a Silicon Valley event, people flew in from all over the world to be there. (BTW, these symposia and tutorials will also be offered in Japan in June, and Shanghai in the fall). I’ll cover the Silicon Valley FD-SOI design tutorial (which was excellent, btw) in a separate post.
Most of the presentations are now posted on the SOI Consortium website. Here in this ASN post, I’ll touch on some of the highlights of the day. Then in upcoming posts I’ll cover the presentations from Samsung and GlobalFoundries.
If you’re designing in FD-SOI, we’ll help: that was the key message from ARM’s Ron Moore during the panel discussion at the end of the day. Earlier that morning, he’d given an excellent presentation entitled Low-Power IP: Essential Ingredients for IoT Opportunities.
CAGR for most IoT units is roughly 50%, he said, counting home (1.6B units by 2020), city (1.8B), industrial (0.6B) and automotive (1.1B). Compare that to the 2.8B smart phones – which he sees as a remote control and display device. The key differentiator for IoT is that 90% of the time the chip is idle, so you really don’t want leakage.
FD-SOI, he said, gives you a silicon platform that’s highly controllable, enables ultra-low power devices, and is really good with RF. ARM’s worked with Samsung’s 28FDS FD-SOI offering comparing libraries on bulk and FDSOI, for example, and came up with some impressive figures (see the picture below).
The foundry partners and wafer providers are in place. So now ARM is asking about which subsystems are needed to fuel FD-SOI adoption. Ron recognizes that the ARM IP portal doesn’t yet have anything posted for FD-SOI, but they know they need to do it. He called on the SOI Consortium to help with IoT reference designs and silicon proof points.
In the Q&A, audience member John Chen (VP of Technology and Foundry Management at NVIDIA) asked about FD-SOI and low-cost manufacturing of IoT chips. Moore replied that we should be integrating functionality and charging a premium for IoT chips – this is not about your 25-cent chip, he quipped.
Geoff Lees, SVP & GM of NXP’s Microcontroller business gave a terrific talk on their new i.MX 7 and 8 chips on 28nm FD-SOI. (And Rick Merritt gave it great coverage in EETimes – see NXP Shows First FD-SOI Chips.)
NXP’s been sampling the i.MX 7 ULP to customers over the last six months, the i.MX 8QM is ramping, and the i.MX 8QXP, 8Q and 8DX are enroute. Each of these chips is optimized for specific applications using biasing. A majority of the design of each chip is hard re-use, and the subsystems can be lifted and dropped right into the next chip in the series. Power consumption and leakage are a tiny fraction of what they’d had been in previous generations. Ultra low power (aka ULP) is heading to new levels, he says.
With FD-SOI, it’s easy to optimize at multiple points: in the chip design phase, in the production phase and in the use phase. They can meet a wide range of use cases, precisely targeting for power usage. FD-SOI makes it a win-win: it’s a very cost effective way to work for NXP, plus their customers today need that broader range of functionality from each chip.
Geoff tipped his hat to contributions made here by Professor Boris Murmann of Stanford, who’s driving mixed signal and RF into new areas, enabling high-performance analog and RF integration. (Folks attending the FD-SOI tutorial the next day had the good fortune to learn directly from Professor Murmann.)
Finally, he cited something recently pointed out by Soitec (they’re the SOI wafer folks) Chief Scientist Bich-Yen Nguyen: if half your chip is analog and/or RF, she’s observed, the future is very bright indeed for FD-SOI.
Briefly, here are some more highlights.
Synopsys: John Koeter, VP of the Marketing Solutions group showed slides of what they’ve done in terms of IP for Samsung and GlobalFoundries’ FD-SOI offerings. But there’s a lot they’ve done with partners he couldn’t show because it’s not public. In terms of tools and flows, it’s all straightforward.
Dreamchip: Designing their new chip in 22nm FD-SOI was 2.5x less expensive than designing it in FinFET would have been, said COO Jens Benndoorf in his presentation, New Computer Vision Processor Chip Design for Automotive ADAS CNN Applications in 22nm FDSOI. One application for these chips (which taped out in January) will be “digital mirroring”: replacing sideview mirrors with screens. Why hasn’t this been done before? Because LED flickering really messes with sensor readings – but they’ve mastered that with algorithms. The chip will also be used for 360o top view cameras and pedestrian detection. They’re using Arteris IP for the onchip networking, and implemented forward body bias (FBB). The reference platform they created for licensing has generated lots of interest in the automotive supply chain, he said.
