Here are a few highlights from some of the papers that presented advances in SOI-based devices and architectures at the most recent meeting (December 2008, San Francisco). Read More
Hitachi demonstrates why it has the smallest Vth variability, and identifies the remaining components of random doping fluctuation.
In a “Comprehensive Study on Vth Variability in Silicon on Thin BOX (SOTB) CMOS with Small Random-Dopant Fluctuation: Finding a Way to Further Reduce Variation,” (N. Sugii et. al., IEDM 2008) Hitachi scientists at the Central Research Laboratory demonstrated that the planar FDSOI devices fabricated on SOTB have the smallest Vth variability among planar CMOS due to low-dose channel and back bias control. Read More