Tag Archive IEDM

IEDM

http://www.his.com/~iedm/

San Francisco, December 2008

The IEEE’s International Electron Devices Meeting (IEDM) is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology.

Here is a comprehensive listing of the papers of interest to the SOI and advanced substrates community.

Breakthroughs at the IEDM

The IEEE’s International Electron Devices Meeting (IEDM) is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology.

Here are a few highlights from some of the papers that presented advances in SOI-based devices and architectures at the most recent meeting (December 2008, San Francisco). Read More

Less Than Ever

Hitachi demonstrates why it has the smallest Vth variability, and identifies the remaining components of random doping fluctuation.

In a “Comprehensive Study on Vth Variability in Silicon on Thin BOX (SOTB) CMOS with Small Random-Dopant Fluctuation: Finding a Way to Further Reduce Variation,” (N. Sugii et. al., IEDM 2008) Hitachi scientists at the Central Research Laboratory demonstrated that the planar FDSOI devices fabricated on SOTB have the smallest Vth variability among planar CMOS due to low-dose channel and back bias control. Read More