Tag Archive MuGFET

SOI at IEDM 2010
Posted date : Jan 24, 2011

The 2010 IEEE International Electron Devices Meeting (IEDM) was held December 6-8, 2010 in San Francisco. The IEDM continues to be the world’s

Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT)
Posted date : Dec 8, 2010

Researchers in academia have partnered with industry to increase understanding of critical issues in advanced non-classical CMOS devices. Highly