Intel presented A Scaled Floating Body Cell (FBC) Memory with
High-k+Metal Gate on Thin-Silicon and Thin-BOX for 16-nm Technology Node and Beyond. The company said its SOI-based FBC memory cell is the smallest ever reported, and has the lowest operating voltage. It is predicted to be feasible through the 11nm node.
Hitachi and Renesaspresented Smallest Vth Variability by Intrinsic Silicon on Thin BOX (SOTB) CMOS with Single Metal Gate. Solving threshold voltage (Vth) variability eliminates a major obstacle for nodes beyond 45nm. The companies predict this will enable SOTB to run through the end of the device miniaturization era.
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