National’s VIP50 on SOI
Posted date : Jul 30, 2009

National Semiconductor is building products such as single, dual and quad operational amplifiers on its proprietary VIP50 SOI BiCMOS process technology.

As Greg Cestra, senior engineering manager with National Semiconductor’s Advanced Process and Technology Division told ASN, “Transistor elements in several of National Semiconductor’s advanced processes are implemented on an SOI wafer with trench isolation. This minimizes parasitic capacitances and greatly improves bandwidth-to-power ratios. The advanced isolation process allows transistors to condition signal voltages beyond the supply rails. SOI also eliminates the effects of leakage currents that limit performance at the extremely high temperatures used in a number of industrial and automotive applications.

National Semiconductor’s op amps based on its SOI-enabled VIP50 process feature dramatic improvements in accuracy, power consumption and voltage noise for industrial, medical and automotive applications, as well as small size for portable applications. EDN Magazine’s readers and editors selected National’s VIP50 process and products from a field of hundreds as analog innovation of the year in its 16th Annual EDN Innovation Awards. (Courtesy: National Semiconductor)

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