Tag Archive high-perf

FD-SOI, Body-Biasing Shine in 10x Faster DSP With Ultra-Wide Voltage Range
Posted date : Feb 20, 2014

Body-biasing design techniques, uniquely available in FD-SOI, have allowed STMicroelectronics and CEA-Leti to demonstrate a DSP that runs 10x fas

New FD-SOI Presentation by ST on Design & Reuse Looks at Cost, IP
Posted date : Nov 18, 2013

Design & Reuse has posted an excellent presentation by Giorgio Cesana of ST entitled FD-SOI Technology for Energy Efficient SoCs: IP Developm

AMD’s second generation A-Series Accelerated Processing Units is now available in retail and distribution channels
Posted date : Oct 9, 2012

Based again on 32nm SOI, AMD's second generation A-Series Accelerated Processing Units (APUs) (formerly codenamed “Trinity”) for mainstream a

EXCLUSIVE ASN INTERVIEW: ST’s Jean-Marc Chery on FD-SOI Manufacturing
Posted date : Oct 1, 2012

In the spring of 2012, STMicroelectronics announced the company would be manufacturing ST-Ericsson’s next-generation (and very successful) Nova

Roundup: FD-SOI & Ecosystem Shine at Semicon West
Posted date : Jul 16, 2012

A major highlight at this year's Semicon West in San Francisco was a panel discussion by industry thought-leaders gathered to discuss the current

GlobalFoundries to Fab 28/20nm FD-SOI Chips for ST; ST Technology Open to Other GF Customers
Posted date : Jun 13, 2012

Two big pieces of news have just been announced by STMicroelectronics: to supplement in-house production at Crolles, the company has tapped G

NovaThor SmartPhone Chip on 28nm FD-SOI: ST-Ericsson Blogger Tells All; PC Mag Sees Light
Posted date : May 30, 2012

To paraphrase the song, “What a difference a day would make.”  Searching to plug into the nearest power strip each afternoon, active smartph

Leti: Adding Strain to FD-SOI for 20nm and Beyond
Posted date : Apr 30, 2012

Work at Leti shows that strain is an effective booster for high-performance at future nodes. The outstanding electrostatic performance already r

ST White Paper Excerpts: Planar Fully-Depleted Silicon Technology to Design Competitive SOCs at 28nm and Beyond
Posted date : Apr 24, 2012

STMicroelectronics recently issued a major white paper detailing the choice of FD-SOI for consumer SOCs at 28nm and beyond. This article excerpts

Chenming Hu: SOI Can Empower New Transistors to 10nm and beyond
Posted date : Apr 23, 2012

FinFET and FD-SOI transistors look different but share a common principal that allows MOSFETs to be scalable to 10nm gate length. The good, old