Tag Archive III-V

Two additions to Altatech equipment lines: 10x faster ultra-thin film deposition; Doppler nano-defect inspection captures true sizing and positioning
Posted date : Dec 8, 2014

The Orion Lightspeed™ inspection system by Altatech (a division of Soitec) pinpoints the true size and location of nano-scale defects inside c

IntelliEPI Buys Soitec GaAs Business
Posted date : Nov 3, 2014

Soitec, a leader in SOI wafers and other advanced substrates, recently announced the sale of its gallium arsenide (GaAs) epitaxy business (the So

The SOI Papers at VLSI ’14 (Part 2):
Posted date : Jul 17, 2014

Last week we posted Part 1 of our round-up of SOI papers at the VLSI Symposia – which included the paper showing that 14nm FD-SOI should match

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers
Posted date : Dec 19, 2013

SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM '13.  Last week we covered the FD-SOI papers (click here

Soitec, IntelliEPI Sign Agreement on GaAs Wafers, Supply Chain
Posted date : Dec 16, 2013

Advanced substrate leader Soitec and Intelligent Epitaxy Technology, Inc. (IntelliEPI, Taiwan) a leader in InP, GaAs, and GaSb epi wafers, have s

IP Value Starts at the Substrate Level
Posted date : Oct 19, 2013

If you say “IP” in the chip business, everyone thinks of cores and design. But in fact, the importance of intellectual property for chips can

Which wafers for energy-efficient, fully-depleted transistor technologies?
Posted date : Nov 21, 2012

To drive the competitiveness of PCs, smartphones and other leading-edge devices, the electronics industry has relied for decades on the continued

Industry’s First InP-based HBT on Silicon
Posted date : Jul 16, 2008

Advanced engineered substrates are a key to the Raytheon-led DARPA COSMOS project to integrate compound semiconductors and silicon CMOS on a si

KORRIGAN Initiative Federates European GaN Efforts
Posted date : Jul 11, 2006

Systems houses and research labs from seven European nations are working together on GaN HEMT technology for critical defense appl

Posted date : Jul 11, 2005

Financing approved for new III-V program The first phase of OPTIMUM, a new III-V research project lead by Thales