Bernstein and Rohrer’s introduction to SOI device physics and design concepts guides students and engineers through the fundamentals.
Bernstein recalls that when the book was first published and put on sale at ISSCC in 2000, IBM had just announced SOI. At the conference, Bernstein gave a sold-out tutorial. “It was a very exciting time,” he recalls.
Bernstein is now Senior Technical Staff Member at the IBM T.J. Watson Research Center, currently exploring Low Power CMOS Circuit Design and Architecture for use in high performance server processors as well as in battery-powered applications. His colleague Rohrer, with whom he has collaborated on a number of books, papers, and patents over the years, is a Distinguished Engineer (“DE”) in the IBM Systems Technology Group.
Although the book has not been updated, Bernstein explains that the underlying physics of SOI remain the same. “As more companies design and consume SOI-based devices, understanding the fundamentals is still of value,” he notes. “Virtually every emerging new transistor device technology, such as FinFETs and double-gated transistors, are built on SOI substrates. As voltages are reduced with scaling, SOI has exhibited versatility unavailable in bulk CMOS.”
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