Tag Archive SMIC

ByAdele Hars

Does China Mobile Care About RF-SOI for 5G? Oh Yes.

China Mobile is the world’s largest* telco. So when Danni Song, one of the company’s high-level project managers presented at the SOI Consortium’s 5th International RF-SOI Workshop in Shanghai, you can bet people listened. With each new slide, a glowing sea of cell phone cameras rose over the heads of the audience in the huge, packed ballroom.

(Photo courtesy: SOI Consortium, Simgui)

Over the last month, there’s been a lot more coverage of 5G in the press (especially after the recent Mobile World Congress (MWC) – check out Junko Yoshida’s EETimes piece for example). For ASN readers who want to know more about 5G and RF-SOI in China, here’s a reminder that Song’s presentation, and many of the others given by leading companies at the RF-SOI Workshop last fall, are now posted on and freely available the Consortium website Events page. Click here for the listing and links.

The theme of the workshop was IoT, mobile, 5G connectivity, and mmW. As Dr. Xi Wang, Director General of SIMIT/CAS (the Shanghai Institute of Microsystem & Information Technology in the Chinese Academy of Sciences), said in his opening keynote, China is strong in RF-SOI. RF-SOI will be growing at a CAGR of over 15% for the next five years, and China has production, design, wafer manufacturing and good momentum. “We will make a great contribution to the whole IC industry,” he predicted.

Of note, too, Russell Ellwanter, CEO of TowerJazz, gave what turned out to be a very inspirational keynote about Value Creation, and the importance of treating your suppliers with respect. He credits his company’s close relationship with RF-SOI wafer-supplier Soitec for TJ’s claim to the world’s best linearity. Five of their seven fabs do RF-SOI. LNA (low-noise amplifers) are a big market driver, and with RF-SOI they can integrate the LNA with the switch.

Here are some more highlights from the day – but by all means check out the presentations for details. (You can click on the illustrations to see them in full screen.)

China Mobile

In her presentation, Embrace a Brand New Cooperation in 5G Era, Song asked where RF-SOI could help in her wish list. Could it increase integration and decrease cost and power consumption? Can it help improve NB-IoT device performance? The supply chain needs to come back around into a circle, so that the telcos are connected to and get insights from the wafer substrate providers, she said.

(Courtesy: China Mobile, SOI Consortium)

China Mobile has a 5G Innovation Center, and has established test labs in 8 cities. And the government has announced a 5G launch in 2020, with pre-commercial trials now going into 20 cities. So she was at the RF-SOI Workshop as much to listen and learn as to share China Mobile’s vision.

Sony

(Courtesy: SOI Consortium and Sony)

The presentation by Kidetoshi Kawasaki, GM of Sony Semiconductor Solutions, focused on antenna tuning, which he said is one of the fastest growing things in cell phones. Antenna Tuning Progress & SOI Single Chip Integration for 4G/5G UE (note that UE = user equipment) looks at antenna aggregation, and why it is important for carrier aggregation (CA) and MIMO. Sony has developed an SOI-based next-gen process for 5G integrating passive components. That’s why RF-SOI is important and will be continued to be used in the mobile market, he said.

GlobalFoundries

GF has developed demo vehicles to help customers, said Sr. Director of the RF Business Unit, Peter Rabbeni. (Over the years they’ve shipped over 32 billion RF-SOI devices, btw.) In his presentation, RF-SOI: Delivering Performance & Integration for the Next Generation of Mobile,he noted that RF is becoming more complex than digital. As a result there is a need to integrate to help reduce cost: this is a direct correlation to the standards that are driving complexity. At the same time, performance requirements are increasing, so the challenge is driving increased performance at the same or lower cost than previous generations of products.

(Courtesy: GlobalFoundries and SOI Consortium)

To meet 4G/LTE and 5G’s evolving performance demands, GF has recently introduced two new RF-SOI platforms, which he detailed in the presentation. 8SW enables increased integration of front-end modules (FEMs), while 45RFSOI is for mmWave FEMs. (In a separate presentation, IDDO-IC CEO Denis Masliah presented a Differential Complementary Millimeter Wave Power Amplifier for 5G using 45RFSOI process, which is currently being fabbed by GF.)

RF-SOI Wafer Suppliers

The two leading RF-SOI wafer suppliers, Soitec and partner Simgui, both gave excellent presentations. Though Soitec EVP Bernard Aspar’s presentation Engineered Substrates as Foundation of Innovation in RF is not posted, he made some important points. Up til now, RF-SOI has mainly been about switches and tuners, he said, but there are other opportunities that offer the potential for huge growth. The full supply chain needs to be prepared, he said, and suppliers need to understand each other. Each technology requires the right substrate – and even as we move into sub-6GHz 5G, there is still work to be done in 4G. In fact Soitec is now offering services to help customers better understand new substrate options.

(Courtesy: Simgui, SOI Consortium)

Soitec’s partner in China, Simgui, now uses Soitec’s Smart CutTM technology for RF-SOI wafer production. Together the two are now producing over a million 200mm RF-SOI wafers/year, said Simgui Sr. Director, Kerui Wang. His presentation, RF-SOI – a Secured Substrate Supply Chain, looked at their strategic partnership with Soitec, wherein they use the same tools and processes to deliver the same products meeting the same specs.

