Samsung’s Senior Director Foundry Marketing Kelvin Low blogged enthusiastically about the recent Samsung-STMicroelectronics FD-SOI announcement on the company’s website. He has graciously agreed to let ASN repost it here – and says we’ll be hearing more from him in the future.
Without further ado, here’s what he said:
While 14nm FinFET is the darling of the foundry industry at the moment, 28nm is the process node that everyone agrees will be used for many years to come for a wide variety of application designs. Since 28nm will be long-lived, Samsung Foundry is taking steps to broaden its 28nm portfolio offering.
Today, Samsung entered into strategic agreement with ST Micro to license ST’s 28nm fully-depleted silicon-on-insulator (FD-SOI). See full release below. This agreement is another example of Samsung collaborating with strategic partners to offer customers leading-edge process technology with multi-source availability. In this case, Samsung is able to run high-volume 28nm FD-SOI in its 300mm fabs in Korea to complement ST’s fab in France.
FD-SOI is one of those unique technologies that allows for the continuation of Moore’s Law with an upgrade to traditional planar semiconductor process technology. This particular version of FD-SOI delivers a nice balance of higher performance with low power and is well suited for mobile and consumer electronics to IT infrastructure applications.
Are you considering a new SoC design with 28nm FD-SOI? If so, we’d like to hear from you.
He then followed with a reposting of the press release, (you can see his whole blog on the Samsung website here.)
So there it is: Samsung is truly bullish on FD-SOI. This is excellent news for the greater FD-SOI ecosystem – and for the entire design community.
To borrow a line from Bogart in the classic Casablanca, “I think this is the beginning of a beautiful friendship.”
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