Tag Archive Leti

€103M OCEAN12 Project for Automotive/Aeronautic FD-SOI in Europe (Interview)

ASN had a chance to talk to François Brunier of Soitec, who’s leading this important project.

Advanced Substrate News (ASN): Can you tell us briefly about OCEAN12?

Francois Brunier (FB): OCEAN12 stands for Opportunity to Carry European Autonomous driviNg further with FD-SOI technology up to the 12nm node.

Francois Brunier, Partnership Program Manager, Soitec.

OCEAN12 deals with “Ultra-low power computing solutions for automotive and aeronautics using all the range of FDSOI technologies”. This project with a budget of 103M€ brings together 27 partners from 7 different countries. The project received the ECSEL JU* label under the 2017 call.  ECSEL is an EU-driven public-private partnership enabling the co-financing of innovation in electronic components and systems both by Member States and the European Union.

ASN: Why is this project needed?

FB: As of today a car has around 500 million transistors. These electronic components represent already an important vector of valorization and differentiation for the automotive industry and for the consumer. The increased autonomy of the vehicles will require a very strong build-up of computational capacities. 50 to 100 times more transistors could be required for a level 5 (fully autonomous car). Following this trend an autonomous car will require power consumption equivalent to 50 to 100 computers running continuously (without taking into account the car propulsion).

The OCEAN12 partners.

The power consumption of these components becomes a key element in the choice of technologies. We believe that our technologies on SOI present the best assets to meet this challenge.

The FD-SOI substrates, technologies and designs developed in OCEAN12 offer a palate of different solutions to this challenge: increased performance for data processing (including Artificial Intelligence); much higher energetic efficiency; and smaller form factors to fit in embedded systems like autonomous cars with higher integration and reliability, and enabling safe connectivity.

The OCEAN12 project will demonstrate that SOI technologies are able to meet these challenges through relevant demonstrators in the targeted fields.

ASN: What are the project goals?

FB: OCEAN12 will bring concrete solutions to the main challenges of smart connectivity and low power consumption in the automotive industry.

As such, OCEAN12 will build awareness around the key enabling technologies in substrate development, transistor behavior, and the design and fabrication of integrated circuits up to the system and end-user application levels. We will show that the technology is advantageous for automotive and aerospace applications, which are strategic sectors for Europe. Having the whole supply chain in Europe means having trusted and secured components made in Europe.

The OCEAN12 project goals stand on three pillars:

First: Confirming the technology foundation. Ocean12 puts the FD-SOI substrate and device developers in direct contact with the full value chain of suppliers and end users. This gives the entire ecosystem visibility into current and future needs, and ensures that substrate and device solutions are both technically feasible and correctly aligned with actual system requirements.

Second: Creating concrete, innovative demonstrators in automotive (Audi, Bosch) and aeronautics (Airbus, Thales). These demonstrators are a first step in defining the context and environment to prove the advantages of these technologies in real application cases, showing they are useful and as such prefigure a final system and a potential future product roadmap. Demonstrators should be as close as possible to the final application.

Third: Broadening the design ecosystem, with the big companies, the small- and medium-sized companies (SMEs) and the research organizations (universities, RTOs). We have a critical mass of 16 design ecosystem partners focusing their efforts on FD-SOI. The project leverages that dynamic FD-SOI design ecosystem for IC product migration to FD-SOI and the creation of new IP. Inventing the future components in Europe is also key.

ASN: Can you tell us more about the demonstrators? When will we see them?

FB: There are four demonstrators. All these demonstrators will be delivered by the end of the project in 2021:

Always-on wake-up systems (Audi, Bosch, Leti). With such a system we can imagine an application to monitor our car when it is parked in a parking lot for a long time. The sensors would remain aware of everything that goes on around the car. Based on sensor observations, the car can make decisions on further actions to take. This can be used in many future car applications like intrusion detection or vehicle access systems. But you will not have to worry about battery drain: even though all the sensors are always on, they go right back into a very low-power sleep mode thanks to FD-SOI technology.

mm-Wave integrated radar SOCs (Bosch and Audi), which will benefit from all the innovations of FD-SOI thanks to its low consumption properties, but also the optimization of the sensors. The performance gain is made over the entire system with adaptations between analog and logic.

High-performance video processor for aeronautics. (Airbus, Thales, Kalray). Kalray, a French SME working on Massively Parallel Processor Arrays (MPPA) aims to demonstrate an ultra-low power, low-cost, high-performance neural processor on FD-SOI technology. This demonstrator would be key for Airbus and drones with high-performance, low-power cameras. Airbus and Audi have partnered on air and ground mobility services.

Microcontroller plug-and-play board. This demonstrator lead by ST will allow for the development of new solutions in the domain of GNSS/GPS.

ASN: Can you tell us more about the partners?

FB: The OCEAN12 consortium of 27 partners involves 8 large groups, 9 SMEs and 10 universities/RTOs. These partners come from 7 different European countries.

The eight large groups include: Soitec, the world’s leading provider of FD-SOI substrates; EVG, a leading global equipment supplier; GlobalFoundries and STMicroelectronics, the two major European FD-SOI foundries; and Bosch, as a Tier 1 automotive supplier. At the top of the value chain, high-end European automotive manufacturer Audi, the avionics industrial giant Airbus, and Thales for security issues, will develop product demonstrations.

Ten highest-level research institutes support the industrial consortium. They include CEA-Leti (FR), Fraunhofer(GE), IMS (FR), INP Grenoble (FR), TU Dresden (GE), U. Paderborn (GE), Bundeswehr U. Munich (GE), Eberhard Karls U. Tübingen (GE), Instituto de Telecomunicações (PT), and Warsaw UT (PL). They increase the competitiveness through technological innovation and transfer of technical know-how while gaining new expertise working with global leaders.

