Samsung Announces Next FD-SOI Node: 18nm
Posted date : May 28, 2017

Big News: Samsung has officially revealed that their next FD-SOI node is 18nm.  The announcement was made at the recent Samsung Foundry Forum, which showcased a number of new technologies that the company says will help enable the development of new devices connecting consumers in entirely new ways. (You can read the full press release here.)

Samsung also announced new features for its 28nm FD-SOI offering, which is called 28FDS. Noting that it is well suited for IoT applications, Samsung said it will gradually expand its 28FDS technology into a broader platform offering by incorporating RF and eMRAM(embedded Magnetic RAM) options.

18FDS is the next generation node on Samsung’s FD-SOI roadmap with enhanced PPA (Power/Performance/Area).

Kinam Kim, President of Samsung Electronics’ Semiconductor Business, introduces the company’s newest foundry process technologies and solutions. (Courtesy: Samsung)

The FD-SOI news was part of an announcement covering Samsung’s newest process technology roadmap.

“The ubiquitous nature of smart, connected machines and everyday consumer devices signals the beginning of the next industrial revolution,” said Jong Shik Yoon, Executive Vice President of the Foundry Business at Samsung Electronics. “To successfully compete in today’s fast-paced business environment, our customers need a foundry partner with a comprehensive roadmap at the advanced process nodes to achieve their business goals and objectives.”

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