Tag Archive Fraunhofer

ByAdele Hars

Synopsys-GF-Qualcomm Panel, Leti/Fraunhofer Team Up – FD-SOI Center Stage at Leti Innovation Days

Before summer’s no more than a twinkle in our eyes, let’s take a moment to catch up on a key event where FD-SOI took center stage: Leti Innovation Days. French research powerhouse Leti was celebrating 50 years of innovation, so it was a real gala event.

FD-SOI and other SOI technologies were seen and heard throughout the presentations and in the exhibition spaces. But there were a couple of things that were especially interesting that I’ll cover here in ASN. In particular, a panel discussion with GF, Synopsys and Qualcomm; and the big announcement from Leti and Fraunhofer supporting continued FD-SOI development.

(There were also some great info about body biasing in FD-SOI, but we’ll save that for a future post.)

The Panel & More

A session on Micro-nano Pathfinding and the Digital Revolution featured a fascinating panel discussion on Future Applications and New Technologies. As Rajesh Pankaj from Qualcomm, Alain Mutricy from GF and Antun Domic from Synopsys discussed the prospects, FD-SOI quickly took center stage.

FD-SOI took center stage at this Leti Innovation Days 2017 Panel Discussion. Left to right: Antun Domic, CTO, Synopsys; Alain Mutricy, GF’s SVP, Product Management Group; Rajesh Pankaj, Qualcomm’s SVP Corporate R&D.

Here are some FD-SOI observations from GF’s Alain Mutricy:

  • It’s planar, so it’s not hard to design in.

  • It’s the only technology that can get down to 0.4V, and it has the lowest leakage/cell. That will be key for all mainstream applications (except high-end servers) for at least a decade or two.

  • 12 FDX with forward body bias (FBB) will get 7nm FinFET performance.

  • They’re looking forward to broad FD-SOI adoption. It will enable the next wave of technology and mobile devices.

Synopsys’ Antun Domic noted that:

  • Currently, 50% of silicon area comes from just 3 or 4% of designs. FD-SOI makes design simpler, so the EDA companies are looking for it to open the door to more designs.

  • From a design perspective, three thresholds was standard, but that’s not enough. Place and route could stretch to 10 or 15 corners. FD-SOI simplifies tool flow and cuts mask costs. It’s less complicated than you think.

That tech session, btw, began with an excellent testimonial by Leti partner, Soitec. (Remember: the technological innovation that enabled modern SOI wafers came out of Leti and was industrialized by Soitec.) Check out the snapshot below to get an idea of all the areas that SOI-based technologies address.

Soitec SVP Christophe Maleville shows the many product lines of SOI substrates.

Leti, Fraunhofer & FD-SOI

The big piece of news to come out of Leti Days is that Leti is teaming up with Fraunhofer to “…strengthen microelectronics innovation in France and Germany” (read the press release here). The agreement was signed by Leti CEO Marie Semeria and Fraunhofer Group for Microelectronics Chairman Hubert Lakner at an official ceremony. A lively the press conference followed. Prof. Lakner emphasized that they are working on a common European roadmap, with a clear plan for collaboration on FD-SOI. Europe, he said, is a good idea, and working together, France and Germany can do a lot for industry. For FD-SOI, Leti is focused on the front-end, and Fraunhofer is working on the back-end.

Working together, they can elevate pillars like FD-SOI from the country level to the European level, noted Dr. Semeria. And that puts them in a more elevated position for EC funding initiatives such as an upcoming IPCEI – which stands for Important Project of Common European Interest.

Leti CEO Marie Semeria and Fraunhofer Group for Microelectronics Chairman Hubert Lakner announced “new collaboration to develop innovative, next-generation microelectronics technologies to spur innovation in their countries and strengthen European strategic and economic sovereignty.” (photo credit: Pierre Jayet)

Initially, however, the focus will be on extending CMOS and More-than-Moore technologies to enable next-generation components for applications in IoT, augmented reality, automotive, health, aeronautics and other sectors, as well as systems to support French and German industries. A second phase extending to other partners and countries is possible. We’ll keep you posted.

In closing, I’m sure you’ll all join me in extending hearty congratulations to Leti on their 50th anniversary. And here’s to their next 50 years of innovation – can you imagine what that might bring? It rather boggles the mind, doesn’t it?

 

ByGianni PRATA

European R&D Leaders Team on SOI-MEMS Platform for Industry, SME’s

The Heterogeneous Technology Alliance (HTA), a coalition of top European R&D organizations, is offering an SOI-MEMS platform. Looking to bridge the gap between academia and industry, this technological platform pools the SOI-MEMS expertise, capabilities and fabrication facilities of Leti (France), Fraunhofer (Germany), CSEM (Switzerland) and VTT (Finland).

The main focus of HTA (click here for the website) is the further development of innovative Smart Systems. SOI-MEMS is typically used for silicon oscillators, microphones, speakers, compass, navigation, motion sensors, sensors and actuators, energy harvesting, micro fuel cells, microfluidics and other deep reactive-ion etched micro structures. A recently issued brochure gives an overview of the offering.

The HTA is active at all levels of Smart Integrated Systems Solutions: from applied research on materials, processes and equipment through the fabrication of devices and components to the development of new products and services. Development and small-scale production cleanrooms for micro-electronics, MEMS, power electronics and analogue components is available. Wafer handling capacity encompasses wafer sizes ranging from 100, through 150 and 200 to 300 mm.

A one-stop shop for complete system solutions, the HTA guarantees simple access to an enlarged portfolio of technologies and is structured to facilitate technology transfer to European and non-European companies. In addition to working with large industrial partners, the HTA offers services specially suited for small and medium-sized companies. With a combined staff of more than 5,000 scientists and a portfolio of more than 3,000 patents, the HTA is de facto the largest European organization in the field.

HTA_SOI_MEMS

ByGianni PRATA

III-V wafer bonding has enabled a new world record for the conversion of sunlight into electricity, announced the Fraunhofer Institute for Solar Energy Systems ISE, Soitec, CEA-Leti and the Helmholtz Center Berlin.

Solar Cell

World record solar cell with 44.7% efficiency, made up of four solar subcells based on III-V compound semiconductors for use in concentrator photovoltaics. (Photo ©Fraunhofer ISE)

III-V wafer bonding has enabled a new world record for the conversion of sunlight into electricity, announced the Fraunhofer Institute for Solar Energy Systems ISE, Soitec, CEA-Leti and the Helmholtz Center Berlin. Creating a new solar cell structure with four solar subcells, the team took the lead after only over three years of research, entering the roadmap with a new record efficiency of 44.7%. This indicates that 44.7% of the solar spectrum’s energy, from ultraviolet through to the infrared, is converted into electrical energy. This is a major step towards reducing further the costs of solar electricity and continues to pave the way to the 50% efficiency roadmap. Wafer bonding plays a central role, as it enables the connection of two semiconductor crystals that otherwise cannot be grown on top of each other with high crystal quality. This produces the optimal semiconductor combination for the highest efficiency solar cells.

A few weeks prior, Soitec announced the launched of a new solar-energy concentrated photovoltaic (CPV) module featuring 31.8% efficiency, the highest of any commercial module being mass produced today.