Advanced substrate leader Soitec and Intelligent Epitaxy Technology, Inc. (IntelliEPI, Taiwan) a leader in InP, GaAs, and GaSb epi wafers, have signed a collaborative agreement to better serve the GaAs market (press release here).
“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers ,” said Bernard Aspar, Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.
“This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec’s customers supply-chain security,” said Yung-Chung Kao, IntelliEPI President and CEO.
Gallium arsenide (GaAs), a III-V semiconductor, is used in the manufacture of devices such as microwave frequency ICs, monolithic microwave ICs, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.
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