Ghavam Shahidi Wins J.J. Ebers Award
Posted date : May 11, 2007

For the third year in a row, the IEEE/EDS has given one of its most prestigious prizes to a towering figure in the world of SOI.

Ghavam Shahidi, who initiated the SOI development program at IBM in 1989, has received the most recent J.J. Ebers award, “For contributions and leadership in the development of Silicon-On-Insulator CMOS technology.”

This marks the third year in a row that the Electron Devices Society (EDS) and IEEE have bestowed this prestigious prize on an SOI leader. The previous two years, the award went to Bijan Davari and Jerry Fossum.

In the 1990’s, Dr. Shahidi’s team at IBM Research demonstrated the device design and 5-inch SOI material. The group was then moved to IBM Microelectronics and the Advanced Silicon Technology Center (ASTC).

Over the next few years, Dr. Shahidi led the development of SOI CMOS technology at ASTC. This work resulted in: the development of 8-inch SOI technology infrastructure; the demonstration of SOI performance gain; qualification of multiple CMOS SOI technologies and their transfer to manufacturing; establishment of design infrastructure; and the first mainstream use of SOI. He remained with IBM Microelectronics as the director of high-performance logic development until 2003.

Dr. Shahidi received his B.S., M.S., and Ph.D. degrees, all in electrical engineering, from MIT. His current title is IBM Fellow and Director, Silicon Technology.

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