Publications
Posted date : Dec 4, 2009

• Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability
  X. Garros, et al.  (Leti, Soitec) J. Appl. Phys. 105, 114508 (2009).
• Elastic relaxation in patterned and implanted strained silicon on insulator
  S. Baudot, et al.  (CEA-CNRS, Leti) J. Appl. Phys. 105, 114302 (2009)
• Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates
  C. Figuet and O. Kononchuk. (Soitec) Thin Solid Films. 13 October 2009.