Fabs and Fabless

Two leading fabless companies – RDA Microelectronics (which was acquired by Spreadtrum) and SmarterMicro also presented their RF-SOI activities. Although their ppts are not posted, here are a few highlights.

Longtime ASN readers will recall that RDA has been shipping high-volume, RF-SOI based chips to Samsung and others for over five years. In the presentation, RF-SOI in Current and Future RFFE Solutions, Engineering AVP Joseph Jia said that over last two years alone they’ve released almost 50 RFFE (front end) chips on RF-SOI. They see RF-SOI as the right match for switches, tuners and NB-IoT because of the low-voltage and tunability advantages.

SmarterMicro’s CTO, Peter Li, sees RF-SOI as a cornerstone of 5G. In his presentation, Reconfigurable RFFE in 5G, he said the goal is smart systems on fewer dies to decrease size and cost.

Jeff Zhu, assistant director at SMIC, presented SMIC, 0.13um RF-SOI Platform Updates. Mainland China’s largest foundry has recently moved its RF-SOI process from 180 to 130um, and he walked us through some chip designs.

Throughout the day, presenters noted that RF is a great opportunity for China to take a leadership position. As one panelist at the end of the day noted, RF depends more on expertise and talent than digital, which depends more on manpower.

Nanjing: A China RF Capital

Just before the Shanghai events, there was a 2-day event sponsored by the City of Nanjing, co-organized by SOI Industry Consortium and the City of Nanjing. Over 200 participants attended the workshop and tutorials on SOI applications, SoC development and manufacturing, EDA & IP ecosystem, as well as a design tutorial for More than Moore SOI ecosystem. Almost all of those presentations are now posted on the Consortium – click here to get them.

Some of the participants in the SOI Consortium’s delegation also had the opportunity to visit the enormous Nanjing Sofware Park. Nanjing, we learned, is often considered China’s “RF capital”. The list of the world’s major RF players working in partnership there is certainly an international who’s who.

So, lots of good RF-SOI/5G info on the SOI Consortium website – check it out!

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*in terms of market value and subscribers.

By

Successful RF-SOI 2014 International Symposium Held in Shanghai

A very successful international workshop on RF-SOI was held in Shanghai earlier this fall.  Jointly organized by industry leaders, it brought together world-class players in RF to discuss the opportunities and challenges in rapid development of RF applications.Sponsors included the SOI Industry Consortium, the Chinese Academy of Sciences (CAS) / Shanghai Institute of Microsystem and Information Technology (SIMIT), Shanghai Industrial μTechnology Research Institute Co.,Ltd. (SITRI) and VeriSilicon.

The first talk, given by Dr. Xi Wang, Academician of CAS and Director General of SIMIT, covered China’s huge market prospects for RF applications. RF-SOI, he noted, is an area in which Shanghai Simgui Technology Co.,Ltd. ,  a spin-off company from SIMIT,  and French SOI wafer manufacturer Soitec are working closely to explore the market opportunities now. He also presented some of the latest research findings and the industry dynamics in this field.

Xi Wang, Academician and Director General of the Shanghai Institute of Microsystem and Information Technology (SIMIT) /Chinese Academy of Sciences (CAS) giving the first talk at the 2014 International RF-SOI Workshop.

Xi Wang, Academician and Director General of the Shanghai Institute of Microsystem and Information Technology (SIMIT) /Chinese Academy of Sciences (CAS) giving the first talk at the 2014 International RF-SOI Workshop.

 

Next, Handel Jones, CEO of IBS, gave a detailed analysis of the markets for smart phones and tablet PCs and other mobile consumer applications. These are strong drivers of the huge market opportunity and demand for chips based on RF-SOI technology. (Click here to view his presentation.)

 

(Courtesy: IBS)

(Courtesy: IBS)

This workshop also featured presentations by ST, GlobalFoundries and SMIC, as well as several important RF-SOI platform providers.

Mark Ireland, Vice President of Strategy and Business Development at the IBM Microelectronics Division, noted that that IBM first began offering RF-SOI manufacturing in 2006.  He explained the key role RF-SOI plays in redefining chips for mobile applications, where integration and performance are key. (Click here to view his presentation.)

Laura Formenti, Infrastructure and RF-SOI Business Unit Director at STMicroelectronics, gave a detailed analysis of RF-SOI. She covered the advantages of RF front-end integration and introduced ST’s H9SOI_FEM technology platform. (Click here to view her presentation.)

Paul Colestock, Sr. Director of Segment Marketing at GlobalFoundries shared specifics and the latest developments in the 130nm RF-SOI technology platform, UltraCMOS 10.

