Top honors go to advanced substrate pioneers – again.
For the second year in a row, the IEEE Electron Devices Society (EDS) gave the J.J. Ebers Award for “…outstanding technical contributions to electron devices” to an SOI pioneer. The 2005 honor went to Bijan Davari of IBM, now Vice President of Next Generation Computing Systems/Technology.
The awards program noted that Dr. Davari and his team at IBM’s Semiconductor Research and Development Center were responsible for the definition and development of pioneering technologies such as SOI, among their many accomplishments. The previous year’s award went to SOI modeling innovator Jerry G. Fossum.
Another top EDS honor, the George E. Smith Award, went to the MIT and Amberwave team of Zhi-Yuan Charles Cheng, Arthur J. Pitera, Minjoo Larry Lee, Jongwan Jung, Judy L. Hoyt, Dimitri A. Antoniadis and Eugene A. Fitzgerald for their paper entitled, “Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface.” The paper covered FD-SGOI research conducted at MIT.
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