In addition, OCEAN 12 has a very strong SME consortium covering the supply chain in the fields of new equipment, IP, system integration and fabless companies. They include: IBSUnitySC (HSEB), MunEDAKalrayAED EngineeringISD, EVOTEL, M3 Systems and Design&Reuse.

All these partners have longstanding experience of cooperation in various national and international frameworks and are specialists in their fields of activity. Their contributions are essential for the success of the project.

ASN: What is the timetable?

The OCEAN12 kick-off event at Soitec’s headquarters near Grenoble.

FB: The project started on April 1st 2018. The kick off with all the partners was held at Soitec on 29 September 2018. It was a great success. The project runs through December 2021, by which point everything has to be demonstrated.

ASN: Can you clarify the funding structure?

FB: The budget is about €103.6M. If the project succeeds, we get European Commission funding. In that case, just over 20% of the eligible cost – about €23M – is subsidized at the European level. The seven countries with companies or organizations participating in the project will then roughly match the European subsidies, contributing about €27M.

These ECSEL-type public-private projects are a tried and true model in Europe, maximizing synergy across ecosystems.

To conclude, in the name of the consortium I’d like to thank the ECSEL JU, the European Commission and our National Funding Agencies from France (DGE), Germany, Portugal, Greece, Spain, Austria and Poland. Such a project would not exist without them.

______

*ECSEL JU: Electronic Components and Systems for European Leadership Joint Undertaking

SOI Consortium Events Around the World This Fall – Mark Your Calendars

2019 will be a busy fall for the SOI Consortium and our members.

First off are the SOI Consortium events in Shanghai and Tokyo, which are very popular indeed. We now have the dates & locations locked in, so you’ll want to mark your calendars:

The SOI Consortium and members will also be giving talks at Semicon Europa, which is being held 13 – 15 November 2019 in Munich, Germany.

The programs are currently being finalized. As soon as they’re ready, we’ll be sure to let you know so you can register and/or share the news with your colleagues and clients. But in the meantime, make sure you save the dates.

Would you like to check out the presentations given at Consortium events in previous years? If you hover your cursor over the Events tab at the top of our home page, you’ll get a drop-down menu of events for the last five years (we’re working on adding more – we’ve been doing these events for over a decade!). Click through to any past event and you’ll land on a page where you can download most of the presentations that were given there. Of if you’re looking for past presentations given by any particular company, use the search engine at the bottom of any page on our website.

S3S

You’ll also find many of our members at the IEEE/EDS S3S Conference in San Jose, CA, October 14 – 19th. S3S (formerly known as The SOI Conference) has been running in various forms for over 30 years. They always have an excellent line-up of speakers, plus it’s a great opportunity for networking with researchers from across the worldwide SOI ecosystem. BTW, while the deadline for general paper selection has already closed, papers of exceptional merit are currently being accepted for their Late News Sessions. See the 2019 Call for Papers for more information – those Late News papers need to be received by 23 August 2019 for consideration.

Also, IEEE S3S Conference will once again host a full-day short course and a half day tutorial. These are very popular. The short course this year will be on SOI Design and Technology for Analog and Mixed Signal. As of this writing, the program is still being finalized, but more will be announced in the next few weeks, so check back on their website soon for updated information.

Member Events

And finally, don’t forget to learn more about the offerings from and in support of the SOI ecosystem at our members’ events around the globe, including:

GlobalFoundries – GTC | Samsung Foundry – SFF | ST – Technology Tour | Synopsys – SNUG | Cadence – CDNLive | Silvaco – SURGE | Arm – TechCon | NXP – Tech Days | Leti – Events | imec –Events |

Register Now! Our Semicon West Workshop – IoT & the SOI Supply Chain

If you’re going to Semicon West this year, be sure to attend the SOI Consortium’s workshop on how IoT is driving the SOI supply chain. There’s a great line-up of speakers – see the program below.

IoT means many things to many people but everyone agrees it’s here and growing quickly. IoT, including machine learning and movement to the edge, is fueling innovation as the high compute and ultra-low energy requirements are pushing technology to deliver on these needs. The well-known characteristics defining IoT of “Sense”, “Compute”, and “Act” put additional burden on technology to full these requirements across a variety of use cases and environments without sacrificing reliability or quality.

All the various forms of SOI technology from FD-SOI to High-Voltage to RF-SOI, are uniquely situated to deliver on the promise of today’s as well as tomorrow’s IoT roadmap. The supply chain for all forms of SOI technology is in place. This workshop will discuss the current and future solutions from a supply chain perspective.

Speakers include experts from SOI Consortium members Applied Materials, NXP, GlobalFoundries and Soitec.

Entitled The Internet of Things, Driver of the SOI Supply Chain, the workshop will take place at the Moscone Center South, Wednesday July 10th in Room 301. It will run from 1 pm until 4:30 pm. Anyone and everyone who is registered for Semicon West is welcome. Here is the sign-up page.