Greenwaves: CEO Loic Lietar talked about the high performance, ultra-low power IoT applications processor they’re porting from bulk to FDSOI with a budget of just three million euros. The RISC-V chip leverages an open source architecture (which he says customers love) and targets smart city, smart factory, security and safety applications. As such, it needs to wake up very fast using just microwatts of power – a perfect match for body biasing in FD-SOI.
Leti: In her talk about roadmaps, CEO Marie-Noelle Semeria said the main two drivers they’re seeing in the move to FD-SOI are #1: low power (a customer making chips for hearing aids can cut power by 8x using body biasing, for example) and #2: RF (with Ft and Fmax performance that “…will be hard for FinFET to achieve”). Leti knows how to pull in all kinds of boosters, and is finding that RF performance is still excellent at the 10/7nm node. They’ve developed a low-power IoT platform with IP available for licensing. Other recent FD-SOI breakthroughs by Leti include: demonstration of a 5G mmW 60GHz transceiver developed with ST; the first 300mm Qbit, opening the door to quantum computing; a photodiode opening the door to a light-controlled SRAM; and a new 3D memory architecture leveraging their CoolCubeTM that they’re working on with Stanford.
IBS: CEO Handel Jones predicts that there “will be war in the year to come” at the 22nm node, as all the big foundries take aim. FD-SOI is the best technology for RF, ULP and AMS, and there’s a huge market for it. He also said China made the right decision to support FD-SOI, and will come out ahead in 5G.
The day ended with a lively panel discussion (moderated by yours truly) featuring experts from ARM, GF, Invecas, Soitec, Synopsys, Verisilicon and Sankalp. IP availability was a big theme, but generally there was agreement that while some gaps still exist, they’re being filled: lack of IP is no longer an issue. Soitec VP Christophe Maleville confirmed that the wafers for FD-SOI are readily available and that they’re seeing excellent yields.
All in all, it was another really good day for FD-SOI in Silicon Valley.
The panel discussion rounding out the day at the recent FD-SOI Forum in Shanghai ended an exciting week (GF’s 12nm FD-SOI & ecosys, Sony’s FD-SOI GPS in the Huami watch) on a decidedly optimistic note. Here’s a quick rundown of some of what was said.
(As soon as the presentations given earlier in the day are posted, we’ll take a quick cruise through those, too.)
Mahesh Tirupattur, EVP at low-power SERDES pioneer Analog Bits started it off with the reminder that for anything “always on” in IoT, FD-SOI’s always better. They had a terrific experience porting their SERDES IP to 28nm FD-SOI (which they detailed last spring – see the ppt here). The port from 28 bulk took 2 1/2 months (vs. to FinFET, which took almost 6). Even without using body bias, they got performance up by around 15% and leakage down by about 30% (he added that with body bias, they could get five times that).
He compared porting to FD-SOI to playing high school ball, vs. a port to FinFET which is like competing in the Olympics. ESD was different, but not a big deal – you just need to “read the manual”. Heating? Nothing an engineer can’t resolve. For IoT, FinFETs are like using a cannon to shoot a mosquito, he quipped.
He later ticked off a few more advantages of FD-SOI for the IoT design community: system cost, lower power – and here’s a particularly interesting observation – cheaper packaging. They were able to do wire bonding, so they were able to package a wearable video app in a plastic capsule. All things considered, FD-SOI offers the perfect solution, he said (and now he’s got silicon with “dramatic results” to prove it), adding that the IP guys need to evangelize this.
GloFo VP Subramani Kengeri took a moment to look back before he looked forward. “FD-SOI is not new,” he reminded us. It was explored and researched for a decade. But at the beginning, CPUs were driving the industry, and everyone else followed suite. But now in mobile and IoT, RF is becoming more important, and what was good for the CPU is no longer what’s good for everything else. He tipped his hat to Soitec, ST and Leti, who “kept the lights on” and kept driving FD-SOI forward. Now with 5G on the horizon, FD-SOI is the enabler, he added.
