RF-SOI innovators Jean-Pierre Raskin of UCL and Bernard Aspar of Soitec changed the course for key RF chips. The industry has long recognized their contributions: their solution for “trap-rich” RF-SOI wafers is now the starting point to virtually every FEM in every smart phone on the planet (really!). And of course here at ASN we’ve been following their work for over a decade. Now more accolades are coming in.
The latest is the 2017 European SEMI Award, which was given at ISS Europe 2018 for “…their seminal work with radio frequency silicon-on-insulator (RF-SOI) substrates” (read the press release here). As SEMI notes, the “…award winners’ pioneering research and collaboration with academia and industry led to major advances in RF switches and ushered RF-SOI technology from concept to worldwide adoption.” Aspar and Raskin were nominated and selected by their peers within the international semiconductor community.
Their advanced RF-SOI technology is now behind a wide range of applications and systems in areas including mobile devices, satellite communications, IoT, automotive radar and aerospace.
If you want to better understand all this, a few years ago UCL and Soitec teams contributed an excellent article to ASN. It clearly explains how and why these new substrates came to be. You can still read it here. (Or if you’re still a little confused about RF-SOI vs. RF on FD-SOI, here’s a piece we did back in 2015 that explains the basics.)