EDS Honors SOI Pioneer
Posted date : Apr 18, 2005

SOI pioneer Jerry G. Fossum has received the most recent J.J. Ebers award, “For outstanding contributions to the advancement of SOI CMOS devices and circuits through modeling.”

He thereby joins such industry luminaries as Andrew Grove and Bernard Meyerson in receiving one of the Electron Devices Society’s (EDS) and IEEE’s highest honors.

Dr. Fossum’s research led to the industry’s first SOISPICE models for PD and FD devices, accounting for features such as gate-gate charge coupling and threshold voltage dependences, floating-body effects and transient hysteresis. Now with the SOI Group at the University of Florida (Gainesville), he is developing models for nonclassical CMOS devices on SOI, such as the double-gate FinFET •

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