WaferBond ’09
Posted date : Dec 4, 2009

6-8 December 2009 – Grenoble, France


  • Ultrathin SOI as a platform for nanostructures
    H.C. Floresca (U. Texas)
  • Wafer Level 3D Integration of ICs using the temporary and direct bonding and back side thinning
    B. Charlet (Leti)
  • Evolution of polysilicon morphology after direct wafer bonding in PSOI Application
    R. Feilleux (Soitec)
  • Thin single crystal layers of LiTaO3 and LiNbO3 obtained by the Smart Cut™ technology for next generation of innovative substrates
    J.-S. Moulet (Soitec)

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