Posted date : Dec 4, 2009

  • Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability
    X. Garros, et al.  (Leti, Soitec) J. Appl. Phys. 105, 114508 (2009).
  • Elastic relaxation in patterned and implanted strained silicon on insulator
    S. Baudot, et al.  (CEA-CNRS, Leti) J. Appl. Phys. 105, 114302 (2009)
  • Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates
    C. Figuet and O. Kononchuk. (Soitec) Thin Solid Films. 13 October 2009.

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