It’s a great program:

1:00pm – Welcome by Semi

1:10pm – IoT/AI/Edge Market – Using SOI Through-out, Jon Cheek, Senior Director, NXP

1:35pm – The SOI Opportunity, Manish Hemkar, Director, Semiconductor Products Group, Applied Materials

2:00pm – The Foundry IP Ecosystem, Jamie Schaeffer, Sr. Director, GlobalFoundries

2:25pm – Engineered Substrates – Enabling the IoT Revolutions, Eunseok Park, Director, Emerging Technology in Strategic Marketing, Soitec 

2:50pm – Enabling the SOI Era, Thomas Uhrmann, Head of Business Development, EVG

3:15pm – Panel: The Internet of Things, Driver of the SOI Supply Chain, Moderator: Carlos Mazure, Chairman, SOI Industry Consortium. Panelists include:

  • Manish Hemkar, Director, AMAT
  • Yoshio Kitahara, President & Managing Director, Kokusai Europe
  • Thomas Uhrmann, Head of Business Development, EVG
  • Jon Cheek, Sr. Director, NXP
  • Thomas Piliszczuk, EVP Strategy, Soitec
  • Jon Kretzschmar, Manager of Product Sales & Marketing, TEL America

4:05pm – Closing remarks, Carlos Mazure, Chairman, SOI Industry Consortium

4:20pm – End

This is a great chance to learn more about SOI and the SOI Consortium. Don’t miss it!

And while you’re at West, you should also check out a related event. SOI Consortium member Leti will be teaming up with Fraunhofer for a workshop entitled New Paradigms in Microelectronics–Providing R&D for the 21st Century. That happens at the nearby W Hotel in San Francisco on Tuesday, July 9th at 5:00pm. Click here for more information on that.

SOI Consortium & Ecosystem Shines at SOI Academy (Shanghai) & WCS (Nanjing)

The SOI Consortium and member companies had a significant presence at two important events in China recently: the World Semiconductor Congress (WCS) in Nanjing and the SOI Academy, including an FD-SOI Training Day in Shanghai.

Nanjing is especially known as a leading RF chip design hub in China, but WCS went well beyond RF. The three-day 2019 event was held at the Nanjing International Expo Center. It attracted over 30,000 visitors, 5000 of whom attended the various summit forums.

Presenting at WCS ’19 in Nanjing (clockwise from top left): Wayne Dai, CEO/Founder, VeriSilicon; Carlos Mazure, Executive Director, SOI Consortium; Giorgio Cesana, Director, STMicroelectronics; Christophe Tretz, Design Expert, SOI Consortium.
(Photos courtesy: WCS)

The SOI Consortium organized the SOI Forum, which was part of an afternoon Innovation Summit. Presentations were given by members of the SOI Consortium team, and by leaders from our membership, including Simgui, NXP, Incize, ST, IBM, Cadence and Xpeedic. Some of those presentations are now available from our website — click here to get them.

Earlier in the day, SOI Consortium member VeriSilicon participated in a morning session on AI and IoT Wireless Communications. They presented their low-power Bluetooth design platform for GlobalFoundries 22FDX, and CEO Wayne Dai moderated a lively round-table discussion.

Following hard on the heels of the Nanjing event, the SOI Consortium team and members headed to Shanghai for the SOI Academy 2019, hosted for the second year in a row by member SIMIT (Shanghai Institute of Microsystem and IT under the Chinese Academy of Sciences). The two-day event attracted more than 250 professionals from more than 100 domestic and foreign IC companies and research institutes.

Keynotes by SOI Consortium Executive Director Carlos Mazure, SITRI CEO Mark Ding and Jean-Eric Michallet, Head of the Microelectronics Components Department at Leti and bizdev director for the SOI Consortium focused on the SOI ecosystem. The SITRI and Leti talks also gave updates on their research and industrialization alliance. Further talks were given by leaders from Soitec, GlobalFoundries, VeriSilicon, IBM and Xpeedic. These addressed the growing FD-SOI ecosystem, applications in automotive electronics, 22 nm and 10 nm FD-SOI devices, advanced SOI substrate technology, China’s FD-SOI development, the FD-SOI manufacturing process, product design, EDA tools and all aspects of industry’s software and modeling value chain.

Several speakers noted that more and more local Chinese customers are actively adopting FD-SOI for low-power, high-performance chips.

SOI Academy, Shanghai, 2019, FD-SOI Training Day attendees.
(Photo credit: SIMIT)

The second day was devoted to hands-on professional training, given by experts from Leti using an actual PDK and punctuated by in-depth discussions. This helped the IC designers to fully understand the advantages and flexibility of FD-SOI in low-power logic, analog/mixed-signal and RF.

All in all, “It was a great success,” concluded Jean-Eric MICHALLET, Head of the Microelectronics Components Department at Leti and bizdev director for the SOI Consortium. Plans for the next SOI Academy are already underway, with plans to extend the topics to include more on photonics, RF, power and MEMS.

SiV SOI Symposium Part 3 – Final FD-SOI Takeaways

Why FD-SOI? What can you do with it that you couldn’t do before? That was the big question from IHS Markit’s Matthew Short that kicked off the first panel discussion at the SOI Consortium’s Silicon Valley Symposium. And there were some great answers.

VeriSilicon, Analog Bits and Silicon Catalyst were among the consortium members with stands at the SOI Symposium, Silicon Valley 2019.

Here in this final part of our coverage of the event, we’ll detail who said what in the two panel discussions, as well as the presentations by Leti, Intento Design & the SOI Consortium’s IP/EDA roundup.

If you missed the previous two installments of our coverage, you can catch up on the rest of the presentations in part 1 (NXP, Samsung & more) here and part 2 here (Synaptics, GlobalFoundries & more). Almost all of the presentations are now freely available under “events” on the consortium website – or just click here to get them.

