A selection of recent papers of interest to the advanced substrates community.
Posted date : Jul 11, 2005

• A paper by Soitec researchers P. Nguyen, I. Cayrefourcq, K. K. Bourdelle, A. Boussagol, E. Guiot, N. Ben Mohamed, N. Sousbie, and T. Akatsu, “Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range” was recently published in the Journal of Applied Physics, 97, 083527 (2005).

• A paper by researchers at Texas Instruments, Infineon and Soitec (C. Maleville, P. Patruno) on the “Full-partial depletion effects in FinFETs” was published in Electronics Letters (W. Xiong et al., 14 April 2005, Vol. 41, No. 8).

• Researchers from National Taiwan University in the Republic of China published a paper on “Mobility Enhancement Technologies” in IEEE Circuits and Devices (Chee Wee Liu et al, Vol. 21, No. 3, pp. 21-36, May-June 2005).

• Freescale and Soitec researchers (I. Cayrefourcq et al) published a paper on “Mobility enhancement through substrate engineering” in Silicon-on-Insulator Technology and Devices XII, ECS Proc Vol. 2005- 03, edited by G. K. Celler et al. (The Electrochemical Society, Pennington, NJ, USA, 2005) pp.191-206.

• Researchers from Soitec (M. Kennard et al) and ASM America presented a joint paper on “The Critical Role of Epitaxy in the Fabrication of Enhanced Mobility Substrates” at the Fourth International Conference on Silicon Epitaxy and Heterostructures ICSI-4 (Awaji Island, Hyogo, Japan, May 23-26, 2005).

• Researchers from Picogiga (P. Bove et al) and Soitec presented a paper on “Progress in Microwave GaN HEMTs on Silicon and Smart Cut™ engineered substrates for high power applications” at the last CS-MAX in Monterey, CA. •

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