Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the aegis of a French government funded program for “…the development of magnetic RAM and resistive RAM embedded memory options for the 28nm fully-depleted silicon-on-insulator (FDSOI) manufacturing process and subsequent generations.” MCU tape-out is scheduled for the end of 2014.
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