At the recent FD-SOI Forum in Shanghai, the IoT (Internet of Things) was the #1 topic in all the presentations.
The event was sponsored by the SOI Consortium, the Shanghai Institute of Microsystem and Information Technology / Chinese Academy of Sciences (SIMIT/CAS), and VeriSilicon. By all accounts it was a great success. Speakers included experts from Synopsys, ST, GF, Soitec, IBS, Synapse Design, VeriSilicon, Wave Semi and IBM (see below for key slides and links to the full presentations). The goal was to gather IC industry decision makers, technology owners, opinion leaders and market analysts to exchange and assess the opportunities that FD-SOI technology brings in terms of ultra-low power operation at high performance for mobile and IoT.
Here are some of the points made by the speakers:
We know that FD-SOI 28nm has moved into the manufacturing and volume production phase. It offers the chip industry the unique features of being able to fabricate at competitive cost, ultra low power, high speed ICs. It is a game changer technology platform that brings new powerful elements to the designers and a strong differentiation potential at IC and system level. But the speakers acknowledged that challenges remain, in particular that there’s a need for a greater commitment from industry and for very big customers (but that’s going to change).
Here are brief summaries of the presentations. Click on the presentation names to download the full pdfs, or on the slides for enlarged images.
Market Overview and Opportunities by Handel Jones, CEO, International Business Strategies
Starting from a bird’s-eye view of the world, this presentation then zooms down deep into the nitty-gritty of chip manufacturing costs. Considering the various technology options for current and future nodes, it looks at costs per gate and per wafer, costs for design and for tooling, yield impact and fab life. The world’s largest chip consumer, China currently imports about 90% of the chips used there. The government has targeted 2020 as the year by which Chinese semiconductor companies should be supplying 40% of semiconductors consumed in China. IBS sees FD-SOI as the most astute choice, especially for IoT.
FD-SOI Technology by Laurent Remont, VP Technology & Product Strategy, STMicroelectronics
This presentation gives an overview of FD-SOI technology, roadmaps and markets. One of the points made is that 28nm will be the longest process generation with the highest volume manufacturing. FD-SOI extends the 28nm offering with improved power and performance rivaling existing 20nm bulk.
Design with FD-SOI, Innovation Through Collaboration by Marco Casale-Rossi, Product Marketing Manager, Synopsys
The Synopsys presentation detailed FD-SOI/EDA readiness, with illustrations from an ST design. Among the many impressive results, time-to-good-floorplan was reduced 10x, and leakage was reduced by 59% through advanced EDA in the flow.
Designing with FD-SOI for Power Efficiency by Haoran Wang, Associate General Manager, Synapse Design China
Synapse Design is an industry leader in design services for most top tier semiconductor and system companies around the world. They have been working on designs in FD-SOI for over four years. In fact, they’ve already had four tapeouts in FD-SOI and are working on three others. The presentation noted that “…FD-SOI has more degrees of freedom than bulk” conferred by device physics. They recommend starting with a deep power analysis at RTL, looking carefully at performance requirements vs. battery life. They conclude, “At 28nm, FDSOI does show the benefits of speed/power advantage. It is a viable solution from technology point of view and easy to be integrated in current design flow.”
Leveraging FD-SOI to Achieve Both Low Power AND High Speed by Pete Fowley, CEO, Wave Semiconductors
Wave is a fabless semiconductor startup “commercializing a programmable solution addressing power, concurrency, design time, design cost, and deep submicron challenges facing the semiconductor market.” The founders come from a veritable who’s who industry background* (the CEO was one of the first members of Apple’s original Mac chip design team). They bill their FD-SOI based Wave Threshold Logic (WTL) as their “secret sauce”. WTL can use both very fast flip-well LVT devices with Forward Body Bias (FBB) and Standard VT devices that have very low leakage through very high Reverse Body Bias (RBB). According to Wave, “WTL‐ BB represents a unique differentiator for FD‐SOI: enabling significant performance and power advantages over bulk processes. This strategic advantage will persist into deeper nodes.” Clearly one to watch!
The FD-SOI Technology for Energy Efficient SoCs by Giorgio Cesana, Director of Marketing, STMicroelectronics
Here ST gives a FD-SOI primer, explaining the technology, design considerations and Forward Body Bias (FBB) use and results. Examples from both fast CPU/GPU and ultra-low power designs are given.
SOI Ecosystem – Strategic Opportunity for China by Tom Reeves, VP Technology Alliance, IBM
The SOI ecosystem is a central theme in this presentation. It has a long history of producing successful ICs, and the SOI enabled device structure pipeline continues through 7nm. IBM sees big opportunities for China in mobile, automotive, industrial, IoT, wearable and other More-than-Moore apps. The call to action is clear: now is the time for China to accelerate the building of its SOI ecosystem.
Foundry Business Opportunities by Paul Colestock, Sr. Director of Segment Marketing, GlobalFoundries has not yet been posted as of this writing. But keep checking back – it should be there soon.
Also, look for another ASN post on the Shanghai 2014 RF-SOI Workshop coming up shortly.
Special thanks to the folks at the SOI Consortium for their help in compiling details for this piece.
* A tip of the hat to Eric Esteve at Semiwiki for first pointing this out in his recent piece on Wave Semi’s technology, which you can read here.