 

The room was full at the Shanghai RF-SOI Workshop 2014

The room was full at the Shanghai RF-SOI Workshop 2014

 

Herb Huang, Sr. Director Development, Technology R&D at SMIC, China’s largest foundry, addressed SOI in RF switches. He shared details on SOI NFETs for enhanced performance, and on CMOS MEMS RF filters. SOI CMOS will facilitate integration of switches (SW), power amplifiers (PA), envelope tracking (ET) and antenna tuning (AT) in SoCs. The foundry provides not only device-level processes but also support for high-performance system-in-package (SiP) solutions at the wafer level.

Professor Jean-Pierre Raskin of the Catholic University of Leuven (Belgium) and Bernard Aspar, General Manager of Soitec’s Communication & Power Business Unit presented detailed technical analyses of SOI substrates.  They covered the influence of substrates on RF signal integrity and the key role they play in improving RF performance thanks to the enhanced Signal Integrity (eSI™) High Resistivity SOI substrate.  (Click here to view the UCL presentation, and here to view the Soitec presentation.)

James Young, VP of Engineering, FES Si Platform Engineering at Skyworks focused on RF and wireless semiconductor design. In particular he addressed mobile phone design, including PA, ET and APT (Average Power Tracking). He gave performance comparisons and analysis for SOI/CMOS vs. GaAs devices.  (Click here to view the presentation.)

Dr. Yumin Lu, VP of the Shanghai Industrial μTechnology Research Institute Co.,Ltd. elaborated on how 4G wireless communications brings new challenges for RF front-end modules and components. RF-SOI has become a mainstream technology for antenna/switches. There is also significant potential for RF-SOI to make further inroads in applications such as tunable components (including antennas, PAs, filters/duplexers, etc.). (Click here to view the presentation.)

RFSOI_Shanghai14_RoundtableDiscussion

Roundtable Discussion at the 2014 International RF-SOI Workshop in Shanghai

The final panel discussion session on the “China RF market” started a lively debate. Topics included the specificities and drivers of the China RF market, Chinese foundry capacity, the RF-SOI supply chain, RF front-end module (FEM) system packaging and system integration trends, and LTE and WiFi common platforms on RF-SOI substrates.  Audience members had questions about device design. The need for the industry to establish a broader ecosystem was a common theme.

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Editor’s note: This article was first posted in Chinese at Shanghai Institute of Micro-Technology Industry Views. You can see the original hereMany thanks to Xi Wang, Academician and Director General of the Shanghai Institute of Microsystem and Information Technology (SIMIT) /Chinese Academy of Sciences (CAS) for his permission to translate/adapt and reprint it here in ASN.

ByGianni PRATA

Shanghai RF-SOI and FD-SOI presentations being posted on SOI Consortium website

All the presentations made at the SOI Consortium‘s Shanghai workshops on RF-SOI and FD-SOI are now being posted.

The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those.

The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and GlobalFoundries – click here for those.

As of this writing, most of the presentations are available – the rest will follow very shortly so check back soon if the one you want is not there yet.

 

ByAdministrator

A New Top-Tier FD-SOI Foundry – But Which One?

By Adele Hars, ASN Editor-in-Chief

Speculation is mounting following ST’s April 28th announcement that they’d signed on a new first-tier foundry for 28nm FD-SOI manufacturing.  As of this posting, they haven’t yet said which one it is.

The social media-sphere is abuzz about the mystery foundry – with posters in LinkedIn groups, Twitter, SemiWiki and various industry news sites and forums postulating that it might be Samsung, or UMC, or SMIC or…?

Then David Manners of Electronics Weekly said he’d heard it was SMIC, which launched another round of furious speculation.

But for now, ST’s position is to keep shtum, saying only that we’ll just have to wait to find out which foundry it is until they’re ready to make an official announcement…which caused another round of speculation as to when that would be. Some say they’ll announce at their Investors and Analysts Day on May 15th. Certainly the investment community will press for details, right?

The “we’ve-signed-but-we’re-not-saying-with-whom” news came out of a press release issued with the STMicroelectronics’ 2014 First Quarter Financial Results (read press release here). Jean-Marc Chery, Executive Vice President and General Manager, Embedded Processing Solutions, was quoted as saying, “We have just signed a strategic agreement with a top-tier foundry for 28nm FD-SOI technology. This agreement expands the ecosystem, assures the industry of high-volume production of ST’s FD-SOI based IC solutions for faster, cooler, and simpler devices and strengthens the business and financial prospects of the Embedded Processing Solutions Segment.”

During the follow-up call with analysts (transcript on Seeking Alpha here), CEO Carlo Bozotti added that, “ST’s unique FD-SOI technology is well on its way to become a significant revenue generator for 2015 and beyond….” And the Board of Directors announced that Jean-Marc Chery, who’s been quite a champion of FD-SOI, has been named as ST’s new COO.

Further fanning the flames, in a follow-up piece, Manners quoted KT’s CEO as saying FinFET yields “…are proving to be the most challenging that the industry have ever faced, and even the smallest variation and process margin can cause significant yield losses for these devices.”  Now we all know that FinFETs are part of the equation – the question is when and for which apps. But Manners suggested that the current FinFET yield issues are prompting companies to take another look at “simpler, cheaper FD-SOI”.

So we wait with bated breath. Stay tuned – as soon as ST makes an official announcement, you’ll read about it here at ASN.