AMD’s Momentum Building
Posted date : Jul 11, 2005

SOI-based products help win new customers. AMD, a long-time favorite of discerning PC buyers, is now the undisputed leader

SOI and sSOI Address MPU Clock Speed Challenge
Posted date : Jul 11, 2005

IC makers need both local and global strained SOI to win the GHz race. At the device level, the switching speed of MOS

On the Smart Cut™ Frontier
Posted date : Jul 11, 2005

The inventor of Smart Cut technology, Dr. Bruel reflects on its impact for the industry. I knew a time when it was very common to e

Strain and SOI Lead to Faster, Cooler Transistors
Posted date : Jul 11, 2005

Applied Materials responds to evolving requirements. Prior to 65nm device manufacturing, performance improvements from

MEDEA+ 2T101: sSOI for High-Performance ICs
Posted date : Jul 11, 2005

The objective is to provide an industrial source of large diameter strained SOI wafers within 3 years. A “Phase 2” MEDEA+ project,

OPTIMUM
Posted date : Jul 11, 2005

Financing approved for new III-V program The first phase of OPTIMUM, a new III-V research project lead by Thales

EE Times Awards AMD, Cites SOI Innovation
Posted date : Jul 11, 2005

Ruiz and AMD are among the first ACE winners. At the first Annual Creativity in Electronics (ACE) Awards, EE Times cel

New Edition of SOI Book by J.-P. Colinge
Posted date : Jul 11, 2005

Silicon-on-Insulator Technology: Materials to VLSI is now available from Springer. The third edition of Professor Jean-Pierre Colin

STRAINED SOI
Posted date : Jul 11, 2005

APRIL 2005 - FREESCALE AND SOITEC ACHIEVE 70- PERCENT IMPROVEMENT IN ELECTRON MOBILITY USING

Strained SOI engineered devices and FinFETS (including modified structures such as Multiple Gate FETs (MUGFETS) and Tri-Gates) are among the hottest research topics. Here are some highlights built on SOI or strained SOI substrates.
Posted date : Jul 11, 2005

From the June 2006 Symposium on VLSI Technology: High-performance Tri-Gate Demonstrated (by J.Kavalieros et al., Abstract p.62) Intel presen