Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability
X. Garros, et al. (Leti, Soitec) J. Appl. Phys. 105, 114508 (2009).
Elastic relaxation in patterned and implanted strained silicon on insulator
S. Baudot, et al. (CEA-CNRS, Leti) J. Appl. Phys. 105, 114302 (2009)
Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates
C. Figuet and O. Kononchuk. (Soitec) Thin Solid Films. 13 October 2009.
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