He also noted that FD-SOI gets you the maximum memory onchip, and that with 12FDX, we’ll be seeing the world’s smallest SRAM. So that opens a new degree of freedom. The EDA partners have been working on automating body bias in the PDK for greater power management. He cites an ARM core with on-demand performance that can be used “intelligently”. Is it complicated? Not really, he says, especially if it’s automated. In fact he sees body bias opening the market for “extraordinary, innovative products” very soon. Key IP is in place. And it’s not just for IoT: aside from high-end CPUs, FD-SOI is optimal for everything. “Everything’s happening now, and it’s moving really fast,” he said.
SOI wafer leader Soitec VP Christophe Maleville was asked if he saw any limit on manufacturing the ultra-thin wafers for the 7nm node. No problem, he said – they can do those wafers with 4nm of strained top silicon and a 10nm layer of insulating BOX. They’ve been working on FD-SOI wafers for over a decade, he reminded us, with Leti, IBM and ST. Back in 2013 when ST announced the Nova-Thor hitting 3GHz (or 1GHz at just 0.6V), everything was in place: the metrology was ready, reliability was controlled.
Today they’ve got a 15nm BOX layer in manufacturing, with no limits in moving to 10nm for customers going for very low power. For the strained top silicon needed for the 7nm node, they spent years working on strain with IBM et al in Albany, so they’re not starting from scratch. That substrate will be mature in just two years, so from a substrate point of view, he said, “7nm is no problem”.
In response to a follow-up question from a well-known analyst in the China tech industry, panel moderator and Verisilicon CEO Wayne Dai said that the design community in China has the skills to do FD-SOI, no problem. He’d like to see more IP, but FD-SOI has powerful advantages in terms of cost, analog/memory and back biasing.
Dai then asked the panelists if they thought we’d be seeing a foundry in China opting for FD-SOI by next year – all but one said yes. One thing all the panelists agreed on, however: they all expect to see FD-SOI products (and lots of them) on the stage at the Shanghai FD-SOI forum in 2017.
12nm FD-SOI has now officially joined the GlobalFoundries’ roadmap, targeting intelligent, connected systems and beating 14/16nm FinFET on performance, power consumption (by 50%!) and cost (see press release here). Customer product tape-outs are expected to begin in the first half of 2019. GloFo also announced FDXcelerator™, an ecosystem designed to give 22FDX™ SoC design a boost and reduce time-to-market for its customers (press release here).
The news turned heads worldwide (hundreds of publications immediately picked up the news) – and especially in China. “We are excited about the GlobalFoundries 12FDX offering and the value it can provide to customers in China,” said Dr. Xi Wang, Director General, Academician of Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology. “Extending the FD-SOI roadmap will enable customers in markets such as mobile, IoT, and automotive to leverage the power efficiency and performance benefits of the FDX technologies to create competitive products.”
Wayne Dai, CEO of VeriSilicon (headquartered in Shanghai but designing for the world’s biggest names in the chip biz), added, “We look forward to extending our collaboration with GlobalFoundries on their 12FDX offering and providing high-quality, low-power and cost-effective solutions to our customers for the China market. The unique benefits of FD-SOI technologies enable us to differentiate in the automotive, IoT, mobility, and consumer market segments.”
The ultra-thin FD-SOI wafers are where it all starts, and they’re ready to go in high volume, says Paul Boudre, CEO of SOI wafer leader Soitec. “We are very pleased to see a strong momentum and a very solid adoption from fabless customers in 22FDX offering,” he adds. “Now this new 12FDX offering will further expand FD-SOI market adoption. This is an amazing opportunity for our industry just in time to support a big wave of new mobile and connected applications.”
GloFo’s 12FDXTM platform, which builds on the success of its 22FDXTM offering, is designed to enable the intelligent systems of tomorrow across a range of applications, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles. Increased integration of intelligent components including wireless (RF) connectivity, non-volatile memory, and power management—all while driving ultra-low power consumption—are key 12FDX selling points that FinFETs can’t touch.
