A selection of recent papers of interest to the advanced substrates community.
Posted date : May 11, 2007

New Developments of Semiconductor Materials and Devices for High Frequency Applications, Chapter 3, (in Japanese), Makoto Yoshimi, CMC Books, Nov.13, 2006, pp.108-116.

ubstrates made from bulk germanium, C. Deguet, L. Sanchez, T. Akatsu, F. Allibert, J. Dechamp, F. Madeira, F. Mazen, A. Tauzin, V. Loup, C. Richtarch, D. Mercier, T. Signamarcheix, F. Letertre, B. Depuydt, and N. Kernevez, Electronics Letters 42 (7), p. 415-417, (30 March 2006)

Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications, Soohwan Jang, F. Ren, S. J. Pearton, B. P. Gila, M. Hlad, C. R. Abernathy, Hyucksoo Yang, C. J. Pan, Jenn-Inn Chyi, P. Bove, H. Lahreche, and J. Thuret, J. Electronic Materials 35 (4), pp. 685-690 (2006).

Study of Bending-Induced Strain Effects on MuGFET Performance, Kyoungsub Shi, Weize Xiong, Chung Yeung Cho, C. Rinn Cleavelin, Thomas Schulz, Klaus Schruefer, Paul Patruno, Lee Smith, and Tsu-Jae King Liu, IEEE Electron Device Letters 27 (8), pp. 671-673 (Aug. 2006).

AlGaN/GaN high electron mobility transistors on Si/SiO2/poly-SiC substrates, T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, L. Covert, J. Lin, S. J. Pearton, P. Bove, H. Lahreche and J. Thuret, J. Vacuum Science & Technology B 24, (5), pp. 2302-2305 (September 2006).

Electrical Performance of GaN Schottky Rectifiers on Si Substrates, L. Voss, S. J. Pearton, F. Ren, P. Bove, H. Lahreche, and J. Thuret, J. Electrochem. Soc., 153 (7), pp. G681-G684 (2006)

Angle-resolved XPS study of thin oxides after wet cleaning on Si0.8Ge0.2 substrates, E. Martinez, A. Abbadie, O. Renault, I. Cayrefourcq, and S. Quiais-Marthon, Surface and Interface Analysis 38, pp. 437-439 (2006).

New Developments of Semiconductor Materials and Devices for High Frequency Applications, Chapter 3, (in Japanese), Makoto Yoshimi, CMC Books, Nov.13, 2006, pp.108-116.

Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium, C. Deguet, L. Sanchez, T. Akatsu, F. Allibert, J. Dechamp, F. Madeira, F. Mazen, A. Tauzin, V. Loup, C. Richtarch, D. Mercier, T. Signamarcheix, F. Letertre, B. Depuydt, and N. Kernevez, Electronics Letters 42 (7), p. 415-417, (30 March 2006).

Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications, Soohwan Jang, F. Ren, S. J. Pearton, B. P. Gila, M. Hlad, C. R. Abernathy, Hyucksoo Yang, C. J. Pan, Jenn-Inn Chyi, P. Bove, H. Lahreche, and J. Thuret, J. Electronic Materials 35 (4), pp. 685-690 (2006).

Study of Bending-Induced Strain Effects on MuGFET Performance, Kyoungsub Shi, Weize Xiong, Chung Yeung Cho, C. Rinn Cleavelin, Thomas Schulz, Klaus Schruefer, Paul Patruno, Lee Smith, and Tsu-Jae King Liu, IEEE Electron Device Letters 27 (8), pp. 671-673 (Aug. 2006).

AlGaN/GaN high electron mobility transistors on Si/SiO2/poly-SiC substrates, T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, L. Covert, J. Lin, S. J. Pearton, P. Bove, H. Lahreche and J. Thuret, J. Vacuum Science & Technology B 24, (5), pp. 2302-2305 (September 2006).

Electrical Performance of GaN Schottky Rectifiers on Si Substrates, L. Voss, S. J. Pearton, F. Ren, P. Bove, H. Lahreche, and J. Thuret, J. Electrochem. Soc., 153 (7), pp. G681-G684 (2006).

Angle-resolved XPS study of thin oxides after wet cleaning on Si0.8Ge0.2 substrates, E. Martinez, A. Abbadie, O. Renault, I. Cayrefourcq, and S. Quiais-Marthon, Surface and Interface Analysis 38, pp. 437-439 (2006).

Impact of Advanced SOI Substrates on Device Architecture and Design, Carlos Mazuré and Jocelyne Wasselin, ICICDT, Padua 2006.

New Developments of Semiconductor Materials and Devices for High Frequency Applications, Chapter 3, (in Japanese), Makoto Yoshimi, CMC Books, Nov.13, 2006, pp.108-116.

Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium, C. Deguet, L. Sanchez, T. Akatsu, F. Allibert, J. Dechamp, F. Madeira, F. Mazen, A. Tauzin, V. Loup, C. Richtarch, D. Mercier, T. Signamarcheix, F. Letertre, B. Depuydt, and N. Kernevez, Electronics Letters 42 (7), p. 415-417, (30 March 2006).

Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications, Soohwan Jang, F. Ren, S. J. Pearton, B. P. Gila, M. Hlad, C. R. Abernathy, Hyucksoo Yang, C. J. Pan, Jenn-Inn Chyi, P. Bove, H. Lahreche, and J. Thuret, J. Electronic Materials 35 (4), pp. 685-690 (2006).

Study of Bending-Induced Strain Effects on MuGFET Performance, Kyoungsub Shi, Weize Xiong, Chung Yeung Cho, C. Rinn Cleavelin, Thomas Schulz, Klaus Schruefer, Paul Patruno, Lee Smith, and Tsu-Jae King Liu, IEEE Electron Device Letters 27 (8), pp. 671-673 (Aug. 2006).

AlGaN/GaN high electron mobility transistors on Si/SiO2/poly-SiC substrates, T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, L. Covert, J. Lin, S. J. Pearton, P. Bove, H. Lahreche and J. Thuret, J. Vacuum Science & Technology B 24, (5), pp. 2302-2305 (September 2006).

Electrical Performance of GaN Schottky Rectifiers on Si Substrates, L. Voss, S. J. Pearton, F. Ren, P. Bove, H. Lahreche, and J. Thuret, J. Electrochem. Soc., 153 (7), pp. G681-G684 (2006).

Angle-resolved XPS study of thin oxides after wet cleaning on Si0.8Ge0.2 substrates, E. Martinez, A. Abbadie, O. Renault, I. Cayrefourcq, and S. Quiais-Marthon, Surface and Interface Analysis 38, pp. 437-439 (2006).

Impact of Advanced SOI Substrates on Device Architecture and Design, Carlos Mazuré and Jocelyne Wasselin, ICICDT, Padua 2006.

The effect of order and dose of H and He co-implant on defect formation and evolution in silicon, Phuong Nguyen, K. K. Bourdelle, T. Maurice, N. Sousbie, A. Boussagol, X. Hebras and L. Portigliatti, F. Letertre, A. Tauzin, and N. Rochat, J. Appl. Phys. 101, 033506 (Feb. 2007).

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