How FD-SOI Changes What You Can Do

The presentation by Matthew Short, Sr. Director of IoT Technology at IHS Markit, was not specific to SOI, but it sure did lay out out the market opportunities.  Entitled IoT, 5G, ADAS and AI Market, it’s available on our website. Matt spent most of his career in chip design at NXP/Freescale, so he really has an engineer’s perspective on where this all is going.  At IHS Markit, they define IoT as anything with an IP address. Over the past year more than 10 billion devices were shipped, and there were more “things” than cellular handsets, so the world has really changed. He outlined the growth drivers, suggested that 5G won’t be a “wow” thing for consumers, and noted there is a lot of debate raging regarding how smart sensors should be (the Tier 1’s want smart).

He was then joined on the stage by the participants in the first panel discussion, which looked at product and application drivers. That included: NXP Fellow Rob Cosaro; Tim Dry, Director of Edge & Endpoints Marketing at Samsung Foundry; ST biz dev director Roger Forchhammer; CoreAVI biz dev VP Lee Melatti; Nokia VP Michael Reiha; and Analog Bits EVP Mahesh Tirupattur.

First Short asked why customers wanted more integrated solutions. For CoreAvi, it’s about safety, for ST in automotive it’s about security, for Analog Bits, it’s about integrating more analog, for Nokia it’s just a necessity.

Then he asked Why FD-SOI? What can you do that you couldn’t do before? For ST, which is doing MCUs for automotive, it’s about energy efficiency, speed, the density of non-volatile memory and the robustness of the technology. For NXP, it’s back biasing, low voltage and power numbers never seen before. “FD-SOI really makes a difference in the products we can bring to market,” said Cosaro. For CoreAVI, it’s the long-term power impact. And for Analog Bits, “Customers see huge benefits,” said Tirupattur, for cost sensitive applications. He has customers selling their technology in high volumes in FD-SOI.

What about edge vs. cloud?  For Nokia, it’s monolithic integration for best-in-class RF, advanced memory, biasing and voltage regulation adding a layer of intelligence. Samsung sees edge as distributed cloud, and CoreAVI sees safety in the edge, because you can’t completely rely on the cloud.

Where are the weak points in the FD-SOI ecosystem? For Samsung, more people need to use back biasing. “People need to use the knobs,” said Dry. For Analog Bits, the next step is innovation around back biasing, as many in logic don’t understand the benefits, so the ecosystem needs to promote the value proposition. ST suggests that with more products out there, customers will see the benefits. NXP did “a lot of the heavy lifting” at 28nm – now you need more people using these nodes, not just the cellphone nodes.

How will the architecture change? For NXP, it’s all about memory bandwidth. For Samsung, it’s the promise of analog and interconnect. Nokia sees the back-end and heterogeneous integration with FD-SOI and RF enablement. Analog Bits’ Tirupattur said he’s pushing his engineers for even lower power in a still smaller form factor, noting that most analog engineers had been more focused on performance than power, but now that’s changed.  For ST, it’s AI/ML throughout automotive, and FD-SOI is beneficial there.

Leti & the Connected Car

Leti’s slide 27, SOI Symposium, Silicon Valley 2019

Research giant Leti’s presentation was entitled Applications Around the Connected Car. 85% of Leti’s €315M budget comes from R&D contracts with its 350 industrial partners. Truly a driving force in FD-SOI, Leti is involved in a dizzying array of projects. For the connected car, they cover (much of it on SOI): high precision & smart sensing, embedded processing & fusion, new computing paradigms and deep learning, ultra-low power computing nodes & framework, ultra-low power connectivity for IoT, energy management and scavenging, and security. They do vision at the edge, 3D technology for smart imagers, and ways to dramatically reduce power. They’ve got a Qbits platform on FD-SOI for AI at the edge, a super low power neural network accelerator, and ULP connectivity. Check out the presentation for lots of details.

EDA/IP Overview

Slide 9 from SOI EDA/IP Overview.

SOI Consortium Executive Co-Director Jon Cheek gave a quick round-up presentation aggregating various IP and EDA offerings entitled , SOI EDA/IP Overview. It is taken from recent member presentations including Cadence, Silvaco, VeriSilicon, Synopsys and GlobalFoundries, giving you an idea of how dynamic the ecosystem has become.

Automating Analog

While the logic side of the design equation has long had robust automation tools, some consider the analog side as sort of black magic. New consortium member Intento Design aims to fix that. Here at ASN we covered their work with ST briefly a few months ago here.  At the SOI Symposium, the company’s CEO Dr. Ramy ISKANDER presented their solution in ID-XploreTM: A Disruptive EDA for Emerging FDSOI Applications. Intento, a partner in GlobalFoundries FDXcelerator program, has cognitive software for first-time right analog design. It determines the appropriate static and dynamic body biasing ranges to meet PVTB (Process/Voltage/Temperature/Body Bias), and is fully integrated into the Cadence Environment. They produced multiple correct-by-construction FD-SOI designs, and the total time spent to generate eight candidates FD-SOI designs took less than a day.  

The Tools Are in the Box

The last panel discussion, entitled Are the Tools in the Box? was moderated by the Consortium’s Jon Cheek. Participants included: VeriSilicon SVP David Jarmon; Arm PDG Marketing VP Kelvin Low; NXP’s Stefano Pietri, Technical Director of the company’s Microcontrollers Analog Design Team; Jamie Schaeffer, who’s GF’s Sr. Product Offering Manager for 22FDX and 12FDX; and Cadence Strategic Alliances Director Jonathan Smith.

2nd panel discussion, SOI Symposium, Silicon Valley 2019

Yes, the tools are in the box. Smith of Cadence said they’re providing them, and NXP’s Pietro said that they’re very well positioned in his specialty, analog. VeriSilicon has IP, and anything they don’t have in house they’ll license. 

