• In conjunction with Renesas, Hitachi has developed a new SOI transistor which it says improves s
IBM is reaping the benefits of its long SOI history.
In 1998, IBM announced that after years of research, it had “pe
IC makers need both local and global strained SOI to win the GHz race.
At the device level, the switching speed of MOS
APRIL 2005 - FREESCALE AND SOITEC ACHIEVE 70- PERCENT IMPROVEMENT IN ELECTRON MOBILITY USING
STMicroelectronics recently delivered a 65-nm CMOS SoC design platform for development of ne
When an RF chip is built on a bulk silicon substrate, the semiconducting properties of the silicon induce RF signal loss in the substrate. These
SOI CMOS processes using partially-depleted transistors, most commonly used in current advanced SOI processes (90nm and 65nm nodes), have already
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