Conference Proceedings

• Formation of III-V Semiconductor Engineered Substrates Using Smart CutTM Layer Transfer Technology
Fabrice Letertre, in Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates, edited by A. Dadgar, T. Li, M. Mastro, E.L. Piner, and J. Redwing (Mater. Res. Soc. Symp. Proc. Volume 1068, Warrendale, PA, 2008).

• Direct Growth of III-V Devices on Silicon
Katherine Herrick, Thomas Kazior, Amy Liu, Dmitri I. Loubychev, Joel M. Fastenau, Miguel Urteaga, Eugene A. Fitzgerald, Mayank T. Bulsara, David Clark, Berinder Brar, Wonill Ha, Joshua Bergman, Nicolas Daval, and Jeffrey LaRoche, in Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates, edited by A. Dadgar, T. Li, M. Mastro, E.L. Piner, and J. Redwing (Mater. Res. Soc. Symp. Proc. Volume 1068, Warrendale, PA, 2008).

• Layer Transfer with Implant-Induced Defects: A Path to Advanced Engineered Substrates
K. K. Bourdelle, Proceedings 17th Intern. Conf. on Ion Implantation Technology, Monterey, CA, June 8-13, 2008.

• Evolution of end-of-range defects in silicon-on-insulator substrates
P. F. Fazzini, F. Cristiano, C. Dupré, S. Paul, T. Ernst, H. Kheyrandish, K. K. Bourdelle, and W. Lerch, Proceedings Spring EMRS 2008 meeting (Symp. I), Materials Science and Engineering B.

• Novel trends in SOI: UTBOX SOI and direct silicon bonding technologies
Oleg Kononchuk and Frederic Allibert, Proceedings of 5th International Symposium on Advanced Science and Processing of Silicon Materials, (Kona, Hawaii Nov. 14, 2008).

• Fundamentals of Wafer Bonding for SOI: From Physical Mechanisms Towards Advanced Modeling
Ionut Radu, Alice Boussagol, Alexandre Barthelemy and Sebastien Vincent, ECS Transactions, Volume 16, Issue 8 pp. 349-360 (2008) – 214th ECS Meeting, October 12 – October 17, 2008, Honolulu, HI.

• Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology
Diefeng Gu, Helmut Baumgart, Konstantin. K. Bourdelle, George Celler, and A. A. Elmustafa, ECS Transactions, Volume 16, Issue 8, pp. 385-391 (2008) – 214th ECS Meeting, October 12 – October 17, 2008, Honolulu, HI.

• Strain Relaxation in Patterned Strained Si-on-Insulator (sSOI) by Raman Spectroscopy
Diefeng Gu, Helmut Baumgart, Mingyao Zhu, George Celler, ECS Transactions, Volume 16, Issue 8, pp. 329-335 (2008) – 214th ECS Meeting, October 12 – October 17, 2008, Honolulu, HI.

• Tuning the electrostatic properties of Silicon-on-Insulating Multilayer (SOIM) Structures
M. Kostrzewa, T. Q. Nguyen, J.-P. Mazellier, Ch.Deguet, L. Clavelier, K. Landry, S. Cristoloveanu, Volume 16, Issue 8, pp. 187-194 (2008) – 214th ECS Meeting, October 12 – October 17, 2008, Honolulu, HI.

• Engineering Substrates for 3D Integration of III-V and CMOS
K.J. Herrick, T. E. Kazior, J. Laroche, A. W. K. Liu, D. Lubyshev, J. M. Fastenau, M. Urteaga, W. Ha, J. Bergman, B. Brar, M. T. Bulsara, E. A. Fitzgerald, D. Clark, D. Smith, R.F. Thompson, N. Daval, G. K. Celler, ECS Transactions, Volume 16, Issue 8, pp. 227-234 (2008) – 214th ECS Meeting, October 12 – October 17, 2008, Honolulu, HI.

• Monolithic III-V/Si Integration
E. A. Fitzgerald, M. T. Bulsara, Y.Bai, C. Cheng, W. K. Liu, D. Lubyshev, J. M. Fastenau, Y. Wu, M. Urteaga, W. Ha, J. Bergman, B. Brar, C. Drazek, N. Daval, F. Letertre, W. E. Hoke, J. R. LaRoche, K. J. Herrick, and T. E. Kazior, ECS Transactions, Volume 16, Issue 10, pp. 1015-1020 (2008) – 214th ECS Meeting, October 12 – October 17, 2008, Honolulu, HI.

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