Posted date : May 14, 2008


• IBM and partners announced the ‘high-k gate-first‘ approach for 32nm SOI, boosting SOI transistor speed >30% at a lower voltage.

• At ISSCC 08, an IBM paper on the automated migration of Cell from 65nm to 45nm indicated chip power consumption was reduced by about 40% and area by 34%.

• IBM reported in Nature Photonics on the world’s tiniest nanophotonic switch, which was built on SOI.

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