So why be afraid of body biasing? NXP has proof by example – they see such huge cost advantages that they try to leverage it as much as possible. GF’s doing training, since each area (automotive, IoT, etc.) has different needs. Some VeriSilicon customers already see such substantial benefits from FD-SOI that they’re not bothering to do biasing. Cadence points out that the Arm POP announcement is huge, and Arm’s Low wondered if the SOI Consortium could do an IP portal?  “Our sales departments need to explain the advantages to our customers!” said NXP’s Pietro.

From the audience, NXP VP & longtime FD-SOI proponent Ron Martino (who, btw, wrote some great articles for ASN when they first got into FD-SOI – read them here), asked why designers think FD-SOI means a lot of corners? How do we convince the industry that FD-SOI simplifies design? Cadence is working with GF, responded Smith, and will have some big new at Arm’s TechCon this fall. “We need more training and marketing to show it’s not scary,” he added. For GF, the corners don’t get more complicated, and they’re working with Dolphin Integration on getting them covered early in the planning. Ease of access to IP will help, per Arm.

And in a great concluding remark, VeriSilicon’s Jarmon said, “The craft is being automated. The more we work together, the greater success of FD-SOI.”

PCM/MRAM Workshop by Leti and Applied Materials During 2019 IEEE Intl. Memory Workshop

Two of the big, recent breakthroughs in memory technology – eMRAM and ePCM – have gotten their start in volume manufacturing on 28nm FD-SOI. In conjunction with the 2019 IEEE International Memory Workshop, SOI Consortium members Leti and Applied Materials have teamed up to give a technical program to explore short-term and long-term memory solutions. While the workshop is not specific to SOI, given the recent foundry announcements about ePCM and eMRAM for FD-SOI, the organizers predict it will be of particular interest to those following the greater SOI ecosystem. The event takes place at the end of the Sunday IMW tutorial day, starting at 5:30pm at the Hyatt Regency in Monterey, CA. Please see this page for the program and registration information.

Here is the program:

  • Emerging Non-Volatile Memory Promises Toward New Energy-Efficient Design and Applications – Michael Tchagaspanian, VP Business Development, CEA-Leti
  • Technologies That Enable MRAM and PCRAM in Volume Manufacturing – Kevin Moraes, Vice President, Metal Deposition Products, Applied Materials
  • Technology Improvements Directions of Emerging Non-Volatile Memory for New Applications Solutions – Etienne Nowak, Head of Memory Laboratory, CEA-Leti
  • Integration Schemes and Challenges for New Memories in a New Artificial Intelligence Era –Michel Frei, Director, Advanced Product & Technology Development, Applied Materials

Jean-Eric Michallet, Head of Leti’s Microelectronics Components Department, Silicon Component Division is one of the organizers. Here is his overview:

FD-SOI is expected to be a long-lived technology. It enables planar CMOS scaling and accommodates a great deal of More-than-Moore developments where its ability for low power and great analog performance can make a difference for IoT, Automotive, Machine Learning or 5G applications. But to do this it requires a high-performance and cost-effective non-volatile embedded memory option. The incumbent Flash cell is reaching the end of its roadmap due to the difficulty of shrinking the bitcell and manufacturing, as well as the finished wafer cost increase. Back-end integrated Random Access Memory in advanced CMOS process has been explored for many years now as a competitive solution for fast-write and low-voltage non-volatile embedded memories. Foundry availability of embedded Magnetic RAM and Phase Change RAM for FDSOI 28nm platforms has been announced recently, showing that these technologies have now reached industrial maturity. CEA-Leti and Applied Materials invite you to attend a technical program to explore short-term and long-term memory solutions, from early research to industrialization.

Registration is open, free, and available to all IMW attendees, and others. However, as seating is limited and as we have already several participants pre-registered, registration is by invitation only and early registration is recommended. If you are interested, please email Jean-Eric Michallet.

The event is presented in conjunction with the 2019 IEEE International Memory Workshop, to be held on Sunday, May 12th, 2019, Hyatt Regency, Monterey CA, starting at 5:30 pm.

Silicon Valley SOI Symposium a Huge Success. Key Takeaways (Part 1) Here.

Takeaway #1: As NXP VP Ron Martino noted in his opening keynote at the recent SOI Symposium in San Jose, FD-SOI is the technology platform for enabling edge computing, and ultra-low power is the sweet spot. 

Organized by the SOI Consortium with support from our members, the recent SOI Symposium in Silicon Valley was an enormous success. Close to 300 decision makers signed up – more than double what we saw just a couple years ago. Attendees spanned the ecosystem: from end-users to design to foundries and right up to the investment community. The presentations and panel discussions were absolutely terrific, and almost all are now freely available – click here to get them.

The focus was heavily on FD-SOI this time, but some very interesting RF-SOI talks were given as well. This was a day packed with presentations by players from across the SOI ecosystem. In this post, we’ll only cover a few. But the others will follow quickly, so watch this page. And now without further ado, let’s dive in.

NXP: In the Sweet Spot

NXP VP Ron Martino presenting at the 2019 SOI Symposium in San Jose.

NXP is designing FD-SOI into many new products, said Martino, GM of the i.MX Processor Application Product Line. There’s a new wave of products – generically you could call them IoT but in fact they’re found throughout the industry. It’s about interacting with the cloud, so edge processing is critical. His presentation, Embedded Processors for Future Applications, is now freely available for downloading from our website.

The new i.MX7ULP is a great example of ULP in the sweet spot. From a design standpoint, it leverages IP, power optimization, and what he described as “starter biasing”. That gets them the long battery life with 2D & 3D graphics they need for wearables and portables in consumer and industrial applications.

