WORLD’S FIRST GaN-ON-INSULATOR
Posted date : Apr 18, 2005

Here’s a quick review of some recent Smart Cut activity.

March 2005 – WORLD’S FIRST GALLIUM NITRIDE (GaN)-ON- INSULATOR SUBSTRATE

Soitec announced that its Smart Cut technology was used to split and transfer a thin layer of GaN from a high-quality GaN donor wafer onto a carrier wafer— generating the world’s first single- crystal, thin-film gallium nitride (GaN)-on-insulator substrate. This represents a critical step forward in enabling the development of high-performance blue and white light-emitting diodes (LEDs), as well as for improving current and future device performance in radio-frequency (RF) and discrete power applications

January 2005 – SOITEC SIGNS MULTI-YEAR AGREEMENT WITH AMD FOR THE SUPPLY OF UNIBOND™ SOI WAFERS

Soitec announced a multi-year agreement to supply AMD with both 200- and 300-mm SOI wafers, manufactured using Soitec’s proprietary Smart Cut™ process. The agreement is projected to be worth more than $50 million for 2005 alone.

December 2004 – SOITEC GROUP AND ASM INTERNATIONAL PRODUCE FIRST INDUSTRIALLY MANUFACTURED 300-MM STRAINED SOI SUBSTRATES

The Soitec Group and ASM International N.V. announced samples of the industry’s first industrially manufactured 300-mm sSOI wafers. Soitec and ASM also announced the extension of their partnership to next-generation sSOI products •