The technology also provides the industry’s widest range of dynamic voltage scaling and unmatched design flexibility via software-controlled transistors—capable of delivering peak performance when and where it is needed, while balancing static and dynamic power for the ultimate in energy efficiency.
“Some applications require the unsurpassed performance of FinFET transistors, but the vast majority of connected devices need high levels of integration and more flexibility for performance and power consumption, at costs FinFET cannot achieve,” said GLOBALFOUNDRIES CEO Sanjay Jha. “Our 22FDX and 12FDX technologies fill a gap in the industry’s roadmap by providing an alternative path for the next generation of connected intelligent systems. And with our FDX platforms, the cost of design is significantly lower, reopening the door for advanced node migration and spurring increased innovation across the ecosystem.”
Kudos came in from G. Dan Hutcheson, CEO of VLSI Research, IBS CEO Handel Jones, Linley Group Founder Linley Gwennap, Dasaradha Gude, CEO of IP/design specialists INVECAS, Leti CEO Marie Semeria and NXP VP Ron Martino (they’ve already started on 28nm FD-SOI for their i.MX line – read his superb explanations in ASN here).
Simultaneously to the 12FDX announcement, GloFo announced the FDXcelerator Partner Program. It creates an open framework under which selected Partners can integrate their products or services into a validated, plug and play catalog of design solutions. This level of integration allows customers to create high performance designs while minimizing development costs through access to a broad set of quality offerings, specific to 22FDX technology. The Partner ecosystem positions members and customers to take advantage of the broad adoption and accelerating growth of the FDX market.
Initial partners of the FDXcelerator Partner Program are: Synopsys (EDA), Cadence (EDA), INVECAS (IP and Design Solutions), VeriSilicon (ASIC), CEA Leti (services), Dreamchip (reference solutions) and Encore Semi (services). These companies have already initiated work to deliver advanced 22FDX SoC solutions and services.
Initial FDXcelerator Partners have committed a set of key offerings to the program, including:
Additional FDXcelerator members will be announced in the following months.
For this 3-part series, ASN spoke with Kelvin Low, senior director of marketing for Samsung Foundry and Axel Fischer, director of Samsung System LSI business in Europe about the company’s FD-SOI offering. Here in part 3, we’ll talk about the ecosystem. (In part 1 we talked about technology readiness, and in part 2, we talked about design.)
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ASN: Let’s talk a little more about IP availability.
Axel Fischer: The availability of IP is key for engaging these market segments. The technology itself is ready. The gating item often is the IP element.
Kelvin Low: The IP element is broadly ready. But we’re not stopping there. We’re enhancing the IP and adding on new suppliers. Most of them we can’t name yet just because of timing. But we can confidently say that multiple new IP suppliers are coming online, and many more have started to inquire about how they can get onboard.
ASN: In terms of the ecosystem, what remains to be done?
KL: The ecosystem can never end. Enhancements will always be welcome. More support – there are so many other EDA software companies out there available. We will enable them if there is a customer behind them. IP are dictated by the standards. As long as the product requires that, we’ll continue to look for partners to develop the IP.
KL: Back to one of the strategic decisions we made. We have immediately made available what ST Micro has in terms of IP portfolio to our customers. Then continuously build this ecosystem according to the new customers that we’re acquiring. ST Micro has developed these IPs for their own internal products, and they were gracious enough to allow these IPs to be opened up to be used by all customers without restriction.
As a group, as an ecosystem, we have to be more proactive in educating the market. What we’ve seen so far, whether it’s an initiative by Leti or an initiative by the SOI Consortium, these are very helpful. Now you have so many more knobs that you can play with, for designers we have to prepare all these PVT – which is process, voltage, temperature, and timing points so they can actually use it. It’s just a matter of preparation needed from our end, working with the ecosystem. The EDA tools must be optimized to make it as seamless, as transparent as possible.
ASN: Any closing thoughts?
KL: 28FDSOI is real. Samsung is committed. The technology is qualified already. The ecosystem is ready and expanding. This is working stuff. It’s not a powerpoint technology.
This is the last installment in ASN’s 3-part interview with Samsung on their 28nm FD-SOI foundry offering. If you missed the other parts, you can still read part 1 about technology readiness (click here), and part 2 on design considerations (click here).