EuroSOI 2009
Posted date : May 27, 2009

http://chalmers2009.eurosoi.org/

Chalmers University, Sweden, January 2009

EuroSOI is an international forum to promote interaction and exchanges between research groups and industrial partners involved in SOI activities all over the world.

• SOI vs. Bulk.Si nanoscale FinFET’s. (Invited)  J. G. Fossum, et al. (U. Florida/Gainesville, Applied Novel Devices, Soitec)
• Platforms for planar & non-planar ultrathin silicon. M. Schmidt, et al. (AMO, RWTH)
• Junctionless MuGFETS. C.-W. Lee, et al. (Tyndall)
• Strain induced enhancement of transconductance in Si-nanowire transistors fabricated by pattern dependent oxidation. D. Kosemura1, et al. (Meiji U., Waseda U.)
• Floating-Body-Effect-Related Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device. H. J. Hung1, et al. (National Taiwan U., UMC)
• Thin film devices for low power applications. (Invited)  S.Monfray, et al. (STMicroelectronics, Leti)
• Ultra-thin body and BOX SOI roadmap for low power and low VT-variability MOSFETs. P. Scheiblin, et al. (Leti, Soitec)
• Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX. T. Rudenko, et al.  (NAS/Ukraine, UCL, Leti, Soitec)