Four researchers from STMicroelectronics and Leti have received the 2012 Général Ferrié Award
Posted date : Dec 10, 2012

ST FDSOI team

(from left to right) Stéphane Monfray and Frédéric Bœuf (ST), and Claire Fenouillet-Béranger and Olivier Faynot (Leti) are the recipients of the 2012 Général Ferrié Award, the highest award in electronics R&D in France, for their work on FD-SOI.

For their work on FD-SOI, four researchers from STMicroelectronics and Leti have received the 2012 Général Ferrié Award, considered the highest award in electronics R&D in France.  Claire Fenouillet-Béranger and Olivier Faynot from Leti, and Stéphane Monfray and Frédéric Bœuf from ST are credited with validating the technological choice for FD-SOI, while also enabling its industrialization.  They identified three key FD-SOI advantages:

– the production process is very close to bulk
– porting circuits from bulk to FD-SOI technology is significantly easier than porting to FinFETs
– the technology is very attractive for mobile applications such as smartphones and tablets, which simultaneously require high performance and low power consumption.

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