NXP slide 10, SOI Symposium, San Jose ’19 (Courtesy: NXP)

Having deepened their expertise in biasing, NXP has now moved on to “advanced biasing” for the next generation of products. For example, the i.MX RT ULP (real-time, ultra-low-power) series are “cross-over” processors, which Martino says are the “new normal”. They deal with a high number of sensor inputs. The i.MX RT 1100 MCUs, which have been qualified for automotive and industrial applications, are breaking the gigahertz performance barrier with a low-power, 28nm FD-SOI process.

Another new product leveraging advanced biasing is the i.MX RT 600. They’ve done hardware acceleration on specific functions and optimized around visionand voice integration at low cost and power.

As shown at Embedded World ’19, automotive app for NXP’x i.MX 8, which is on 28nm FD-SOI. (Courtesy: NXP)

Likewise for the i.MX 8 and 8X subsystems for automotive and industrial applications. At Embedded World, they showed it driving advanced OLED screens, cameras (for parking, for example), V2X, audio, user monitoring (like driver pupil tracking), and integration into the windshield in a heads-up system. This is the high end of the capability of 28nm FD-SOI, he said. It’s a 6 CPU core system with multiple operating systems, about which he said: “It’s the dashboard…it’s amazing.”

BTW, in another presentation, CoreAVI, which builds avionics, automotive and industrial products on NXP’s i.MX 8, addressed safety. You can get that here.

FD-SOI enables a scalable solution for real-time and general compute with the lowest leakage memory, the best dynamic and static power, Martino concluded. NXP’s leadership in body biasing is enabling edge compute, and we can expect to see more content coming soon.

In another NXP presentation later in the day, Stefano Pietri, Technical Director of the company’s Microcontrollers Analog Design Team caught a lot of people’s attention. A wave of cameras went up to capture each of his slides in Analog Techniques for Low Power, High Performance MPU in FD-SOI – but you can get the whole thing now from our website. It’s a very technical presentation, in which he details the many ways FD-SOI makes the analog team’s job easier, enabling them to get performance not available from bulk technologies. They developed a lot of in-house expertise and IP (see slide 16 for a catalog of the IP).

Samsung: Enabling LP Endpoint Products

Tim Dry, Samsung Foundry Director of Edge & Endpoint, SOI Symposium, San Jose ’19

Tim Dry, Director of Foundry Marketing: Edge and End Point presented Samsung’s FDS with MRAM: Enabling Today’s Innovative Low Power Endpoint Products. In a telling first, Samsung has made this presentation available on our website.

FD-SOI covers the wide range of requirements for intelligent IoT, he explained: from high to low processing loads; and active to dormant processing duty cycles. That includes chips that will last for ten years, and need to be able to wake up fast and kick right into high performance. These products are 50% analog, and packaging is part of the solution (especially for the RF component).

Samsung has been shipping 28nm FD-SOI (which they call 28FDS) since 2015, first in IoT/wearables, then in automotive/industrial and consumer. Yields are fully mature. In March 2019, they announced mass production of eMRAM on 28FDS. It’s a BEOL process, adding only 3 masks. It cuts chip-level power by 65% and RF power by 76% over 40nm bulk with external memory. Beyond the fact that it’s 1000x faster than eFlash, eMRAM also has other advantages that make it especially good for over-the-air updates, for example.

Samsung Foundry FD-SOI IP slide, SOI Symposium, San Jose ’19 (Source: Samsung Foundry Keynote at SOI Symposium 2019, USA)

Samsung also has RF and 5G mmWave products shipping in 28FDS. The company has a fantastic ecosystem of partners helping here, said Dry. In AI at the endpoint, they’re shipping IoT products for video surveillance cameras: some are high speed, but some are also low speed – it depends on the detection use case. And most importantly for the design ecosystem, the IP is all ready.

Next up for Samsung is 18FDS, which will ship this year with RF, then in 2020 with eMRAM. 18FDS, Dry said, is optimized for power reduction. Compared to 28FDS, it’s got 55% lower power consumption, 25% less area and 17% better performance at the same power. You’ll hear more about it as well as their design services if you’re at the Samsung Foundry Forum in May (registration info here).

ARM’s Biased Views

Kelvin Low, VP of Marketing for Arm’s Physical Design Group (PDG) gave a presentation entitled Biased Views on the Industry’s Broadest FDSOI Physical IP Solution. By way of background, Arm and Samsung Foundry recently announced a comprehensive, foundry-sponsored physical IP platform, including an eMRAM compiler for 18FDS. In case you missed it, at the time Arm Senior Product Marketing Manager Umang Doshi described the offering in an Arm Community / Developer physical IP blog, which Arm graciously agreed to share with ASN readers.

Slide 9 from Arm’s presentation, Silicon Valley SOI Symposium 2019.

At the SOI Symposium, Low emphasized to the audience that Arm now has the broadest range of FD-SOI + IP solutions. It addresses mobile, consumer, IoT, automotive and AI/ML.

There are 18FDS POP (processor optimized pipe) packages for Arm Cortex-A55, Cortex-R52 and Cortex-M33 processors. IP integrates biasing and a number of standard PVTs (corners). And since the Samsung platform is foundry-sponsored, it’s free.

Slides 6 and 11 from Arm’s presentation, Silicon Valley SOI Symposium 2019. The goal of POP IP is to enable partners to implement and tapeout Arm cores with the fastest turn-around time and best-in-class PPA while maximizing the benefits of process technology.

Arm did a test chip with eMRAM, which they’ve just gotten back. It’s functional (some details are available in slide 14 of their presentation), and the company is now preparing a demo board that they’ll be showing shortly. Watch this page!

