High-Speed Wafer Bonder Boosts SOI MEMS Productivity
Posted date : Dec 6, 2006

By eliminating the need for heating and cooling, MHI’s new system brings volume production to standard and SOI MEMS.

MHI’s high-speed wafer-bonder increases packaging throughput for SOI and standard MEMS applications. (Courtesy: Mitsubishi Heavy Industries)

One of the advantages cited in SOI MEMS design is the ability to create more complex structures serving a wider range of applications. However, the industry’s standard wafer-level packaging can be a challenge, as it typically needs to heat up the bonding materials, which takes time and can impact yield. To help bring SOI and other MEMS applications further into the mainstream, manufacturing systems are needed that enable high-speed, high-yield and low-cost processes.

In response, Mitsubishi Heavy Industries (MHI) has developed high-speed wafer-bonding equipment for MEMS applications. The system, which operates in a vacuum chamber, avoids thermal treatment by using ion-beam activation at the molecular level of the wafer surface. Benefits include:

• Elimination of thermal stress induced in the device, since it is a room temperature process;

• High throughput of vacuum-sealed devices, as there is no need for heating and/or cooling; and

• The choice of a broader selection of materials, including: silicon, silicon dioxide, oxides (including some ceramics), compound materials, metals and hetero materials.

This enables a very high degree of accuracy and miniaturization in vacuum-sealed devices. Three-wafer bonding is also available for the future hybrid MEMS devices.

The MHI high-speed wafer bonder for MEMS is distributed by the Seika Corporation.
More information can be obtained from soi@jp.seika.com.

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