GaN On the Move
Posted date : Apr 18, 2005

• High Growth Projected for GaN

According to a recent report in “SST” magazine, the Silicon Valley-based market research firm Strategies Unlimited is projecting substantial growth for the gallium nitride (GaN) market. Worth $3.2 billion in 2004, the market is expected to increase to $7.2 billion over the next five years, making it one of the most successful compound semiconductor materials. The report, entitled “Gallium Nitride 2005 – Technology Status, Applications, and Market Forecasts”, says that white LEDs account for over half of the GaN-related LED market. It also sees big growth coming

from high-power LEDs for lighting, deep UV emitters, and laser diodes for optical storage. See for more information •

World’s Most Powerful AlGaN/GaN HEMTs

Earlier this year, Picogiga announced that its advanced epitaxial capabilities enabled the development of the world’s most powerful silicon-based aluminum gallium nitride (AlGaN/GaN) high- electron-mobility transistors (HEMTs). Picogiga developed the AlGaN/GaN HEMTs structure with its MBE process for material growth, providing the structures to the research and development group of TriQuint Semiconductor, a leading supplier of high-performance components, modules and foundry services for communications applications.

Silicon substrates have emerged as an attractive alternative to silicon carbide and sapphire for AlGaN/GaN HEMTs due to silicon’s good relative thermal conductivity, broad availability, consistency of supply and quality and proven cost-effectiveness •

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