That’s all for this post. The next post — part 2, covering presentations by Synaptics, GlobalFoundries, STMicroelectronics, Dolphin Integration and Anokiwave — is now available. Click here to read on.

FD-SOI for RF & mmWave: Free Workshop, 4 April ’19, Grenoble

FD-SOI for RF and mmWave communications is a hot topic. In high-data rate communications like RF and millimeter-wave devices in particular, FD-SOI delivers high-performance with numerous unique advantages, making it most likely the fastest RF-CMOS technology on the market.

If you’d like to take a deep dive and learn more about it, Soitec and Incize are sponsoring a free, full-day workshop in Grenoble on April 4th, 2019. Click here for registration information. The workshop follows the day after the IEEE/EDS EuroSOI-ULIS conference there (you can read about the full conference in a previous ASN post).

This technical workshop will cover the FD-SOI technology platform with a focus on its compatibility with RF & mmWave communications. Attendees will hear from notable FD-SOI leaders and experts from leading industry and research institutions presenting updates on key developments and building blocks across the semiconductor value chain. Topics will include circuit design, device fundamentals, simulation and characterization of RF devices, test, CMOS technology and substrate technologies enabling FD-SOI. In addition, the workshop will include an overview about how FD-SOI technology is benefiting current and future end user applications.

Here’s the agenda:

FD-SOI technology platform: new standards for emerging consumer electronics [Click to enlarge.]

 

2019 Greetings for the Start of an Exciting Year in SOI

Welcome to our first post for 2019 here at the SOI Consortium’s Advanced Substrate News. First and foremost, may we wish you and yours a safe, happy, healthy and prosperous year.

It should be a good year across the SOI ecosystem, with new products, players, IP, technologies and tools — and high volumes.

What’s new? Let’s start with the people, as the Consortium welcomes new team members. Jon Cheek of NXP will join Carlos Mazure as Executive Co-Director. He’ll be replacing ST’s Giorgio Cesana in that role – and goodness knows those are some big shoes to fill. Giorgio has given of his time and expertise so tirelessly over many years. He’ll of course still be a key resource for the SOI ecosystem, and though we’ll miss him here at the Consortium, we know he’ll be doing great things in SOI at ST. So a heartfelt thanks to Giorgio Cesana from all of us.

Jon Cheek has a long history in engineering management at companies that have been leading users of SOI: AMD, Freescale and now NXP. As such, he understands what companies need to design great products, and how the Consortium can help further build, promote, connect and support the ecosystem. The Consortium team also welcomes Jean-Eric Michallet of Leti, who’ll bring deep bizdev expertise and a keen sense of what it takes to reach further into the ecosystem. (Astute long-time ASN readers might remember his post from five years ago about 3D monolithic integration – now dubbed “Cool Cube” by Leti.) And finally, look to hear more from and about the Consortium, as our team is rounded out with the addition of the comm & marketing savvy of Erin Berard of Soitec.

In addition to new team members, the Consortium is very pleased to welcome new member Applied Materials. Though new to the Consortium, AMAT has a long history in the heart of SOI ecosystem – in fact they’ve been working with SOI wafer-leader Soitec for over 25 years. AMAT ion implanters are a key enabler to what became and is Soitec’s industry-leading Smart CutTM SOI wafer manufacturing process. And of course AMAT equipment is used to make virtually every chip in the world, so their breadth of vision as a consortium member is clearly a fabulous addition.

2019 will also be marked by the expansion of the highly successful SOI Academy series, the first of which was held this past fall in Shanghai. We’ll keep you posted as these and other Consortium events are announced throughout the year. In fact, 2019 marks a decade of (excellent!) SOI Consortium events events around the world: our first symposium was held back in 2009. Kicking off this year, save April 9th on your calendar for our Annual SOI Silicon Valley Symposium. Then watch this page for more events across the globe.

What will the year bring? On the product side, RF-SOI for 5G is of course super hot. Last summer, a SemiconductorEngineering headline proclaimed RF-SOI Wars Begin. And what we heard at the International RF-SOI Workshop last fall in Shanghai (presentations here) certainly confirmed that in the coming year the race will continue unabated.

Part 3 in SemiconductorEngineering’s “Experts at the Table” series on FD-SOI featured James Lamb of Brewer Science, Giorgio Cesana of ST, Olivier Vatel of Screen, and Carlos Mazure of Soitec. (Image courtesy: SemiconductorEngineering.com)

And for FD-SOI, you might want to read the SE series published over the last six months. The latest, published a couple of weeks ago looks at FD-SOI at the Edge. There are some great insights from SOI Consortium members there. In terms of products, too, there’s lots of activity.

Last summer, Samsung indicated they’d taped out over 60 products since they first began offering 28FDS three years ago. It’s a trend they see accelerating.  Full production of 18FDS is slated for this fall.

And also last summer GlobalFoundries indicated they had over 50 client designs on 22FDX. “We’re only just beginning,” said GF CEO Tom Caulfield at the time. “We have found a way to separate ourselves from the pack by emphasizing our differentiated FD-SOI roadmap and client-focused offerings that are poised to enable connected intelligence. ”

For its part, ST, as we learned at the last SOI Consortium Japan Workshop, has been doing FD-SOI for five years now. And while we don’t have number, we learned that some of those products are now in their second and third generations, and that some big FD-SOI chips coming out this year with embedded memory and RF, with especially good traction in mmWave, automotive and IoT.

So while the outlook for the overall industry is anyone’s guess for the coming year, the outlook for chips built on SOI technologies is very good indeed.

