Tag Archive nanowires

Don’t miss EuroSOI-ULIS, 25-27 January 2016 in Vienna. Call for papers still open.

logo_eurosoi_ulisThe 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, aka EUROSOI-ULIS 2016 will be taking place January 25-27, 2016 in Vienna, Austria. The event will be hosted by the Institute for Microelectronics, TU Wien. The focus of the sessions is on SOI technology and advanced nanoscale devices. The organizing committee invites active participation and submission of high quality papers (the Paper Submission deadline has been extended until Dec. 14 2015).
EuroSOI is a conference that’s been going on for decades. Many of the leading edge SOI technologies making headlines today were first presented here. This year’s conference features talks by top researchers from Europe and Japan, and a plenary talk from ON Semi entitled SOI technology for advanced power management: context and trends.
Click here for conference registration details.

The Paul Scherrer Institute reports that they have achieved strained silicon nanowires with the highest strain ever

Strained silicon nanowires

(Graphics: Paul Scherrer Institut/ R. Minamisawa)

Starting on SOI, the Paul Scherrer Institute reports in Nature that they have achieved strained silicon nanowires with the highest strain ever (4.5% elastic strain).

The principle of the method used for achieving a high stress in silicon: Firstly, the forces act in all directions in the silicon layer. If small parts of the layer are then etched away to create a thin wire, the forces act along the wires so that a high stress is created within them.