Category Archive Issues

The Transition to Fully Depleted
Posted date : Dec 12, 2012

The SOI Industry Consortium is actively engaged in supporting the industry’s transition to fully-depleted (FD) technologies. FD technologies o

IBM: Why Fin-on-Oxide (FOx/SOI) Is Well-Positioned to Deliver Optimal FinFET Value
Posted date : Nov 30, 2012

FinFET technology promises continued scaling of CMOS technology via the potential to reduce (deleterious) short- channel effects. Realization of

Which wafers for energy-efficient, fully-depleted transistor technologies?
Posted date : Nov 21, 2012

To drive the competitiveness of PCs, smartphones and other leading-edge devices, the electronics industry has relied for decades on the continued

IBS Study Concludes FD-SOI Most Cost-Effective Technology Choice at 28nm and 20nm
Posted date : Nov 9, 2012

In a recent study entitled Economic Impact of the Technology Choices at 28nm/20nm, International Business Strategies (IBS) has found that those c

Go Ahead – Take 28nm FD-SOI Out for a Test Drive
Posted date : Oct 31, 2012

CMP is offering multi-project wafer runs of ST's 28nm FD-SOI technology on Soitec wafers with Leti models. It's the same technology that GF will

Wafer Leaders Extend Basis for Global SOI Supply
Posted date : Oct 10, 2012

It's a bright green light from the world leaders in SOI wafer capacity. Soitec, the world leader in SOI wafer production, and long-time partner

EXCLUSIVE ASN INTERVIEW: ST’s Jean-Marc Chery on FD-SOI Manufacturing
Posted date : Oct 1, 2012

In the spring of 2012, STMicroelectronics announced the company would be manufacturing ST-Ericsson’s next-generation (and very successful) Nova

Consortium Website – What’s New
Posted date : May 2, 2012

Presentations At the SOI Consortium’s 6th FD-SOI workshop (held just after ISSCC), excellent talks were given by STMicroelectronics, IBM, ARM,

FD-SOI – A Look at Consortium Benchmarking Results
Posted date : May 2, 2012

STMicroelectronics, IBM, ARM, GLOBALFOUNDRIES, Soitec and other leading semiconductor companies in the SOI Consortium recently participated in a

Leti: Adding Strain to FD-SOI for 20nm and Beyond
Posted date : Apr 30, 2012

Work at Leti shows that strain is an effective booster for high-performance at future nodes. The outstanding electrostatic performance already r