FD-SOI Training: Over 220 Attend 1st SOI Academy in Shanghai

There were over 220 participants at the recent SOI Academy FD-SOI Training event organized in Shanghai. The event extended over two days, with the first day covering a basic introduction to the technology as well as the ecosystem worldwide and in China. The second day was hands-on professional training. Attendees got a comprehensive understanding of how to leverage the benefits and flexibility of FD-SOI design techniques for low-power chips including logic, mixed-signal/RF and analog blocks.

They had a great line-up of experts from whom to learn – check out the agenda here. There was also a follow-up press release (in Chinese) from SITRI here. There will be more of these SOI Academy events in cities across China in the year to come – we’ll keep you posted (and of course, keep checking back for news on the Consortium’s Events page).

SOI Academy ’18 keynotes by: Dr. Mark Ding, CEO, SITRI; Dr. Carlos Mazure, EVP Soitec and Chairman/Executive Director SOI Consortium. Dr. Julien Arcamone, EVP Leti. (Images courtesy: SITRI). Lower right: the hands-on FD-SOI training.

The two-day seminar and hands-on FD-SOI design training was (superbly!) co-organized by SITRI and Leti, with the support of the SOI Industry Consortium at the Jiading SIMIT campus outside of Shanghai.

Just to put this in perspective, SIMIT and SITRI are absolutely key players in China’s chip ecosystem. SIMIT is the Shanghai Institute of Microsystem and Information Technology, one of the most venerable institutes in the Chinese Academy of Science (CAS) and one of the world’s earliest pioneers in SOI. SITRI is the Shanghai Industrial μTechnology Research Institute, an international innovation center focused on globally accelerating innovation and commercialization of More-than-Moore for IoT. Both institutions are under the aegis of Dr. Xi Wang, Chairman of SITRI, Director General of SIMIT, Academician of CAS, and champion of all things SOI in China.

At this Shanghai event, the participants came from industry (including big companies, SMEs and startups) and technical institutions. In fact as well as attendees from Shanghai people voyaged from other cities such as Shenzhen and Chengdu.

The designers participating to the FD-SOI training day were all experienced in design and highly motivated in learning FD-SOI design, notes Carlos Mazure, Chairman & Executive Director of the SOI Industry Consortium, and Executive VP of Soitec. “This made it possible to dive into the specificities of FD-SOI,” he said, adding that, “The focus on RF was very timely.”

Day 1: Intro to FD-SOI

The first afternoon opening keynotes were made by SITRI CEO Dr. Mark Ding and Leti EVP Dr. Julien Arcamone. These were followed by overview talks by execs from Soitec, Verisilicon and GlobalFoundries.

After a lively networking break, three talks delved into FD-SOI technology. The first was by Professor Sorin Cristoloveanu, Laureate of the IEEE Andrew Grove Award and Director at the CNRS (the French National Center for Scientific Research – the largest governmental research organization in France and the largest fundamental science agency in Europe). He covered device physics and characterization techniques. This was followed by talks on the technology by Soitec Fellow Bich-Yen Nguygen, and by Dr. Christophe Tretz, IBM Sr. Engineer on product design methodology.

The day ended with a dinner, where Professor Cristoloveanu says enthusiastic technical discussions continued unabated (and continued even further in follow-up emails), lots of business cards were exchanged, and opportunities for further education were explored.

Day 2: Hands-on Training

The second day, designers got hands-on training from Leti experts using FD-SOI PDKs, first in the morning on digital, then in the afternoon on RF. Everyone loved the lively discussion and in-depth exchanges between the experts and the designers. They agreed that FD-SOI has important applications and differentiated competitive advantages for IoT, 5G, automotive, AI and other fields. At the end of the training, Leti and SITRI jointly issued SOI Academy certificates of completion to the designers.

Feedback from participants was very good. Some asked for further education and for hands-on testimonials from companies that are already designing and manufacturing products on FD-SOI.

“The participants were focused, motivated, involved, with good knowledge, which helped make the three hours of Digital training effective,” said Dr. Alexandre Valentian, Leti Sr. Expert, Digital Design. “The IT team was very helpful in setting up the training, the students accounts and the hardware infrastructure.”

“The training on Basics of FD-SOI RF circuit was a great success thanks to the efficiency of our Chinese partners and also thanks to the enthusiasm and the good level of our trainees. As senior Expert of CEA Leti I was really impressed by the professionalism of the organization team. For all these reasons, I’m very glad to have had the opportunity to contribute to the 2018 SOI Academy,” said Dr. Baudouin Martineau, Leti Sr. Expert, RFIC Design & Technologies.

“The professionalism, efficiency and enthusiasm of our Chinese partners and the level and technical relevance of all trainees made the training on Basics of FD-SOI RF circuit a great success and fruitful experience,” added Frédéric Hameau, Sr. RF Research Engineer, Leti Project Leader, Architecture, IC Design & Embedded Software Division, RF Architectures and ICs Laboratory. “It was a pleasure to get the opportunity to be part of this first edition of SOI academy 2018.”

The organizers would like to thank the sponsors, including: the SOI Consortium and its members Soitec, VeriSilicon, GlobalFoundries, Simgui and Cadence, as well as Mentor, ProPlus and other companies and institutions in China and worldwide. Dr. Mazure notes that special recognition must go to Dr. Julien Arcamone, EVP, Leti-CEA and to Qing Wang-Bousquet, SITRI representative, for the perfect and smooth organization, and to the Leti instructors, who are international experts and highly committed.

“As one of the main initiators and organizers of the 2018 SOI Academy, I wanted to personally thank all of you for your respective contribution to this first edition of the SOI Academy,” concludes Dr. Arcamone. “Undoubtedly, it was a great success, very well organized and fluid and we can be proud of that.”